Samsung Electronics Co., Ltd.

Pandi Kanniah

Suman Prakash Balakrishnan

Sharath Kumar Kodase

Anantha Sharma

Sandeep Kumar Ananthapalli

Ayyanar Ponnusamy Gangheyamoorthy

Srinivas Sridhara

Ashok Navneethan Arumugam

A method for performing data read operation on a storage device, includes: based on receiving a command from a host device, generating a read request using a first layer associated with the storage device, wherein the read request includes at least one memory physical parameter, a default read offset, and at least one retry read offset; communicating, via a memory interface layer, the read request to a second layer associated with the storage device; performing a default read operation in the second layer based on the at least one memory physical parameter and the default read offset; detecting a first error status of the read request during the default read operation in the second layer; and based on the first error status of the read request indicating the first uncorrectable error, performing a retry read operation in the second layer using a retry read offset.

Method for performing data read operation and a storage device thereof

Example embodiments of the present disclosure disclose method and system for performing read/write operations in NAND memory. A memory controller of the NAND memory receives write request from host controller to write data present in set of support cell blocks of NAND memory into a 'n'-level cell block of NAND memory. The write request includes information about mapping between set of support cell blocks and ‘n’-level cell block. The mapping between set of support cell blocks and ‘n’-level cell block is used to update L2P table (). Further, memory controller performs copyback operation on set of support cell blocks for writing data to ‘n’-level cell block based on L2P table using NAND latches. On receiving read request, host controller retrieves data from at least one support cell block associated with ‘n’-level cell block based on mapping on determining ‘n’-level cell block is listed in active block list.

Method and system for performing read and write operations in cells of a NAND memory

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Bengaluru, India

Pandi Kanniah