United Microelectronics Corp.

Pai-Chi Chen

Yung-Feng Cheng

Chian-Ting Huang

A manufacturing method of a semiconductor device includes the following steps. Trenches are formed on a substrate, and the trenches are formed on a first region and a second region defined on the substrate. A barrier layer is formed conformally in the trenches. A first pull-down process is performed to the barrier layer on the second region. The barrier layer on the first region is covered by a first mask during the first pull-down process. A second pull-down process is performed to the barrier layer on the first region. The barrier layer on the second region is covered by a second mask during the second pull-down process. A proportion of an area of the trenches on the first region to an area of the first region is different from a proportion of an area of the trenches on the second region to an area of the second region.

Growing community of inventors

Pingtung County, Taiwan

Pai-Chi Chen