Teknologian Tutkimuskeskus Vtt Oy

Panu Pekko

Antti Jaakkola

Tuomas Pensala

Mika Prunnila

Aarne Oja

James Dekker

The present disclosure describes micromechanical resonator, a resonator element for the resonator, and a method for trimming the resonator. The resonator comprises a resonator element having a length, a width, and a thickness, where the length and the width define a plane of the resonator element. The resonator element comprises at least two regions () in the plane of the resonator element, wherein the at least two regions have different thicknesses.

Micromechanical resonator and method for trimming micromechanical resonator

The present disclosure describes a micromechanical resonator comprising a resonator element () having a length (l) and a width (w) that is perpendicular to the length. The resonator element has a length-to-width aspect ratio in a range of 1.8 to 2.2. The resonator element is suspended to a support structure with two or more anchors (). Each of the two or more anchors is attached to a first location or a second location. The first location is at a shorter side () of the resonator element. The first location divides the width (w) of the resonator element into a larger portion (w) and a smaller portion (w) such that a ratio between said smaller portion (w) and the whole width (w) is in a range of 0.10 to 0.28. The second location is at a longer side (). The second location divides the length (l) of the resonator element into a larger portion (l) and a smaller portion (l) such that a ratio between said smaller portion (l) and the whole length (l) is in a range of 0.36 to 0.48.

Micromechanical resonator

The invention provides a microelectromechanical resonator device comprising a support structure and a resonator manufactured on a (100) or (110) semiconductor wafer, wherein the resonator is suspended to the support structure and comprises at least one beam being doped to a doping concentration of 1.1*10cmor more with an n-type doping agent and is being capable of resonating in a length-extensional, flexural resonance or torsional mode upon suitable actuation. In particular, the doping concentration and angle of the beam are chosen so as to simultaneously produce zero or close to zero second order TCF, and even more preferably zero or close to zero first and second order TCFs, for the resonator in said resonance mode, thus providing a temperature stable resonator.

Temperature compensated beam resonator

The invention concerns microelectromechanical resonators. In particular, the invention provides a resonator comprising a support structure, a doped semiconductor resonator suspended to the support structure by at least one anchor, and actuator for exciting resonance into the resonator. According to the invention, the resonator comprises a base portion and at least one protrusion extending outward from the base portion and is excitable by said actuator into a compound resonance mode having temperature coefficient of frequency (TCF) characteristics, which are contributed by both the base portion and the at least one protrusion. The invention enables simple resonators, which are very well temperature compensated over a wide temperature range.

Temperature compensated compound resonator

The invention relates to a microelectromechanical resonator device comprising a support structure and a semiconductor resonator plate doped to a doping concentration with an n-type doping agent and being capable of resonating in a width-extensional resonance mode. In addition, there is at least one anchor suspending the resonator plate to the support structure and an actuator for exciting the width-extensional resonance mode into the resonator plate. According to the invention, the resonator plate is doped to a doping concentration of 1.2*10cmor more and has a shape which, in combination with said doping concentration and in said width-extensional resonance mode, provides the second order temperature coefficient of frequency (TCF) to be 12 ppb/Cor less at least at one temperature. Several practical implementations are presented.

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Espoo, Finland

Panu Pekko