Taiwan Semiconductor Manufacturing Comp. Ltd.

Pang-Chi Wu

Mei-Yun Wang

Bao-Ru Young

Tung-Heng Hsieh

Kuo-Yi Chao

Shih-Chieh Wu

Chao-Hsun Wang

Hsien-Huang Liao

Fu-Kai Yang

Jia-Heng Wang

Wang-Jung Hsueh

Sheng-Hsiung Wang

Yuan-Tien Tu

Yi-Chun Chang

Hao Kuang

In an embodiment, a method includes: forming a first fin extending from a substrate; forming a second fin extending from the substrate, the second fin being spaced apart from the first fin by a first distance; forming a metal gate stack over the first fin and the second fin; depositing a first inter-layer dielectric over the metal gate stack; and forming a gate contact extending through the first inter-layer dielectric to physically contact the metal gate stack, the gate contact being laterally disposed between the first fin and the second fin, the gate contact being spaced apart from the first fin by a second distance, where the second distance is less than a second predetermined threshold when the first distance is greater than or equal to a first predetermined threshold.

Semiconductor devices

Semiconductor structures and methods for manufacturing the same are provided. The method includes a gate structure formed over a substrate, and a source/drain (S/D) structure formed adjacent to the gate structure. The semiconductor structure includes a dielectric layer formed over the S/D structure, and an S/D contact structure formed over the S/D structure. The S/D contact structure is through the dielectric layer. The semiconductor structure includes a gate contact structure formed through the dielectric layer and landing on the gate structure, and the gate contact structure is in direct contact with the gate structure. The semiconductor structure includes a bridging contact structure covering the gate contact structure and the S/D contact structure, and the bottommost surface of the bridging contact structure is in direct contact with the topmost surface of the S/D contact structure.

Semiconductor structure with conductive_structure

Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes nanostructures spaced apart from each other in a first direction and a gate structure formed over and around the nanostructures. The semiconductor structure further includes a gate spacer covering a sidewall of the gate structure and a source/drain structure attached to the nanostructures in a second direction. The semiconductor structure further includes a contact spaced apart from the gate structure by the gate spacer in the second direction and a first conductive structure landing over the gate structure. The semiconductor structure further includes a second conductive structure formed over the gate spacer. In addition, a portion of the second conductive structure is sandwiched between the first conductive structure and the contact.

Semiconductor transistor structure with nanostructures and conductive structure and method for manufacturing the same

A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a metal gate stack over a substrate and an epitaxial structure over the substrate. The semiconductor device structure also includes a conductive contact electrically connected to the epitaxial structure. A topmost surface of the metal gate stack is vertically disposed between a topmost surface of the conductive contact and a bottommost surface of the conductive contact. The semiconductor device structure further includes a first conductive via electrically connected to the metal gate stack. The topmost surface of the conductive contact is vertically disposed between a topmost surface of the first conductive via and a bottommost surface of the first conductive via. In addition, the semiconductor device structure includes a second conductive via electrically connected to the conductive contact.

Structure and formation method of semiconductor device with contact structures

A device includes a semiconductor substrate, an active region over the semiconductor substrate extending lengthwise in a first direction, a gate structure over the active region extending lengthwise in a second direction perpendicular to the first direction, a source feature and a drain feature on the active region and interposed by the gate structure, a source contact on the source feature, a drain contact on the drain feature, and a via rail over the substrate spaced from the active region. The via rail includes a main portion extending lengthwise in the first direction having a sidewall surface facing opposite the end surface of the drain contact, and a jog via extending from the main portion along the second direction and having a sidewall surface facing the second direction, each of the main portion and the jog via contacting the source contact.

Via rail structure

Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and nanostructures suspended over the substrate. The semiconductor structure also includes a gate structure wrapping around the nanostructures and a source/drain structure attached to the nanostructures. The semiconductor structure also includes a contact vertically over the source/drain structure and a first conductive structure vertically over the gate structure. The semiconductor structure also includes a second conductive structure in contact with a top surface of the first conductive structure and a top surface of the contact and including an extending portion laterally sandwiched between the first conductive structure and the contact.

Semiconductor structure with conductive structure

Semiconductor device and method

Semiconductor structures and methods for manufacturing the same are provided. The method for manufacturing the semiconductor structure includes forming a gate structure over a substrate and forming a mask layer covering the gate structure. The method also includes forming a source/drain structure adjacent to the gate structure over the substrate and forming a contact over the source/drain structure. The method also includes forming a dielectric layer over the contact and the mask layer and forming a first trench through the dielectric layer and the mask layer over the gate structure. The method also includes forming a first conductive structure in the first trench and removing an upper portion of the first conductive structure. The method also includes forming a second conductive structure through the dielectric layer and covering the contact and the first conductive structure.

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Hsinchu, Taiwan

Pang-Chi Wu