Hwatsing Technology Co., Ltd.

Tsinghua University

Pan Shen

Xinchun Lu

Yongyong He

Jianbin Luo

Tongqing Wang

Dewen Zhao

Zhenjie Xu

Lianqing Zhang

Zhaohui Pei

Hegeng Mei

A method for measuring a film thickness of a film on an edge of a wafer, comprising: off-line detecting a film at a detection point on the wafer by a four-point probe method to obtain a real film thickness of the film at the detection point, and detecting a distance from the detection point to a center of the wafer using a length measurement, in which the detection point is located between the center of the wafer and a edge point of the wafer; detecting the film at the detection point using an eddy current transducer to obtain a detected film thickness of the film at the detection point; determining a film thickness measuring correction factor according to the real film thickness, the detected film thickness at the detection point and the distance from the detection point to the center of the wafer; and measuring the film on an edge of the wafer using the eddy current transducer to obtain a measured film thickness of the film on the edge of the wafer and correcting the measured film thickness of the film on an edge of the wafer according to the film thickness measuring correction factor to obtain a real film thickness of the film on the edge of the wafer.

Method for measuring thickness of film on wafer edge

A chemical-mechanical polishing machine includes a work table, polishing platen mounted onto the work table, pad conditioner and slurry-delivery device mounted on the work table and disposed near the polishing platen, and polishing-head support mounted on the work table and including a base plate and supporting side plates. The base plate is formed with a groove in a 'thickness' direction. A loading and unloading table is mounted on the work table, disposed below the base plate, and opposed to the polishing platen. A polishing head is rotatably disposed on the polishing-head support, movable in the longitudinal direction, and passes through the groove to extend downwardly. A robotic manipulator is disposed near the work table for placing a wafer on the loading and unloading table and taking the wafer away from it. A chemical-mechanical polishing apparatus includes an array of a plurality of the machine.

Chemical mechanical polishing machine and chemical mechanical polishing apparatus comprising the same

A measuring device for measuring a film thickness of a silicon wafer () comprises: position and velocity sensors () linearly arranged along a longitudinal direction into first and second position and velocity sensor arrays spaced apart from each other in a lateral direction, in which the position and velocity sensors () in the first position and velocity sensor array are in one-to-one correspondence with the position and velocity sensors () in the second position and velocity sensor array in the lateral direction; an eddy current sensor () disposed in a symmetrical plane between the first position and velocity sensor array and the second position and velocity sensor array and perpendicular to the lateral direction; and a controller connected to the position and velocity sensors () and the eddy current sensor () respectively for controlling measurement of the thickness of the film according to detection signals from the position and velocity sensors () and the eddy current sensor ().

Measuring device for measuring film thickness of silicon wafer

Growing community of inventors

Beijing, China

Pan Shen