Asml Netherlands B.v.

Panagiotis Pieter Bintevinos

Maurits Van Der Schaar

Kaustuve Bhattacharyya

Scott Anderson Middlebrooks

Jen-Shiang Wang

Peter Hanzen Wardenier

Andreas Fuchs

Leonardus Henricus Marie Verstappen

Guangqing Chen

Lotte Marloes Willems

Pieter Jacob Mathias Hendrik Knelissen

Martin Ebert

Stephen Peter Morgan

Stephen Morgan

A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.

Method and apparatus for inspection and metrology

A method for determining overlay error includes measuring asymmetry of radiation reflected from each of a plurality of targets on a substrate. The plurality of targets include a predetermined overlay offset. The method also includes comparing the measured asymmetry of the radiation reflected from each of the plurality of targets to the corresponding predetermined overlay offset of the respective target. Additionally, the method includes determining the overlay error of a point on the substrate as a function of measured asymmetry reflected from the point. The function is determined by fitting a polynomial or a Fourier series to a comparison of the measured asymmetry of the radiation reflected from each of the plurality of targets to the corresponding predetermined overlay offset of the respective target. The function limits an effect of linearity error.

Inspection methods, inspection apparatuses, and lithographic apparatuses

A method and associated apparatus determine an overlay error on a substrate. A beam is projected onto three or more targets. Each target includes first and second overlapping patterns with predetermined overlay offsets on the substrate. The asymmetry of the radiation reflected from each target on the substrate is measured. The overlay error not resultant from the predetermined overlay offsets is determined. The function that enables calculation of overlay from asymmetry for other points on the wafer is determined by limiting the effect of linearity error when determining the overlay error from the function.

Inspection method and apparatus, and corresponding lithographic apparatus

Growing community of inventors

Best, Netherlands

Panagiotis Pieter Bintevinos