Taiwan Semiconductor Manufacturing Comp. Ltd.

Vanguard International Semiconductor Corporation

Pang-Yen Tsai

Yasutoshi Okuno

Tze-Liang Lee

Sung-Li Wang

Pei-Wei Lee

Ming-Hua Yu

Ding-Kang Shih

Chii-Horng Li

Yen-Ru Lee

Lilly Su

Tsungyu Hung

Keng-Chu Lin

Mrunal Abhijith Khaderbad

Winnie Victoria Wei-Ning Chen

Tsung-Yu Hung

Shuen-Shin Liang

Chih-Hao Wang

Shih-Chang Chen

Tung-Ying Lee

Meng-Hsuan Hsiao

Hung-Ta Lin

Meng-Ku Chen

Ching-Wei Tsai

Huicheng Chang

Ta-Wei Wang

Shang-Chih Chen

Cheng-Long Chen

Teng-Chun Tsai

Pinyen Lin

Yu-Hung Cheng

Yi-Hung Lin

Shen-Nan Lee

Chia-Hung Chu

Hsu-Kai Chang

Chih-Chien Chang

Chin-Hsiang Lin

Chien-Hao Chen

Wen-Chin Lee

Chun-Chieh Lin

Li-Ting Wang

Chun-Feng Nieh

Liang-Gi Yao

Jeff J Xu

Yee-Chia Yeo

Syun-Ming Jang Jang

Yen-Ming Chen

Chih-Hsin Ko

Chung-Liang Cheng

Chih-Wei Chang

Cheng-Hsien Wu

Li-Te S Lin

Chun-Hsiung Lin

Chii-Ming M Wu

Mao-Lin Huang

Yi-Jing Lee

Chung-Cheng Wu

Huang-Lin Chao

Yen-Ping Wang

Jr-Hung Li

Chien-Chang Su

Chien-Hsun Wang

Shih-Hsun Chang

Chien-Wei Lee

Hui-Cheng Chang

Shun Wu Lin

Yan-Ting Lin

Bing-Hung Chen

Tien-Chen Hu

Gwan-Sin Chang

Mong Song Liang

Rong-Wu Chien

Chih-Yun Chin

Keh-Chiang Ku

Jhi-Cherng Lu

Sen-Shan Yang

Che-Yu Yeh

Yun-Hsiu Chen

Che-Ting Chu

Chie-Chien Chang

Wei-Cheng Ku

Lian-Fa Hung

Ching-Chang Chang

Kuang-Chao Chen

Winne Victoria Wei-Ning Chen

Ying-Hsuan Wang

A strain-relaxed silicon/silicon germanium (Si/SiGe) bi-layer can be used as a foundation for constructing strained channel transistors in the form of nanosheet gate all-around field effect transistors (GAAFETs). The bi-layer can be formed using a modified silicon-on-insulator process. A superlattice can then be epitaxially grown on the bi-layer to provide either compressively strained SiGe channels for a p-type metal oxide semiconductor (PMOS) device, or tensile-strained silicon channels for an n-type metal oxide semiconductor (NMOS) device. Composition and strain of the bi-layer can influence performance of the strained channel devices.

Strained nanosheets on silicon-on-insulator substrate

A semiconductor device and a method of forming the same are provided. A method includes forming a gate over a semiconductor structure. An epitaxial source/drain region is formed adjacent the gate. A dielectric layer is formed over the epitaxial source/drain region. An opening extending through the dielectric layer and exposing the epitaxial source/drain region is formed. A conductive material is non-conformally deposited in the opening. The conductive material fills the opening in a bottom-up manner.

Contact plugs for semiconductor device and method of forming same

The present disclosure provides channel structures of a semiconductor device and fabricating methods thereof. The method can include forming a superlattice structure with first nanostructured layers and second nanostructured layers on a fin structure. The method can also include removing the second nanostructured layers to form multiple gate openings; forming a germanium epitaxial growth layer on the first nanostructured layers at a first temperature and a first pressure; and increasing the first temperature to a second temperature and increasing the first pressure to a second pressure over a first predetermined period of time. The method can further include annealing the germanium epitaxial growth layer at the second temperature and the second pressure in the chamber over a second predetermined period of time to form a cladding layer surrounding the first nanostructured layers.

Channel structures for semiconductor devices

A method includes providing a p-type S/D epitaxial feature and an n-type source/drain (S/D) epitaxial feature, forming a semiconductor material layer over the n-type S/D epitaxial feature and the p-type S/D epitaxial feature, processing the semiconductor material layer with a germanium-containing gas, where the processing of the semiconductor material layer forms a germanium-containing layer over the semiconductor material layer, etching the germanium-containing layer, where the etching of the germanium-containing layer removes the germanium-containing layer formed over the n-type S/D epitaxial feature and the semiconductor material layer formed over the p-type S/D epitaxial feature, and forming a first S/D contact over the semiconductor material layer remaining over the n-type S/D epitaxial feature and a second S/D contact over the p-type S/D epitaxial feature. The semiconductor material layer may have a composition similar to that of the n-type S/D epitaxial feature.

Epitaxial layers in source/drain contacts and methods of forming the same

A semiconductor device structure is provided. The semiconductor device structure includes multiple semiconductor nanostructures, and the semiconductor nanostructures include a first semiconductor material. The semiconductor device structure also includes multiple epitaxial structures extending from edges of the semiconductor nanostructures. The epitaxial structures include a second semiconductor material that is different than the first semiconductor material. The semiconductor device structure further includes a gate stack wrapped around the semiconductor nanostructures.

