Cummins Inc.

Yangtze Memory Technologies Co., Ltd.

Pan Wang

Jingjing Geng

Zhipeng Wu

Xiangning Wang

Lu Zhang

Kai Han

Meng Xiao

Hang Yin

Hui Zhang

Roger S Zhang

Joey Wang

Aspects of the disclosure provide a method for fabricating a semiconductor device having an first stack of alternating insulating layers and sacrificial word line layers arranged over a substrate, the first stack including a core region and a staircase region. The method can include forming a first dielectric trench in the core region of the first stack, forming a second dielectric trench that is adjacent to and connected with the first dielectric trench in the staircase region of the first stack, and forming dummy channel structures extending through the first stack where the dummy channel structures are spaced apart from the second dielectric trench.

Method of forming top select gate trenches

A method of controlling speed of an internal combustion engine is disclosed. The method includes receiving a load parameter input. The method also includes determining a requested speed demand and detecting a change in load based on the load parameter input. The method also includes determining a modified speed demand based on the detected change in load, and modifying the requested speed demand to the modified speed demand.

Systems and methods for adaptive acceleration based speed control

Growing community of inventors

Wuhan, China

Pan Wang