Gigaphoton Inc.

Komatsu Corporation

Kabushiki Kaisha Komatsu Seisakusho

Kyushu University

Other

Ushio Denki Kabushiki Kaisha

Ushio Denki

Ushio Inc.

Kabushiki Kaisha Komatsu

Gigaphonton Inc.

Gigiphoton Inc.

Arms Komatsu Ltd.

Osamu Wakabayashi

Kouji Kakizaki

Masato Moriya

Hakaru Mizoguchi

Tatsuya Yanagida

Tamotsu Abe

Shinji Nagai

Hiroaki Tsushima

Takashi Suganuma

Takayuki Yabu

Takahito Kumazaki

Akira Endo

Takashi Onose

Toru Suzuki

Hideo Hoshino

Tsukasa Hori

Yukio Watanabe

Junichi Fujimoto

Tatsuya Ariga

Krzysztof Nowak

Masahiko Kowaka

Akira Sumitani

Takeshi Asayama

Takashi Matsunaga

Georg Soumagne

Takeshi Ohta

Masanori Yashiro

Yoshifumi Ueno

Toshihiro Nishisaka

Hiroshi Someya

Hitoshi Nagano

Yukio Kobayashi

Fumika Yoshida

Takanobu Ishihara

Hiroshi Umeda

Natsushi Suzuki

Yoshiho Amada

Akiyoshi Suzuki

Akira Suwa

Takashi Saito

Hideyuki Hayashi

Hirotaka Miyamoto

Tooru Abe

Hiroshi Ikenoue

Noritoshi Ito

Akihiko Kurosu

Koichi Fujii

Hiroshi Tanaka

Yasufumi Kawasuji

Satoshi Tanaka

Miwa Igarashi

Hiroyuki Masuda

Yuji Minegishi

Yasuo Itakura

Masaki Arakawa

Yutaka Shiraishi

Kiwamu Takehisa

Fumio Iwamoto

Koji Kakizaki

Tatsuo Enami

Michio Shinozaki

Taisuke Miura

Youichi Sasaki

Hidenobu Kameda

Koichi Kajiyama

Shinji Okazaki

Kouji Ashikawa

Masaya Yoshino

Kotaro Sasano

Masakazu Kobayashi

Kaoru Saito

Kazuhiro Suzuki

Masaki Nakano

Hiroshi Komori

Kyohei Seki

Hiroshi Furusato

Seiji Nogiwa

Katsuhiko Wakana

Koji Shio

Yousuke Fujimaki

Tomoyuki Ohkubo

Katsutomo Terashima

Masahiro Inoue

Teiichirou Chiba

Atsushi Ueda

Shinji Ito

Kiyoharu Nakao

Shoichi Sakanishi

Keisuke Ishida

Toshio Yamashita

Yoshiyuki Honda

Takashi Ohara

Hiroaki Nakarai

Hirokazu Tanaka

Motoki Niwano

Masashi Shinbori

Shinichi Matsumoto

Kazuya Takezawa

Daisuke Tei

Hiroyuki Ikeda

An electronic device manufacturing method according to an aspect of the present disclosure includes determining magnification in a scanning width direction based on a pattern formed in a scanning field of a wafer; measuring a wafer height at points in the scanning field and determining an average value of the wafer height in the scanning width direction; determining a wavelength range of a pulse laser beam in which an allowable CD value is obtained in a case of a focus position based on the average value of the wafer height; determining a first wavelength of the pulse laser beam at which the determined magnification is obtained and determining a target wavelength based on the wavelength range and the first wavelength; outputting a pulse laser beam controlled to have the target wavelength for each pulse; and performing exposure of the scanning field of the wafer to the pulse laser beam.

Electronic device manufacturing method

A light source parameter information management method for managing information on a parameter of a light source used in an exposure apparatus, the method including acquiring priority target parameter information containing an item of a variable that is a priority target parameter prioritized in the operation of the light source, and a target value of the variable, estimating maintenance information based on the priority target parameter information, the maintenance information containing a value representing the life of a consumable in the light source until maintenance of the consumable, and outputting the maintenance information.

