Epistar Corporation

United Epitaxy Company, Inc.

Pai-Hsiang Wang

Tzer-Perng Chen

Chih-Sung Chang

Min-Hsun Hsieh

Chih-Chiang Lu

Ta-Cheng Hsu

Jin-Ywan Lin

Kuang-Neng Yang

Wei-En Chien

Yeung-Sy Su

An optoelectronical semiconductor device having a bonding structure comprises a first optoelectronical structure, a second optoelectronical structure, and a transparent bonding structure formed in-between.

Optoelectronical semiconductor device

This invention this invention provides a light-emitting semiconductor device having enhanced brightness, to ensure even current distribution emitted by a front contact of the light emitting diodes so as to improve the light-emitting efficiency of the active layer. This invention adopts the method to manufacture the light-emitting device, comprising the steps of: forming an active layer on a substrate; forming a capping layer on the active layer to enhance current distribution, where a back contact is located on another side of the substrate and a front contact is located above the capping layer. This invention is characterized by: re-designing the front contact, by reducing the width of a metallic pattern constructing fingers or Mesh lines and increasing the number of the fingers or Mesh lines, so as to resolve the current crowding problem.

Light-emitting semiconductor device having enhanced brightness

A light-emitting device comprises a channel structure in the semiconductor layer for connecting an electrode and an ohmic contact layer by means of a substrate transfer process including a wafer-bonding process and a substrate-lifting-off process. The channel structure is formed in the semiconductor stack for electrically connecting the ohmic contact layer and the electrode and driving the current into the light-emitting device. Thereby, a horizontal type or a vertical type of light-emitting device has a good ohmic contact and high light efficiency.

Light-emitting device

A package structure of a light emitting diode includes a substrate structure, a connection layer, and at least one conductive passage. The substrate structure sequentially includes a conduction board, an insulation layer, and a conductive layer. The insulation layer is configured to electrically insulate the conduction board from the conductive layer, and also to insulate a first portion from a second portion of the conduction board. The substrate structure has an opening to expose the conduction board. The connection layer configured to support and electrically couple to a first electrode of a light emitting diode (LED) is disposed in the opening. The connection layer is also configured to electrically couple to the conduction board and to be electrically insulated from at least one portion of the conductive layer, which is coupled to a second electrode of the LED. The conductive passage electrically couples the second portion of the conduction board and the portion of conductive layer, which is insulated from the connection layer.

Package structure for light emitting diode and method thereof

A package structure for a light emitting diode (LED) includes a substrate structure and a reflective layer. The substrate structure sequentially includes a conduction board, an insulation layer, and a conductive layer. The substrate structure has an opening to expose the conduction board. The reflective layer configured to support and electrically couple to a first electrode of the LED is disposed in the opening. The reflective layer is electrically coupled to the conduction board and electrically insulated from at least a portion of the conductivity layer, which is coupled to a second electrode of the LED.

A LED stacking manufacturing method and its structure thereof, mainly uses a stacking method to integrate the epitaxial layer and the high-thermal-conductive substrate by twice bonding process, and the converted epitaxial layer of the temporary bonded substrate replaces the epitaxial wafer growth substrate, and the second bonded layer of the etch stop layer of the epitaxial layer is bonded with the second bonded layer of the high-thermal-conductive substrate to form an alloy layer with permanent connection, and then the temporary bonded substrate is removed, such that the process completes the integration of the epitaxial layer and the high-thermal-conductive substrate and makes the ohmic contact layer to face upward to provide a better reliability and efficiency of optical output of the LED.

Growing community of inventors

Taoyuan, Taiwan

Pai-Hsiang Wang