Globalfoundries U.S. Inc.

Pallabi Das

Nicholas A Polomoff

Koushik Ramachandran

Thomas F Houghton

Jae Kyu Cho

Mohamed Rabie

Yunyao Jiang

Ian Melville

Structures for a cavity included in a photonics chip and methods of fabricating a structure for a cavity included in a photonics chip. The structure includes a substrate, a back-end-of-line stack having interlayer dielectric layers on the substrate, and a cavity penetrating through the back-end-of-line stack and into the substrate. The cavity includes first sidewalls and second sidewalls, and the second sidewalls have an alternating arrangement with the first sidewalls to define non-right-angle corners.

Photonics chips including cavities with non-right-angle internal corners

A photonic integrated circuit (PIC) structure includes an active region in at least an active layer over a substrate, the active region including a plurality of transistors therein. A plurality of dielectric interconnect layers are over the active region, and an opening is defined through the plurality of dielectric interconnect layers. The opening extends to at least the active layer. A barrier is within the plurality of dielectric interconnect layers and surrounding the opening. An optical element is positioned in the opening. The barrier prevents stress damage, such as cracks and/or delaminations, from propagating from or to the opening, and maintains the hermetic seal of the PIC structure.

Pic structure having barrier surrounding opening for optical element to prevent stress damage

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Pallabi Das