Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Pablo Acosta Alba

Shay Reboh

Emmanuel Augendre

Frédéric Mazen

Sébastien Kerdiles

Sylvain Maitrejean

Vincent Reboud

Emmanuel Rolland

Philippe Rodriguez

Mathieu Opprecht

Thomas Lorne

Andréa-Carolina Quintero Colmena

Lara Casiez

Angela Alvarez Alonso

A method for modifying a strain state of at least one semiconductor layer includes providing a support over which is arranged at least one stack of layers including the semiconductor layer and a fusible layer, arranged between the semiconductor layer and the support. The method also includes melting at least one portion of the fusible layer including the passage of said at least one portion of the fusible layer from a solid state into a liquid state, the semiconductor layer remaining in the solid state during the melting step. A laser beam may be used for the melting. The melting with the laser beam may also cause the modification of the strain state of the semiconductor layer.

Method for modifying a strain state of at least one semiconductor layer

An optoelectronic device including a crystalline semiconductor layer based on GeSn and including a pin junction. This formed semiconductor layer includes a base portion; a single-crystal intermediate portion having an average value xof proportion of tin less than x, thus forming a barrier region against charge carriers flowing in an upper portion; and the single-crystal upper portion including a homogeneous medium with a proportion of tin x, and vertical structures having an average value xof proportion of tin greater than x, thus forming regions for emitting or for receiving infrared radiation.

Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region

The invention relates to a method for producing ohmic contacts, of type including a metal, a semiconductor and tin, including:

Method for forming ohmic contacts, particularly of Ni(GeSn) type implementing laser annealing

The invention relates to a method for forming a porous portion in a substrate, an implantation of ions in at least one region of a layer, for example based on a semiconductor material, so as to form a portion enriched with at least one gas in the implanted region, and then a laser annealing of the nanosecond type so as to form a porous portion. The use of the ion implantation makes it possible to dissociate the deposition of the layer based on semiconductor material from the incorporation of gas. A great variety of porous structures can be obtained by the method. These porous structures can be adapted for numerous applications according to the properties sought.

Method of forming a porous portion in a substrate

Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.

RF substrate structure and method of production

A method for transferring a thin layer from a donor substrate to a receiver substrate including the steps of implantation of species carried out in a uniform manner on the whole of the donor substrate to form therein an embrittlement plane which delimits the thin layer and a bulk part of the donor substrate, of placing in contact the donor substrate and the receiver substrate and of initiating and propagating a fracture wave along the embrittlement plane. The method comprises, before the placing in contact, a step of localised reduction of a capacity of the embrittlement plane to initiate the fracture wave. This step of localised reduction may be carried out by means of a localised laser annealing of the donor substrate.

Method for layer transfer with localised reduction of a capacity to initiate a fracture

A production method for a semi-conductor-on-insulator type multilayer stack includes ion implantation in a buried portion of a superficial layer of a support substrate, so as to form a layer enriched with at least one gas, intended to form a porous semi-conductive material layer, the thermal oxidation of a superficial portion of the superficial layer to form an oxide layer extending from the surface of the support substrate, the oxidation and the implantation of ions being arranged such that the oxide layer and the enriched layer are juxtaposed, and the assembly of the support substrate and of a donor substrate.

Multilayer stack of semiconductor-on-insulator type, associated production process, and radio frequency module comprising it

The invention relates to a method of healing defects related to implantation of species in a donor substrate () made of a semiconducting material to form therein a plane of weakness () in it separating a thin layer () from a bulk part of the donor substrate. The method comprises a superficial amorphisation of the thin layer, followed by application of a heat treatment on the superficially amorphised thin layer. The method comprises application of laser annealing to the superficially amorphised thin layer after the heat treatment, to recrystallise it in the solid phase.

Method of healing an implanted layer comprising a heat treatment prior to recrystallisation by laser annealing

A method for manufacturing a semiconductor-on-insulator type substrate for radiofrequency applications is provided, including the steps of: directly bonding a support substrate of a single crystal material and a donor substrate including a thin layer of a semiconductor material, one or more layers of dielectric material being at a bonding interface thereof; transferring the thin layer onto the support substrate; and forming an electric charge trap region in the support substrate in contact with the one or more layers of the dielectric material present at the bonding interface, by transforming a buried zone of the support substrate into a polycrystal.

Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer

A method of healing defects generated in a semiconducting layer by implantation of species made in a substrate to form therein an embrittlement plane separating a solid part of the substrate from the semiconducting layer, the semiconducting layer having a front face through which the implanted species pass. The method comprises local annealing of the substrate causing heating of the semiconducting layer, the intensity of which decreases from the front face towards the embrittlement plane. The local annealing may comprise a laser irradiation of a front surface of the substrate.

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Grenoble, France

Pablo Acosta Alba