Axcelis Technologies, Inc.

Other

Lam Research Corporation

Palanikumaran Sakthivel

Thomas James Buckley

Aseem Kumar Srivastava

Alan Frederick Becknell

Carlo Waldfried

Thomas William Noble

Richard E Pingree, Jr

David Ferris

Teresa Zimmerman

Maria Huffman

Aseem Srivastava

A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith

A plasma ashing apparatus for removing organic matter from a substrate including a low k dielectric, comprising a first gas source; a plasma generating component in fluid communication with the first gas source; a process chamber in fluid communication with the plasma generating component; an exhaust conduit in fluid communication with the process chamber; wherein the exhaust conduit comprises an inlet for a second gas source and an afterburner assembly coupled to the exhaust conduit, wherein the inlet is disposed intermediate to the process chamber and an afterburner assembly, and wherein the afterburner assembly comprises means for generating a plasma within the exhaust conduit with or without introduction of a gas from the second gas source; and an optical emission spectroscopy device coupled to the exhaust conduit comprising collection optics focused within a plasma discharge region of the afterburner assembly. An endpoint detection process for an oxygen free and nitrogen free plasma process comprises monitoring an optical emission signal of an afterburner excited species in an exhaust conduit of the plasma asher apparatus. The process and apparatus can be used with carbon and/or hydrogen containing low k dielectric materials.

Plasma ashing apparatus and endpoint detection process

Processes for monitoring the levels of oxygen and/or nitrogen in a substantially oxygen and nitrogen-free plasma ashing process generally includes monitoring the plasma using optical emission. An effect produced by the low levels of oxygen and/or nitrogen species present on other species generally abundant in the plasma is monitored and correlated to amounts of oxygen and nitrogen present in the plasma. This so-called 'effect detection' process monitors perturbations in the spectra specifically associated with species other than nitrogen and/or oxygen due to the presence of trace amounts of oxygen and/or nitrogen species and is used to quantitatively determine the amount of oxygen and/or nitrogen at a sensitivity on the order of 1 part per million and potentially 1 part per billion.

Processes for monitoring the levels of oxygen and/or nitrogen species in a substantially oxygen and nitrogen-free plasma ashing process

A method for removing material from a substrate. A plasma is generated in a plasma generating and discharge device including a sapphire plasma tube. At least one fluorine-containing compound is introduced into the plasma. A forming gas is introduced into the plasma. The plasma is directed toward the material to be removed from the substrate.

Fluorine assisted stripping and residue removal in sapphire downstream

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Gaithersburg, MD, United States of America

Palanikumaran Sakthivel