Sun Harmonics, Ltd.

Paifeng Luo

Yuhang Ren

Kai Shum

Bo Gao

Zhi Huang

A method of preparing Cu(In,Ga)SSeCu(In,Ga) (S,Se)(CIGSS) absorber layers uses coated semiconductor nanoparticle and nanowire networks. The nanoparticles and nanowires containing one or more elements from group IB and/or IIIA and/or VIA are prepared from metal salts such as metal chloride and acetate at room temperature without inert gas protection. A uniform and non-aggregation CIGS precursor layer is fabricated with the formation of nanoparticle and nanowire networks utilizing ultrasonic spaying technique. High quality CIGSS film is obtained by cleaning the residue salts and carbon agents at an increased temperature and selenizing the pretreated precursor layer.

Preparation of CIGS absorber layers using coated semiconductor nanoparticle and nanowire networks

A method of forming an compound semiconductor thin film of chalcopyrite structure includes the steps of heating up elemental VI powder in a first chamber to produce VI vapor flux. The VI vapor flow is introduced into a second chamber and an Argon plasma is utilized to crack large molecular VI fractions to generate small VI species. The small molecule VI species are homogeneously deposited on the metallic I-III precursor layers and the precursor film is sealed into a graphite box and transferred to an annealing chamber to create an absorber layer with a large grain size and good crystalline structure.

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Hangzhou, China

Paifeng Luo