Aledia

Pamela Rueda Fonseca

Wei Sin Tan

Philippe Gilet

Zine Bouhamri

Frédéric Mercier

Eric Pourquier

Olivier Jeannin

Pierre Tchoulfian

A method of forming a dielectric collar for semiconductor wires includes providing a layers stack and a semiconductor wires (SW) layer on top of the stack, forming a base layer at a lower part of the SW and a capping layer at an upper part of the SW, the base layer parallel to the basal plane and including a dielectric material surrounding the lower part of the SW, and the capping layer along a contour of the SW and including a dielectric material surrounding the upper part of the SW, the base and capping layers having thicknesses e1 and e2 with e1>2.e2, performing anisotropic etching along the direction normal to the basal plane to remove the dielectric material at a top part of the SW and leaving the dielectric material at least in the lower part of the SW.

Method of forming a dielectric collar for semiconductor wires

An optoelectronic device including: a first circuit including a substrate having first and second opposite faces, the first circuit having display pixels, each display pixel having, on the side of the first face, a first light-emitting diode having a first active region adapted to emit a first radiation and, extending from the second face, a second light-emitting diode having a second active region adapted to emit a second radiation, the surface area, viewed from a direction orthogonal to the first face, of the first active region being at least twice as big as the surface area, viewed from the direction, of the second active region; and a second circuit bonded to the first circuit on the side of the first light-emitting diode and electrically linked to the first and second light-emitting diodes.

Optoelectronic device with light-emitting diodes

optoelectronic circuit intended to receive a variable voltage containing an alternation of rising and falling phases. The optoelectronic circuit includes light-emitting diodes and a switching device capable of allowing or of interrupting the flowing of a current through each light-emitting diode. Each light-emitting diode is covered with a photoluminescent layer. The photoluminescent layer covering at least one of the light-emitting diodes includes at least one first luminophore having a first decay constant and at least one second luminophore having a second decay constant different from the first decay constant.

Optoelectronic circuit comprising light emitting diodes

An optoelectronic circuit including a substrate and display pixels, each display pixel having a first light-emitting diode adapted to emit a first radiation and a second light-emitting diode adapted to emit a second radiation, the first light-emitting diode having a planar structure and resting on the substrate and the second light-emitting diode having a tridimensional structure and resting on the first light-emitting diode or crossing at least partially through the first light-emitting diode.

Growing community of inventors

Grenoble, France

Pamela Rueda Fonseca