University of California

Hughes Aircraft Company

Cyber Medical Imaging, Inc.

Other

Yeda Research and Develpment & Co. Ltd

Bar-ilan University

Oscar Magnus Stafsudd

James D Parsons

Anthony L Gentile

Rointan F Bunshah

Douglas C Yoon

Maie St John

Phyllis R Nelson

Scott N Mendenhall

John L Bowers

William J Kaiser

Nicolaos Georgiou Alexopoulos

Warren S Grundfest

Ioannis Kanellakopoulos

David Ferdinand Cahen

Igor Lubomirsky

Arie Zaban

Nicholas Bambos

Zachary D Taylor

Melvin E Pedinoff

Kristofer S Pister

Lee W Casperson

Morris Braunstein

Nocolaos G Alexopoulos

Amit Burstein

Jonathan G Grossman

Pei-Chi Jiang

Peter A Pellionisz

Asael Papour

Zachary Deis Taylor

A system for selective spectral illumination in an operating room includes a housing, at least one light source disposed within the housing, the at least one light source configured to emit electromagnetic radiation at a plurality of wavelengths, and a controller coupled to the at least one light source and configured to control the at least one light source to emit electromagnetic radiation at one or more of the plurality of wavelengths based on a status of operation of an optical imaging system in the operating room.

Method and system for selective spectral illumination for optical image guided surgery

A device and process in which a single continuous depositional layer of a polycrystalline photoactive material is deposited on an integrated charge storage, amplification, and readout circuit with an irregular surface wherein the polycrystalline photoactive material is comprised of a II-VI semiconductor compound or alloys of II-VI compounds.

Use of surface patterning for fabricating a single die direct capture dental X-ray imaging sensor

A device and process in which a single continuous depositional layer of a polycrystalline photoactive material is deposited on an integrated charge storage, amplification, and readout circuit with a surface exhibiting a periodic pattern of a prescribed size wherein the polycrystalline photoactive material is comprised of a II-VI semiconductor compound or alloys of II-VI compounds.

A time-resolved fluorescence imaging (TRFI) system that images a target medium without lifetime fitting. Instead of extracting the lifetime precisely, the system images the fluorophore distribution to allow for a simple and accurate method to obtain the fluorescence image without lifetime-extraction for time-resolved fluorescence imaging. An illumination source circuit for TRFI is also disclosed that shapes the excitation pulse. In one embodiment, the illumination source comprises an LED and stub line configured for generating a linear decay profile.

System and method for time-resolved fluorescence imaging and pulse shaping

A solar energy conversion system is presented. The system comprises at least one waveguide arrangement having at least one light input respectively. The waveguide arrangement comprises a core unit for passing input solar radiation therethrough and a cladding material arrangement interfacing with the core therealong. The cladding material arrangement is configured as an array of spaced-apart solar cells arranged along the core unit and having different optical absorption ranges, such that an interface between the waveguide core and the cladding arrangement spectrally splits the photons of the input solar radiation by causing the photons of different wavelengths, while passing through the core unit, to be successively absorbed and thereby converted into electricity by the successive solar cells of said array.

Solar cells arrangement

A method and system for ranging an object are disclosed. The method includes illuminating a field of view potentially including the object, synchronously receiving reflected signals from the field of view with and without illumination, capturing first and second images within an array, and generating a subtraction image using the images. One image is captured in the array while the other image is in the array. The first and second images include reflected signals from the field of view with and without illumination, respectively. The array includes first and second groups of lines that are unmasked and masked, respectively. In one exposure, the first group of lines is loaded with the first or second image. The image in the first group of lines is shifted into the second group. In another exposure, the first group of lines is loaded with the other image, which is shifted into the second group.

Method and apparatus for intelligent ranging via image subtraction

Improved microsensors are provided by combining surface micromachined substrates, including integrated CMOS circuitry, together with bulk micromachined wafer bonded substrates which include at least part of a microelectromechanical sensing element. In the case of an accelerometer, the proof mass is included within the wafer bonded bulk machined substrate, which is bonded to the CMOS surface machine substrate, which has corresponding etch pits defined therein over which the wafer bonded substrate is disposed, and in the case of accelerometer, the proof mass or thin film membranes in the case of other types of detectors such as acoustical detectors or infrared detectors. A differential sensor electrode is suspended over the etch pits so that the parasitic capacitance of the substrate is removed from the capacitance sensor, or in the case of a infrared sensor, to provide a low thermal conductance cavity under the pyroelectric refractory thin film. Where a membrane suspended electrode is utilized over an etch pit, one or more apertures are defined therethrough to avoid squeeze film damping. Accelerometers built according to the methodology are provided with a nulling feedback voltage to maintain the switch DC voltage across sensing capacitors in a null condition and to maintain high sensitivity without requiring either a precision transformer or regulated power sources in the capacitance bridge of the accelerometer.

CMOS integrated microsensor with a precision measurement circuit

Non-normal plane wave electromagnetic scattering from active guiding structures, such as dielectric films, generates large resonances at discrete plane-wave angles of incidence relative to an interface with the active film. These resonances are generated from a 'leaky' wave phase matching condition. Enhancement in the scattered field intensities on the order of 100 is achieved using finite diameter pump and probe laser beams and active films as thin as 6 microns. Solid state and dye lasers with unique characteristics are obtained. Oscillators, amplifiers, gyroscopic and nonlinear laser applications employing the active guiding structure or film provide enhanced performance.

