Triquint Technology Holding Co.

Agere Systems Inc.

Padman Parayanthal

George John Przybylek

Abdallah Ougazzaden

Charles William Lentz

Bettina A Nechay

Gustav Edward Derkits, Jr

Robert Louis Hartman

William R Heffner

Waleed A Asous

Ranjani C Muthiah

Patrick J Carroll

The present invention provides an optoelectronic device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optoelectronic device may include creating a multilayered optical substrate and then forming a self aligned dual mask over the multilayered optical substrate. The method may further include etching the multilayered optical substrate through the self aligned dual mask to form a mesa structure.

Optoelectronic device and method of manufacture thereof

A novel contact structure and method for a multilayer gettering contact metallization is provided utilizing a thin layer of a pure metal as the initial layer formed on a semiconductor cap layer. During formation of the contact structure, this thin metal layer reacts with the cap layer and the resulting reacted layer traps mobile impurities and self-interstitials diffusing within the cap layer and in nearby metal layers, preventing further migration into active areas of the semiconductor device. The contact metallization is formed of pure metal layers compatible with each other and with the underlying semiconductor cap layer such that depth of reaction is minimized and controllable by the thickness of the metal layers applied. Thin semiconductor cap layers, such as InGaAs cap layers less than 200 nm thick, may be used in the present invention with extremely thin pure metal layers of thickness 10 nm or less, thus enabling an increased level of integration for semiconductor optoelectronic devices. In addition, because pure metal layers are used in the ohmic contact, fewer impurities are introduced in the formation of the contact than with prior art alloy contacts.

Method of forming a laser circuit having low penetration ohmic contact providing impurity gettering and the resultant laser circuit

An electro-absorption modulated laser is provided having three sections, a laser section, an isolation section, and a modulation section. The laser section produces light along a straight waveguide path. The modulation section also has a straight waveguide path, but is angled with respect to the laser section's path. The isolation section between the other two sections includes a path that is collinear with the respective laser or modulation section at each end, but is gradually curved in the middle.

Process for obtaining ultra-low reflectivity facets for electro-absorption modulated lasers

Optical sources, such as electro-absorption modulator isolated laser modules (EMILMs), for fiber optical communication systems are selected based on noise measures made outside&mdash;and preferably substantially outside&mdash;of the communication system's operational bandwidth. In one embodiment, EMILM devices are selected for communication systems having path lengths of 640 km or more based on both the chirp of the devices and the relative intensity noise (RIN) of the devices at the relaxation oscillation frequency F . Devices having both low chirp and low RIN at F are more likely to meet bit error rate requirements than are devices selected solely for low chirp.

Process for selecting optical sources for communication system

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Clinton, PA, United States of America

Padman Parayanthal