Korea Institute of Science and Technology

Ouk Jae Lee

Hyung Jun Kim

Byoung Chul Min

Seok Min Hong

Dong Soo Han

Hyun Woo Koo

Tae Eon Park

Kyoung Whan Kim

Hyun Cheol Koo

Ki Hyuk Han

A random number generator using a stochastic magnetic tunneling junction structure is proposed. The random number generator includes: a first magnetic tunneling junction structure including a first pinned layer, a first tunnel junction layer, and a first free layer that are sequentially stacked, and stochastically having a parallel state and an anti-parallel state in which a magnetization direction of the first pinned layer and a magnetization direction of the first free layer is parallel and anti-parallel, respectively; and a first power supplier connected to the first magnetic tunneling junction structure and configured to supply AC voltage/current to the first magnetic tunneling junction structure.

Random number generator using stochastic magnetic tunneling junction structure

A nano spintronic device for using the spin current of a ferromagnetic material and the spin current of a heavy metal channel. The device includes a lower channel layer, a free layer, a pinned layer, an insulating film layer, and an upper channel layer. When current flows upon application of power, electrons are divided into +y-polarized spins and −y-polarized spins in the lower channel layer, thereby generating torque in the free layer. The torque switches the magnetization direction of the free layer to an +y-axis direction or an −y-axis direction so that the free layer stores magnetization information according to the magnetization direction. When current flows in the upper channel layer, the current flows into the pinned layer so that electrons in the pinned layer are divided into +y-polarized spins and −y-polarized spins. The insulating layer insulates the free layer and the pinned layer from each other. When power is supplied, current flows in the upper channel layer and flows into the pinned layer, thereby inducing polarized spins in the pinned layer, resulting in the generation of torque in the free layer.

Nano spintronic device using spin current of ferromagnetic material and heavy metal channel

A logic function device according to an embodiment of the present invention includes one or more function reconfiguring units having magnetization in one direction set by spin torque caused due to an function reconfiguring current, and an output terminal formed at an end thereof; and one or more input units formed on the function reconfiguring unit and having magnetization in the one direction set by spin torque caused due to an input current, wherein an output voltage of the output terminal is determined on the basis of whether a magnetization direction of the function reconfiguring unit and a magnetization direction of the input unit are parallel or anti-parallel.

Logic device using spin torque

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Seoul, South Korea

Ouk Jae Lee