Gate all around (GAA) transistor structures having a plurality of semiconductor nanostructures

A first dielectric layer is selectively formed such that the first dielectric layer is formed over a source/drain region of a first type of transistor but not over a source/drain region of a second type of transistor. The first type of transistor and the second type of transistor have different types of conductivity. A first silicide layer is selectively formed such that the first silicide layer is formed over the source/drain region of the second type of transistor but not over the source/drain region of the first type of transistor. The first dielectric layer is removed. A second silicide layer is formed over the source/drain region of the first type of transistor.

Selective dual silicide formation using a maskless fabrication process flow

Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer comprising different semiconductor materials, and the fin includes a channel region and a source/drain region; forming a dummy gate structure over the substrate and the fin; etching a portion of the fin in the source/drain region; selectively removing an edge portion of the second semiconductor layer in the channel region of the fin such that the second semiconductor layer is recessed, and an edge portion of the first semiconductor layer is suspended; performing a reflow process to the first semiconductor layer to form an inner spacer, wherein the inner spacer forms sidewall surfaces of the source/drain region of the fin; and epitaxially growing a sour/drain feature in the source/drain region.

Self-aligned inner spacer on gate-all-around structure and methods of forming the same

A nano-FET and a method of forming is provided. In some embodiments, a nano-FET includes an epitaxial source/drain region contacting ends of a first nanostructure and a second nanostructure. The epitaxial source/drain region may include a first semiconductor material layer of a first semiconductor material, such that the first semiconductor material layer includes a first segment contacting the first nanostructure and a second segment contacting the second nanostructure, wherein the first segment is separated from the second segment. A second semiconductor material layer is formed over the first segment and the second segment. The second semiconductor material layer may include a second semiconductor material having a higher concentration of dopants of a first conductivity type than the first semiconductor material layer. The second semiconductor material layer may have a lower concentration percentage of silicon than the first semiconductor material layer.

Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reduction

The present disclosure describes a method to form a semiconductor device with backside contact structures. The method includes forming a semiconductor device on a first side of a substrate. The semiconductor device includes a source/drain (S/D) region. The method further includes etching a portion of the S/D region on a second side of the substrate to form an opening and forming an epitaxial contact structure on the S/D region in the opening. The second side is opposite to the first side. The epitaxial contact structure includes a first portion in contact with the S/D region in the opening and a second portion on the first portion. A width of the second portion is larger than the first portion.

Backside contact structures with stacked metal silicide layers for source/drain region of fin field transistors

A semiconductor device according to the present disclosure includes a substrate including a plurality of atomic steps that propagate along a first direction, and a transistor disposed on the substrate. The transistor includes a channel member extending a second direction perpendicular to the first direction, and a gate structure wrapping around the channel member.

Channel mobility improvement

A semiconductor device structure according to the present disclosure includes a source feature and a drain feature, at least one channel structure extending between the source feature and the drain feature, a gate structure wrapped around each of the at least one channel structure, a semiconductor layer over the gate structure, a dielectric layer over the semiconductor layer, a doped semiconductor feature extending through the semiconductor layer and the dielectric layer to be in contact with the source feature, a metal contact plug over the doped semiconductor feature, and a buried power rail disposed over the metal contact plug.

Epitaxial backside contact

A method for reducing stress induced defects in heterogeneous epitaxial interfaces of a semiconductor device is disclosed. The method includes forming a fin structure with a fin base, a superlattice structure on the fin base, forming a polysilicon gate structure on the fin structure, forming a source/drain (S/D) opening within a portion of the fin structure uncovered by the polysilicon gate structure, modifying the first surfaces of the first layers to curve a profile of the first surfaces, depositing first, second, and third passivation layers on the first, second, and third surfaces, respectively, forming an epitaxial S/D region within the S/D opening, and replacing the polysilicon gate structure with a metal gate structure. The superlattice structure includes first and second layers with first and second lattice constants, respectively, and the first and second lattice constants are different from each other.

Interface profile control in epitaxial structures for semiconductor devices

Examples of an integrated circuit with an interface between a source/drain feature and a contact and examples of a method for forming the integrated circuit are provided herein. In some examples, a substrate is received having a source/drain feature disposed on the substrate. The source/drain feature includes a first semiconductor element and a second semiconductor element. The first semiconductor element of the source/drain feature is oxidized to produce an oxide of the first semiconductor element on the source/drain feature and a region of the source/drain feature with a greater concentration of the second semiconductor element than a remainder of the source/drain feature. The oxide of the first semiconductor element is removed, and a contact is formed that is electrically coupled to the source/drain feature. In some such embodiments, the first semiconductor element includes silicon and the second semiconductor element includes germanium.

Source/drain feature to contact interfaces

A device includes a semiconductive fin, an isolation structure, a gate structure, dielectric spacers, and source/drain epitaxial structures. The isolation structure surrounds a bottom portion of the semiconductive fin. The gate structure is over the semiconductive fin. The dielectric spacers are on opposite sides of the semiconductive fin and over the isolation structure. The dielectric spacers include nitride. The source/drain epitaxial structures are on opposite sides of the gate structure and over the dielectric spacers. The source/drain epitaxial structures have hexagon shapes.

Semiconductor device having spacer residue

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Jhu-Bei, Taiwan

Pang-Yen Tsai