National Yang Ming Chiao Tung University

Industrial Technology Research Institute

National Science Council

Pang Lin

Tseung-Yuen Tseng

Chia-Ying Lee

Seu-Yi Li

Cheng-Chung Lee

Tarng-Shiang Hu

Ming-Chun Hsiao

San-Yuan Chen

Wei-Ling Lin

Chung-Jung Hung

Tseung-Yuan Tseng

Liang-Xiang Chen

Kai-Nung Su

Ming Shiahn Tsai

Huei-Mei Tsai

A high energy density asymmetric pseudocapacitor includes a cathode plate, an anode plate, and a separator. The cathode plate includes a first conductive substrate and a porous cathode film formed on the first conductive substrate. The porous cathode film includes a carbon nano-tube network and a plurality of composite flakes. Each of the composite flakes contains graphene, a transition metal compound and carbon nano-tubes. The anode plate includes a second conductive substrate and an anode film formed on the second conductive substrate. The anode film contains graphene and carbon nano-tubes.

High energy density asymmetric pseudocapacitor and method of making the same

This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.

Gate controlled field emission triode and process for fabricating the same

A composition for forming a dielectric layer includes a liquid organometallic compound serving as a precursor with high dielectric constant, a photo-sensitive polymer or a non-photo-sensitive polymer and a solvent, wherein the liquid organometallic compound includes metal alkoxide, and the metal of the metal alkoxide includes Al Ti, Zr, Ta, Si, Ba, Ge and Hf. The dielectric layer formed by the composition includes the photo-sensitive polymer or the non-photo-sensitive polymer and an amorphous metal oxide formed therein.

Fabricating dielectric layer

Disclosed herein is an SOG (Spin on Glass) material for spacer anodic bonding, which includes: 0.1&tilde;3 wt % of tetraethyl orthosilicate (TEOS); 0.1&tilde;5 wt % of methyl triethyl orthosilicate (MTEOS); 20&tilde;30 wt % of ethanol; 0.1&tilde;2 wt % of acetic acid solution containing alkali metal ions; and 0.1&tilde;10 wt % of water. The solid content of alkali metal elements in the acetic acid solution containing alkali metal ions is 5%&tilde;60%, and the pH value of the SOG material is 4&tilde;6.

SOG materials for spacer anodic bonding and method of preparing the same

A novel SBTN (Sr Bi Ta Nb O ) thin film which exhibits satisfactory ferroelectric properties is disclosed, wherein a lies between 0.5 and 1, b lies between 2 and 2.7, c lies between 1 and 1.4, d lies between 0.6 and 1.1, and x lies between 8 and 10. The composition of Sr Bi Ta Nb O wherein x lies between 9 and 10 is preferred. The Sr Bi Ta Nb O thin film is formed by two-target off-axis RF magnetron sputtering at a temperature down to about 600&deg; C. One target is formed of Sr Bi Ta Nb O , and the other target is formed of Bi O .

SBTN ferroelectric thin film and method for producing same

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Hsinchu, Taiwan

Pang Lin