Electromagnetic scattering in active guides

A new type of semiconductor material is disclosed which consists of a .beta.-SiC:metal carbide alloy having the general formula Si.sub.w (metal 1).sub.x (metal 2).sub.y (metal 3).sub.z C, where w+x+y+z=1 and 1&gt;w&gt;0. The metals are selected from the group consisting of Ti, Hf, Zr, V, Ta, Mo, W and Nb, with Ti, Hf, and Zr preferred. By selecting appropriate proportions of metal carbide and SiC, the alloy's bandgap may be tailored to any desired level between the bandgaps of the metal carbide and SiC. Semiconductor devices are preferably formed by epitaxially growing a layer of the new alloy upon a substrate having a .beta.-SiC or TiC type crystal structure. In addition to retaining the benefits of single-bandgap .beta.-SiC with certain advantages, the new alloys make it possible to implement various electrical devices that cannot be achieved with .beta.-SiC, and also have a potential for bandfolded superlattices for infrared detectors and lasers.

Silicon carbide:metal carbide alloy semiconductor and method of making

Non-normal plane wave electromagnetic scattering from active guiding structures, such as dielectric films, generates large resonances at discrete plane-wave angles of incidance relative to an interface with the active film. These resonances are generated from a 'leaky' wave phase matching condition. Enhancement in the scattered field intensities on the order of 100 is achieved using finite diameter pump and probe laser beams and active films as thin as 6 microns. Solid state and dye lasers with unique characteristics are obtained. Oscillators, amplifiers, cyroscopic and nonlinear laser applications employing the active guiding structure or film provide enhanced performance.

A semiconductor device wafer base wherein devices may be fabricated in silicon carbide, the base having a compatible substrate and a beta silicon carbide overlay layer epitaxially related to the substrate, the beta silicon carbide layer being unpolytyped, single crystal, uncracked, without twins, and having integrated circuit quality surface morphology. Preferably, the substrate is a single crystal of titanium carbide, which is the same cubic lattice-type as beta silicon carbide with a lattice parameter different from that of beta silicon carbide by less than about 1%. Additionally, the thermal expansion coefficients of beta silicon carbide and titanium carbide are nearly the same, minimizing the creation of thermal stresses during cooling and heating. The beta silicon carbide is useful in fabricating semi-conductor devices for use at much higher temperatures than is silicon, and for use at high power levels, at high frequencies, and in radiation hardened applications. The device base may be fabricated by any suitable technique, including reactive deposition and chemical vapor deposition.

Wafer base for silicon carbide semiconductor device

A semiconductor device wafer base wherein devices may be fabricated in silicon carbide, the base having a compatible substrate and a beta silicon carbide overlay layer epitaxially related to the substrate, the beta silicon carbide layer being unpolytyped, single crystal, uncracked, without twins, and having integrated circuit quality surface morphology. Preferably, the substrate is a single crystal of titanium carbide, which is the same cubic lattice-type as beta silicon carbide with a lattice parameter different from that of beta silicon carbide by less than about 1%. Additionally, the thermal expansion coefficients of beta silicon carbide and titanium carbide are nearly the same, minimizing the creation of thermal stresses during cooling and heating. The beta silicon carbide is useful in fabricating semiconductor devices for use at much higher temperatures than is silicon, and for use at high power levels, at high frequencies, and in radiation hardened applications. The device base may be fabricated by any suitable technique, including reactive deposition and chemical vapor deposition.

An RF excited metal waveguide laser wherein one of the two opposed electrodes forming the discharge region has its top surface thereof formed as a waveguide thus eliminating the dielectric sidewalls used in prior art metal waveguide lasers. In the preferred embodiment, an enclosure having metal sidewalls and bottom has one of the electrodes attached thereto and the opposite electrode is attached to a dielectric cover on the enclosure. The laser gas can be circulated through the entire enclosure to aid in the cooling of the electrodes. The preferred shape of the waveguide electrode is with a longitudinal and transverse concave radius of curvature.

RF Excited metal waveguide laser

Disclosed herein is a process for growing II-IV semiconductor crystals which includes providing both a II-IV semiconductor source material and a crystal growth support member in a predetermined dynamic vacuum. This vacuum is sufficient to create a predetermined overpressure at the source material and simultaneously remove impurities therefrom. The temperature of the support member is initally raised to a predetermined level above the temperature of the source material to thereby prevent vapor transport between the two. Then, the temperature of the support member is lowered to a predetermined value below that of the source material to produce a disassociation of elemental gases from the source material and initiate controlled vapor transport of the elemental gases from the source material to the support member. In this manner, compound semiconductor crystals of high purity and stoichiometry are formed on the surface of the support member.

Vapor transport process for growing selected compound semiconductors of

The specification describes a process for growing selected compound semiconductors of high stoichiometry and purity and includes the steps of providing both a dynamic vacuum and a predetermined temperature profile in a container or tube containing a chosen semiconductor source material. The dynamic vacuum is used to create a predetermined minimum overpressure. P.sub.min, in this container with respect to the vapor pressure of the source material, while simultaneously removing impurities through in opening in the container during the crystal growth process. This process involves the vapor transport of elements of the selected compound semiconductor from the source material to a suitable support member, such as a graphite crucible which is maintained at a predetermined uniform controlled temperature. Alternatively, the crystal growth process can be in the form of a vapor phase epitaxial process wherein the selected compound semiconductor is epitaxially deposited on a chosen semiconductor substrate whose temperature is also closely controlled.

Growing community of inventors

Los Angeles, CA, United States of America

Oscar Magnus Stafsudd