Anadigics, Inc.

Agere Systems Inc.

Osvaldo J Lopez

Joel Lott

Robert J Bayruns

Juan Alejandro Herbsommer

Timothy Brooks Bambridge

Mahendra Singh

Hugo Fernando Safar

Thomas Herbert Shilling

Thomas William Arell

Henry Liwinski

Scott D Sweeney

Khanh C Nguyen

An electronic module has a non-conducting substrate having at least one opening and a die/carrier assembly mounted within the opening in the substrate. The assembly has a conducting carrier and one or more integrated circuit (IC) dies mounted to the carrier. The invention may be implemented as an electronic system comprising a circuit board (CB) and at least one such electronic module mounted to the CB.

Packaging for electronic modules

An amplifier module has a substrate, as assembly having one or more integrated circuit (IC) dies mounted to the substrate, and one or more other electronic components mounted to the substrate. The assembly receives an input signal and generates an amplified output signal. The one or more other electronic components perform one or more amplifier-related functions. The amplifier module is adapted to be mounted to a circuit board (CB) as a distinct electronic package. The invention may be implemented as an electronic system having the CB and at least one such amplifier module mounted to the CB.

Intelligent high-power amplifier module

An IC device includes an MOS device having a gate terminal, a source terminal and a drain terminal, the gate terminal being operatively coupled to an input of the IC device, the drain terminal being operatively coupled to an output of the IC device, and the source terminal being coupled to a negative voltage supply. The IC device further includes a bias generator operatively coupled to the gate terminal of the MOS device, the bias generator generating a bias voltage and/or a bias current for biasing the MOS device at a substantially constant quiescent operating point. The bias generator is configured such that the bias voltage and/or bias current varies as a function of a junction temperature of the MOS device. In this manner, the bias generator accurately tracks one or more operating conditions of the MOS device, thereby improving the performance of the device.

Metal-oxide-semiconductor device having integrated bias circuit

A power amplifier circuit whose performance is optimized by operating its stages in substantially close to a Class B mode by reducing quiescent current during low driver signal levels. As the driver signal amplitude increases, the operation of the amplifier is configured to dynamically adjust to be in a Class AB mode, thereby increasing the power efficiency of the overall circuit at kiw drive levels. A further enhancement to the power amplifier circuit includes a temperature compensation circuit to adjust the bias of the amplifier so as to stabilize the performance in a wide temperature range.

Low bias current/temperature compensation current mirror for linear power amplifier

An active clamping circuit for a multi-stage power amplifier includes a feedback circuit which affects the gain of the amplifier. The feedback circuit feeds an output via a filter and a clamping transistor to an input of at least one stage of the power amplifier. The output fed to the filter and clamping transistor may be tapped from one or more diodes belonging to a diode stack connected to the power amplifier's output.

Active clamping circuit for power amplifiers

A power amplifier circuit is disclosed, whose power efficiency is optimized by operating its stages in substantially close to a Class B mode by reducing the quiescent current during low driver signal levels. As the driver signal amplitude increases, the amplifier is dynamically biased to operate in a Class AB mode. A further enhancement to the power amplifier circuit includes a temperature compensation circuit to adjust the bias of the amplifier so as to stabilize the performance over a wide temperature range.

Technique for reducing local oscillator leakage in integrated frequency conversion circuits is disclosed, which provides coupling an external portion of a resonator circuit to the integrated frequency conversion circuit. The coupling is accomplished without using any of the DC power or ground pins of the conversion circuit. A frequency conversion circuit based on this technique includes resonator, oscillator, and mixer circuits. Part of the oscillator and mixer circuit is encapsulated in a package, whereas at least a portion of the resonator circuit is located outside the package. The outside portion of the resonator circuit connects to at least two external resonator pins of the package such that, during the operating of the conversion circuit, the net current entering the package via said external resonator pins is approximately zero.

Growing community of inventors

North Bergen, NJ, United States of America

Osvaldo J Lopez