Siemens Aktiengesellschaft

Ottomar Jantsch

Ingmar Feigt

Wolf Rudiger Willig

Jeno Tihanyi

Karl Hans Reiss

Bernd Reimann

Paul Eckstein

A charge coupled device (CCD-device) for sensors and memory is produced so as to have a bipolar structure, with the doped regions and zones thereof being produced by ion implantation whereby a greater structure density is attained along with a reduction in the transfer coefficient .epsilon..

Process for producing bi-polar charge coupled devices by ion-implantation

An improved apparatus and method for producing a sectional view of a body in a short time in which rays such as X-rays or gamma rays are directed in a fan shaped beam through a cross section plane of the body element in different directions and the absorption of the radiation detected by a receiver scintillator whose photons release electrons which are subsequently accelerated and then converted into electrical signals.

Apparatus and method for producing a sectional view of a body

In a scanner for producing a sectional view of a body spatially resolving semiconductors, each having a charge transfer element associated therewith at which the formation of the signal is accomplished by charge storage and charge transfer in a semiconductor body, are utilized.

Apparatus for the implementation of a method for producing a sectional

A pressure transducer of miniature design with a silicon diaphragm which is provided with a monolithic resistor arrangement, the resistance of which changes with the deformation of the diaphragm in which the diaphragm is arranged between two overload bodies, one of which rests on a support body, whose surfaces facing the diaphragm are each provided with a pressure chamber and pressure canals to obtain an overload-proof pressure transducer which is very small and can be used for measuring large pressure differences.

Pressure transducer

An improved strip detector and a method for making such a detector in which a high resistivity N conduction semiconductor body has electrode strips formed thereon by diffusion which strips are formed so as to be covered by an oxide layer at the surface point of the PN junction and in which the opposite side of the semiconductor body then has a substantial amount of material etched away to form a thin semiconductor upon which strip electrodes which are perpendicular to the electrodes on the first side are then placed.

Growing community of inventors

Erlangen, Germany

Ottomar Jantsch