Light source parameter information management method, light source parameter information management apparatus, and computer readable medium

A laser device includes a first actuator configured to adjust an oscillation wavelength of pulse laser light; a second actuator configured to adjust a spectral line width of the pulse laser light; and a processor configured to determine a target spectral line width by reading data specifying a number of irradiation pulses of the pulse laser light with which one location of an irradiation receiving object is irradiated and a difference between a shortest wavelength and a longest wavelength, control the second actuator based on the target spectral line width, and control the first actuator so that the oscillation wavelength periodically changes every number of the irradiation pulses between the shortest wavelength and the longest wavelength.

Laser device and electronic device manufacturing method

A line narrowing device includes a first prism; first and second gratings arranged on the optical path of the light beam having passed through the first prism at positions different in a direction of grooves of either the first grating or the second grating; a beam adjustment optical system arranged on the optical path of the light beam between the first prism and at least one grating of the first and second gratings, and causing a first portion of the light beam to be incident on the first grating and causing a second portion of the light beam to be incident on the second grating; a first actuator adjusting an incident angle of the first portion on the first grating; a second actuator adjusting an incident angle of the second portion on the second grating; and a third actuator adjusting an energy ratio of the first and second portions.

Line narrowing device and electronic device manufacturing method

An exposure system according to an aspect of the present disclosure includes a laser apparatus emitting a pulse laser beam, an illumination optical system guiding the pulse laser beam to a reticle, a reticle stage moving the reticle, and a processor controlling emission of the pulse laser beam and movement of the reticle. The exposure system performs scanning exposure of a semiconductor substrate by irradiating the reticle with the pulse laser beam. The reticle has first and second regions. The processor instructs the laser apparatus about, based on proximity effect characteristics corresponding to the first and second regions, a value of a control parameter of the pulse laser beam corresponding to each region so that the laser apparatus emits the pulse laser beam with which a difference of the proximity effect characteristic of each region from a reference proximity effect characteristic is in an allowable range.

Exposure system, laser control parameter production method, and electronic device manufacturing method

An exposure system according to an aspect of the present disclosure includes a laser apparatus that outputs pulsed laser light, an illuminating optical system that guides the pulsed laser light to a reticle, a reticle stage, and a processor that controls the output of the pulsed laser light from the laser apparatus and the movement of the reticle performed by the reticle stage. The reticle has a first region where a first pattern is disposed and a second region where a second pattern is disposed, and the first and second regions are each a region continuous in a scan width direction perpendicular to a scan direction of the pulsed laser light, with the first and second regions arranged side by side in the scan direction. The processor controls the laser apparatus to output the pulsed laser light according to each of the first and second regions by changing the values of control parameters of the pulsed laser light in accordance with each of the first and second regions.

Exposure system and method for manufacturing electronic devices

A laser system according to one aspect of the present disclosure includes a wavelength-variable first solid-state laser device configured to output a first pulse laser beam; a wavelength conversion system including a first nonlinear crystal configured to wavelength-convert the first pulse laser beam and a first rotation stage configured to change a first incident angle of the first pulse laser beam on the first nonlinear crystal; an excimer amplifier configured to amplify a pulse laser beam wavelength-converted by the wavelength conversion system; and a control unit configured to receive, from an external device, data of a target center wavelength of an excimer laser beam output from the excimer amplifier, control a wavelength of the first pulse laser beam in accordance with the instructed target center wavelength, and control the first incident angle on the first nonlinear crystal in accordance with an average value of the target center wavelength.

Laser system and electronic device manufacturing method

A line narrowing device includes first and second prisms disposed at positions different in a wavelength dispersion direction of any of the first and second prisms, a third prism disposed on the optical path of an optical beam and through which the beam width of the optical beam is enlarged and first and second parts of the optical beam are incident on the first and second prisms, respectively, a grating disposed across the optical path of the first part having passed through the first prism and the optical path of the second part having passed through the second prism, a first actuator configured to adjust the incident angle of the first part on the grating, a second actuator configured to adjust the incident angle of the second part on the grating, and a third actuator configured to adjust an energy ratio of the first and second parts.

Line narrowing device, electronic device manufacturing method

An exposure method includes reading data representing a relationship between a first parameter relating to an energy ratio between energy of first pulsed laser light having a first wavelength and energy of second pulsed laser light having a second wavelength longer than the first wavelength and a second parameter relating to a sidewall angle of a resist film that is the angle of a sidewall produced when the resist film is exposed to the first pulsed laser light and the second pulsed laser light, and determining a target value of the first parameter based on the data and a target value of the second parameter; and exposing the resist film to the first pulsed laser light and the second pulsed laser light by controlling a narrowed-line gas laser apparatus to output the first pulsed laser light and the second pulsed laser light based on the target value of the first parameter.

