Xemod, Inc.

Cool Dry, Inc.

Sirenza Microdevices, Inc.

Lg Electronics Inc.

Microwave Modules & Devices, Inc.

Spectrian Corporation

Rf Micro Devices, Inc.

Pablo Eugenio D'Anna

David S Wisherd

Joseph Herbert Johnson

Michael Andrew Wohl

John Alan Eisenberg

Edward Herman Decker

Gary Lynn Cox

Francois Hebert

Howard D Bartlow

Alan Lai-Wai Yan

The present application encompasses methods and apparatus for heating a load such as clothes immersed in a medium such as water during a heating period. A method embodiment of the present invention comprises heating the load and medium within an enclosure by subjecting said load and medium to heated air originated from a conventional energy source; and applying heat to said load and medium within the enclosure via an AC electrical field, embodied as a capacitor, originated from an RF power source.

Hybrid RF/conventional clothes dryer

The present invention encompasses methods and apparati for heating a load () such as clothes immersed in a medium (such as water) during a heating period. A method embodiment of the present invention comprises heating the load () and medium within an enclosure () by subjecting said load () and medium to heated air () originated from a conventional energy source (); and applying heat to said load () and medium within the enclosure () via an AC electrical field, embodied as a capacitor, originated from an RF power source ().

A clothes dryer apparatus () comprising an electrically conductive, grounded, generally cylindrical rotatable drum () having a hollow interior adapted to contain a load () of wet clothes to be dried. The drum's () exterior surface () is partially indented to form one or more integral, generally ring-shaped insulated notches (). An electrically conductive, generally flat arcuate anode () is positioned within each notch (), with no physical contact between an anode () and its corresponding notch (). Each anode () is spatially fixed with respect to the rotatable drum (), and is electrically isolated from conductive portions of the drum (). A source () of RF power (), operating at a single fixed frequency, is coupled to each anode ().

Fixed radial anode drum dryer

Methods and apparatus for heating an objectthat includes an absorbed medium. A method embodiment comprises: placing the objectincluding the medium into an enclosure; initiating a heating process by subjecting the objectand medium to a capacitive AC electrical field generated by an RF power sourceat a single low frequency; controlling the heating process by taking real time measurements; and making real time adjustments to the RF power sourcein response to the real time measurements. The objectsubstantially absorbs the medium in a first 'cool' state, and therefore has a maximum weight in the first 'cool' state. The objectis substantially free from the medium in a second &#x201c;heated&#x201d; state, due to substantial release of the medium from the object. The released medium is evaporated during the heating process. The heating process is completed when the objectis substantially transitioned into the second &#x201c;heated&#x201d; state. The method further comprises causing an air flowinside the enclosureto carry away evaporated medium out of the enclosure

Dielectric dryer drum

A method for RF dielectric heating an object having a variable weight including a medium is provided The method comprises: (A) placing the object having the variable weight including the medium into an enclosure; (B) adding an ionic substance to the medium; (C) initiating a heating process by subjecting the medium including the object to a variable AC electrical field; and (D) controlling the heating process. The method further comprises using an air flow having an ambient temperature, or being heated before getting into the enclosure, to carry away the evaporated medium from the enclosure.

Ionic adder dryer technology

A method for heating an object having a variable weight that includes a medium is provided. The method comprises: (A) placing the object having the variable weight including medium into an enclosure; (B) initiating a heating process by subjecting medium including the object having the variable weight to a variable AC electrical field; and (C) controlling the heating process. The object has substantially absorbed medium in a first 'cool' state and therefore includes a maximum weight in the first 'cool' state due to absorption of medium. The object is substantially free from medium in a second &#x201c;heated&#x201d; state due to substantial release of medium from the object, wherein the released medium is evaporated during the heating process. The heating process is completed when the object is substantially transitioned into the second &#x201c;heated&#x201d; state. The method further comprises using an air flow having an ambient temperature inside the enclosure to carry away the evaporated medium from the enclosure.

A method for heating a medium that includes an object having a variable weight is provided. The method comprises (A) placing medium including an object having variable weight into a variable enclosure having adjustable dimensions; (B) initiating a heating process by subjecting the medium including the object to a variable AC electrical field; (C) substantially continuously measuring an impedance of medium including the object during the heating process; (D) adjusting dimensions of said variable enclosure to optimize the heating process; (E) adjusting parameters of the variable AC electrical field to optimize the heating process; and (F) controlling the heating process.

