Sharp Kabushiki Kaisha Corporation

Sekisui Kaseihin Kogyo Kabushiki Kaisha

501 Sharp Kabushiki Kaisha

Osamu Yamamoto

Hiroshi Hayashi

Saburo Yamamoto

Toshihiko Yoshida

Nobuyuki Miyauchi

Shigeki Maei

Masanori Watanabe

Hidenori Kawanishi

Kazuaki Sasaki

Hiroshi Nakatsu

Sadayoshi Matsui

Taiji Morimoto

Haruhisa Takiguchi

Mitsuhiro Matsumoto

Tadashi Takeoka

Takahisa Kurahashi

Masaki Kondo

Toshimasa Hamada

Tetsurou Murakami

Ken Ohbayashi

Masumi Nakamichi

Shohichi Kato

Shouichi Ooyama

Shunichi Ozutsumi

Nobuybuki Miyauchi

A semiconductor light emitting device includes a first conductivity-type first semiconductor layer; an emission layer; a second conductivity-type second semiconductor layer; and a second conductivity-type transparent substrate transparent to light beams from the emission layer and directly bonded to the second semiconductor layer. The transparent substrate has a parallel surface almost parallel to the emission layer on an opposite side of the emission layer, and an inclined surface adjoining the parallel surface and inclined to the parallel surface. Light beams totally reflected on the parallel surface and light beams totally reflected on a side surface of the transparent substrate come incident to the inclined surface at an angle smaller than the critical angle, and emit out of the semiconductor light emitting device.

Semiconductor light emitting device having a current narrowing portion and manufacturing method for semiconductor light emitting device

A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and a current diffusion layer which is lattice-mismatched with the light-emitting structure. A lattice mismatch &#x394; a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is &#x2212;1% or smaller:&#x394;()/where ais a lattice constant of the current diffusion layer, and ais a lattice constant of the light-emitting structure.

Semiconductor light-emitting diode

A light-emitting diode includes: a semiconductor substrate; and a layered structure, made of an AlGaInP type compound semiconductor material and provided on the semiconductor substrate. The layered structure includes: a light-emitting structure composed of a pair of cladding layers and an active layer for emitting light provided between the pair of cladding layers; and a current diffusion layer which is lattice-mismatched with the light-emitting structure. A lattice mismatch &#x394;a/a of the current diffusion layer with respect to the light-emitting structure defined by the following expression is &#x2212;1% or smaller:&#x394;=()/where ais a lattice constant of the current diffusion layer, and ais a lattice constant of the light-emitting structure.

A semiconductor laser device includes a substrate having one of p- and n-conductivity types, and a current constrictive layer formed on a surface of the substrate and having the other type of conductivity. The current constrictive layer has a through-channel extending to the surface of the substrate for defining a current path in a direction perpendicular to the surface of the substrate. The through-channel is of a belt-like pattern extending in a direction perpendicular to end surfaces of the substrate. A third cladding layer having the one type of conductivity is filled in the through-channel, a surface of the third cladding layer being flush with a surface of a current constrictive layer. A first cladding layer, an active layer, and a second cladding layer which constitute a double heterostructure are formed over the third cladding layer and current constrictive layer.

Semiconductor light-emitting device capable of having good stability in

A hyper-resolution optical device which can focus a beam of light to a diameter less than the diffraction limit. The optical device has an optical system disposed on a transmissive substrate. One component in the optical system is a hyper-resolution optical component which passes or reflects light and which has a central portion which does not pass or reflect light, respectively. The hyper-resolution optical component can be integrated with the transmissive substrate. Such optical devices are particularly suitable for optical pick-up devices, laser printers, sensors.

Hyperresolution optical system

A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.

Method for producing a semiconductor laser device

A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lower surfaces, the upper surface having a stepped portion, the stepped portion dividing the upper surface into at least a first area and a second area; a current confining layer, formed on the upper surface of the substrate, the current confining layer being discontinuous at the stepped portion, the current flowing through an area between the first area and the second area of the substrate; a multilayer structure formed on the current confining layer, the multilayer structure including the active layer; a first electrode which covers only part of an upper surface of the multilayer structure; and a second electrode formed over the lower surface of the substrate. In the semiconductor light emitting device, the light generated from part of the active layer is extracted to the outside through a portion of the upper surface of the multilayer structure which is not covered with the first electrode.

Semiconductor light emitting device with current confining layer

A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.

Light-emitting diode having a surface electrode of a tree-like form

A semiconductor laser device is provided which is constituted by semiconductor materials so as to emit laser light from a cavity end facet, the laser light being excited in a waveguide within an active layer sandwiched between a pair of cladding layers, wherein a window layer made of a semiconductor material having a band gap greater than that of the active layer is formed on the cavity end facet from which the laser light is emitted, so as to have a thickness sufficient to prevent local generation of crystal defects by lattice mismatching between the semiconductor material of the window layer and the semiconductor materials at the cavity end facet. There is also provided a method for producing such a semiconductor laser device with high efficiency.

Semiconductor laser device and a method for producing the same

A light wavelength converter which includes a laser beam source for radiating fundamental waves, a first optical waveguide formed on a substrate so as to convert the fundamental waves into harmonics which are radiated through the substrate, a grating coupler provided on the substrate so as to receive the harmonics propagated through the substrate, and a second optical waveguide formed on the substrate, the second optical guide being connected to the grating coupler so as to radiate the harmonics outside.

Light wavelength converter for a wavelength of laser beams into a short

There is provided a method for the production of a semiconductor laser device which emits laser light from an end facet thereof. This method comprises the steps of: forming a multi-layered structure including an active layer for laser oscillation on a semiconductor substrate; etching the semiconductor substrate and the multi-layered structure to form a pluralilty of striped grooves parallel to each other in such a manner that a plurality of projections are formed on the side face of the multi-layered structure in the striped grooves; separating the projections from the multi-layered structure to form a pair of cleavage planes each functioning as a resonator facet; forming a large-band-gap layer on at least one of the cleavage planes on the light-emitting side, the large-band-gap layer having a larger band gap than that of the active layer; forming a reflecting film on the large-band-gap layer; and finally cleaving the semiconductor substrate and the multi-layered structure to obtain a plurality of semiconductor laser devices.

Method for the production of a semiconductor laser device

A laser beam oscillating apparatus which includes a plurality of semiconductor laser beam oscillators (21, 22, 23) oscillating laser beams of a different wavelength from each other, an optical waveguide (12) formed on a substrate (11) so that the oscillated laser beams propagate therein and are then emitted in the same direction from the output end thereof and an optical coupler (13) to introduce the laser beams into the optical waveguide, thus allowing simultaneous introduction of these semiconductor laser beams of different wavelengths into the optical waveguide and simultaneous output of them in the same direction from the output end thereof.

Laser beam oscillating apparatus

An optical information processing apparatus which includes a substrate of a transparent material, first and second optical waveguides formed on opposite faces of said transparent substrate, a light introducing device for introducing reflected light from an information writing medium into the first and second optical waveguides, and a detecting device for detecting a reproduction signal, tracking error signal and focusing error signal based on the reflected light introduced into the first and second optical waveguides.

Optical information processing apparatus

A light wavelength converter which includes a light source for emitting fundamental waves having a desired wavelength, a first loop-shaped optical waveguide for converting the fundemental waves into harmonics, and a second optical waveguide for receiving the light from the source, wherein the two waveguides are coupled by an optical directional coupler.

Growing community of inventors

Nara, Japan

Osamu Yamamoto