Exposure method, exposure system, and method for manufacturing electronic devices

A laser processing apparatus includes a placement base on which a workpiece is placed, a beam shaping optical system that shapes laser light such that a first laser light irradiated region of a mask blocking part of the laser light has a rectangular shape having short edges and long edges, the beam shaping optical system capable of causing one of a first radiation width of the first irradiated region in the direction parallel to the short edges and a second radiation width of the first irradiated region in the direction parallel to the long edges to be fixed and causing the other to be changed, a projection optical system that projects a pattern on the mask onto the workpiece, and a mover that moves the first irradiated region at least in the direction parallel to the short edges to move a second laser light irradiated region of the workpiece.

Laser processing apparatus and method for processing workpiece

A laser radiation optical system for laser doping and post-annealing, the laser radiation system including A. a laser apparatus configured to generate pulsed laser light that belongs to an ultraviolet region, B. a stage configured to move a radiation receiving object in an at least one scan direction, the radiation receiving object being an impurity source film containing at least an impurity element as a dopant and formed on a semiconductor substrate, and C. an optical system including a beam homogenizer configured to shape the beam shape of the pulsed laser light into a rectangular shape and generate a beam for laser doping and a beam for post-annealing that differ from each other in terms of a first beam width in the scan direction but have the same second beam width perpendicular to the scan direction.

Laser radiation system

A pulse width expansion apparatus according to an aspect of the present disclosure includes a polarization beam splitter and a transfer optical system. The transfer optical system includes ¼-wavelength and reflection mirror pairs. The ¼-wavelength mirror pair include first and second ¼-wavelength mirrors. The first ¼-wavelength mirror provides ¼-wavelength phase shift and reflects a pulse laser beam. The second ¼-wavelength mirror provides ¼-wavelength phase shift and reflects the pulse laser beam reflected by the first ¼-wavelength mirror. The reflection mirror pair are disposed on an optical path before and after or between the ¼-wavelength mirror pair. The transfer optical system transfers an image of an input pulse laser beam on the polarization beam splitter to the optical path between the ¼-wavelength mirror pair at one-to-one magnification as a first transfer image and transfers the first transfer image to the polarization beam splitter at one-to-one magnification as a second transfer image.

Pulse width expansion apparatus and electronic device manufacturing method

A laser processing apparatus according to the present disclosure includes a placement base on which a processing receiving object is placed, an optical system that guides laser light to the processing receiving object, a gas supply port via which a gas is supplied to a laser light irradiated region of the processing receiving object, a gas recovery port via which the supplied gas is recovered, a mover that moves the irradiated region, and a controller that controls, in accordance with the moving direction of the irradiated region, the direction of the flow of the gas flowing from the gas supply port to the gas recovery port, and the controller changes the direction of the gas flow in response to a change in the moving direction of the irradiated region in such a way that the gas flows in the direction opposite the moving direction of the irradiated region.

Laser processing apparatus, laser processing system, and laser processing method

A machine learning method according to a viewpoint of the present disclosure is a machine learning method for creating a learning model configured to estimate the life of a consumable of a laser apparatus, the method including acquiring first life-related information containing data on a parameter relating to the life of the consumable, the data recorded in correspondence with different numbers of oscillation pulses during a period from the start of use of the consumable to replacement thereof, dividing the first life-related information into a plurality of levels each representing the degree of degradation of the consumable in accordance with the numbers of oscillation pulses to create training data, creating the learning model by performing machine learning using the created training data, and saving the created learning model.

Machine learning method, consumable management apparatus, and computer readable medium

A laser system according to one aspect of the present disclosure includes a first solid-state laser device, a wavelength conversion system, an excimer amplifier, and a control unit. The first solid-state laser device includes a first multiple semiconductor laser system, a first semiconductor optical amplifier, and a first fiber amplifier. The first multiple semiconductor laser system includes a plurality of first semiconductor lasers configured to perform continuous wave oscillation in a single longitudinal mode with different wavelengths, a first spectrum monitor, and a first beam combiner. The control unit controls an oscillation wavelength and light intensity of each line of a first multiline spectrum generated by the first semiconductor lasers to obtain an excimer laser beam having at least a target center wavelength or a target spectral line width instructed by an external device.

Growing community of inventors

Hiratsuka, Japan

Osamu Wakabayashi