High efficiency heat generator

The present invention discloses and claims the Silicon Carbide based Silicon structure comprising: () a Silicon Carbide substrate, () a Silicon semiconductor material having a top surface, and either bonded to the Silicon Carbide substrate via the bonding layer, or epitaxially grown on the Silicon Carbide substrate; and () at least one separation plug formed in the Silicon semiconductor material. The single bonding layer, or either layer of the double bonding layer, is selected from the group consisting of: {a Silicon dioxide layer; a Silicon layer; a carbon layer; a Silicon germanium (SiGe) layer; a tungsten silicide layer; a titanium suicide layer; and a cobalt silicide layer}. The separation plug extends from the top surface of the Silicon semiconductor material into the Silicon Carbide substrate at a separation plug depth level, and is configured to block the coupling between at least two adjacent active/passive structures formed in the Silicon semiconductor material.

High performance active and passive structures based on silicon material bonded to silicon carbide

A microwave transistor structure having a step drain region comprising: (A) a substrate having a top surface; (B) a silicon semiconductor material of a first conductivity type, having a first dopant concentration and a top surface; (C) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (D) at least one horizontal drain extension region of a second conductivity type and having a horizontal drain extension dopant concentration; (E) a step drain region formed in the silicon semiconductor material, and contacting the horizontal drain extension region; (F) a body region of the first conductivity type and having a body region dopant concentration; (G) a source region of the second conductivity type and having a source region dopant concentration; (H) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the horizontal drain extension region, the shield plate being adjacent and parallel to the horizontal drain extension region; the shield plate being adjacent and parallel to the conductive gate region; and (I) a conductive plug region.

Microwave transistor structure having step drain region

A microwave transistor structure comprising: (1) a substrate having a top surface; (2) a silicon semiconductor material of a first conductivity type; (3) a conductive gate; (4) a channel region of a second conductivity type; (5) a drain region of the second conductivity type; (6) a body of the first conductivity type; (7) a source region of the second conductivity type; (8) a shield plate region formed on the top surface of the silicon semiconductor material over a portion of the channel region, wherein the shield plate is adjacent and parallel to the drain region, and to the conductive gate region; and (9) a conductive plug region formed in the body region of the silicon semiconductor material, wherein the conductive plug region connects a lateral surface of the body region to the top surface of the substrate.

Microwave field effect transistor structure

A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type of the RF MOS transistor; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region, the dopant concentration of the second enhanced drain drift region is higher than the dopant concentration of the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type with the dopant concentration being at least equal to the dopant concentration of the semiconductor epi layer; (6) a source region of the second conductivity type located within the body region; (7) a body contact region of the first conductivity type contacting the body region; and (8) a plug region further comprising at least one conductive plug region, and at least one between-conductive-plug region.

Multiple conductive plug structure including at least one conductive plug region and at least one between-conductive-plug region for lateral RF MOS devices

Multiple conductive plug structure for lateral RF MOS devices

A microwave transistor structure comprising: (a) a SiC substrate having a top surface; (b) a silicon semiconductor material of a first conductivity type overlaying the top surface of the semiconductor substrate and having a top surface; (c) a conductive gate overlying and insulated from the top surface of the silicon semiconductor material; (d) a channel region of the first conductivity type formed completely within the silicon semiconductor material including a channel dopant concentration; (e) a drain region of the second conductivity type formed in the silicon semiconductor material and contacting the channel region; (f) a body region of the first conductivity type and having a body region dopant concentration formed in the silicon semiconductor material under the conductive gate region; (g) a source region of the second conductivity type and having a source region dopant concentration formed in the silicon semiconductor material within the body region; (h) a shield plate region being adjacent and being parallel to the drain region formed on the top surface of the silicon semiconductor material over a portion of the channel region; wherein the shield plate region is adjacent and parallel to the conductive gate region; and wherein the shield plate extends above the top surface of the silicon semiconductor material to a shield plate height level, and is insulated from the top-surface of the silicon semiconductor material; and (i) a conductive plug region formed in the body region of the silicon semiconductor material to connect a lateral surface of the body region to the top surface of the substrate.

Microwave field effect transistor structure on silicon carbide substrate

The lateral RF MOS device having two drain drift regions and a conductive plug source connection structure is disclosed. The usage of two drain drift regions results in the increased source-drain breakdown voltage and in increased maximum drain current density. The lateral RF MOS device of the present intention can be used for high power and high frequency applications.

Growing community of inventors

Los Altos, CA, United States of America

Pablo Eugenio D'Anna