Asm IP Holding B.v.

Panagiota Arnou

Dieter Pierreux

Bert Jongbloed

Werner Knaepen

Ren-Jie Chang

Gido Van Der Star

Pia Homm Jara

Qi Xie

Giuseppe Alessio Verni

Methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber. The disclosure further relates to structures and devices comprising the vanadium nitride-containing layer.

Method of forming a vanadium nitride-containing layer

Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.

Method of forming vanadium nitride-containing layer

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Leuven, Belgium

Panagiota Arnou