Intel Corporation

Santa Clara

Oscar Ojeda

Jeremy D Ecton

Arnab Roy

Leonel R Arana

Nicholas S Haehn

Hiroki Tanaka

Suddhasattwa Nad

Hsin-Wei Wang

Robert Alan May

Timothy White

Brandon C Marin

Vahidreza Parichehreh

Chung Kwang Tan

Aleksandar Aleksov

Srinivas V Pietambaram

Kristof Darmawikarta

Gang Duan

Dilan Seneviratne

Javier Soto Gonzalez

Changhua Liu

Meizi Jiao

Matthew L Tingey

Sashi S Kandanur

Srinivas Venkata Ramanuja Pietambaram

Roy Dittler

Shruti Rajeev Jaywant

Rajat Goyal

Oladeji Fadayomi

An integrated circuit device, comprising a substrate comprising a dielectric material and a conductor on or within the dielectric material of the substrate. The conductor comprises a first portion comprising a first sloped sidewall, wherein a first base width of the first portion is greater than a first top width of the first portion. The conductor also comprises a second portion over the first portion, the second portion comprising a second sloped sidewall, wherein a second base width of the upper portion is greater than both a second top width of the second portion and the first top width of the first portion.

Multi-step isotropic etch patterning of thick copper layers for forming high aspect-ratio conductors

Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, the electronic package comprises a substrate and a conductive feature over the substrate. In an embodiment, a metallic mask is positioned over the conductive feature. In an embodiment, the metallic mask extends beyond a first edge of the conductive feature and a second edge of the conductive feature.

Subtractive etch resolution implementing a functional thin metal resist

A conductive route for an integrated circuit assembly may be formed using a sequence of etching and passivation steps through layers of conductive material, wherein the resulting structure may include a first route portion having a first surface, a second surface, and at least one side surface extending between the first surface and the second surface, an etch stop structure on the first route portion, a second route portion on the etch stop layer, wherein the second route portion has a first surface, a second surface, and at least one side surface extending between the first surface and the second surface, and a passivating layer abutting the at least one side surface of the second route portion.

Conductive route patterning for electronic substrates

Embodiments include a package structure with one or more layers of dielectric material, where an interconnect bridge substrate is embedded within the dielectric material. One or more via structures are on a first surface of the embedded substrate, where individual ones of the via structures comprise a conductive material and have a tapered profile. The conductive material is also on a sidewall of the embedded substrate.

Via structures having tapered profiles for embedded interconnect bridge substrates

Disclosed herein are via-trace structures with improved alignment, and related package substrates, packages, and computing device. For example, in some embodiments, a package substrate may include a conductive trace, and a conductive via in contact with the conductive trace. The alignment offset between the conductive trace and the conductive via may be less than 10 microns, and conductive trace may have a bell-shaped cross-section or the conductive via may have a flared shape.

Via-trace structures

Techniques and mechanisms for providing anisotropic etching of a metallization layer of a substrate. In an embodiment, the metallization layer includes grains of a conductor, wherein a first average grain size and a second average grain size correspond, respectively, to a first sub-layer and a second sub-layer of the metallization layer. The first sub-layer and the second sub-layer each span at least 5% of a thickness of the metallization layer. A difference between the first average grain size and the second average grain size is at least 10% of the first average grain size. In another embodiment, a first condition of metallization processing contributes to grains of the first sub-layer being relatively large, wherein an alternative condition of metallization processing contributes to grains of the second sub-layer being relatively small. A grain size gradient across a thickness of the metallization layer facilitates etching processes being anisotropic.

Method, device and system for providing etched metallization structures

Apparatus and methods are provided for flexible and stretchable circuits. In an example, a method can include forming a first flexible conductor on a substrate, the first flexible conductor including a first conductive trace surrounded on three sides by a first dielectric, and forming a second flexible conductor on top of the first flexible conductor, the first flexible conductor located between the second flexible conductor and the substrate, the second flexible conductor including a second conductive trace surrounded by a second dielectric.

Method for making a flexible wearable circuit

A method of anisotropic etching comprises forming a metal layer above a substrate. A mask layer is formed on the metal layer with openings defined in the mask layer to expose portions of the metal layer. The exposed portions of the metal layer are introduced to an active etchant solution that includes nanoparticles as an insoluble banking agent. In further embodiments, the exposed portions of the metal layer are introduced to a magnetic and/or an electrical field.

Enhanced etch anisotropy using nanoparticles as banking agents in the presence or absence of a magnetic or electrical field

The systems and methods described herein use at least one etchant and at least one photochemically active material in conjunction with electromagnetic energy applied simultaneous with the etchant and photochemically active material during the etching process. The interaction between the electromagnetic energy and the photochemically active material preferentially increases the etch rate in a direction along the axis of incidence of the electromagnetic energy, thereby permitting the anisotropic formation of voids within the semiconductor substrate. These anisotropic voids may be more closely spaced (i.e., arranged on a tighter pitch) than the isotropic voids produced using conventional etching technologies. By placing the voids in the semiconductor substrate on a tighter pitch, greater component density may be achieved.

Anisotropic etching systems and methods using a photochemically enhanced etchant

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Chandler, AZ, United States of America

Oscar Ojeda