Kabushiki Kaisha Toshiba

Osamu Usuda

Tatsuya Yamada

Kazuo Shimokawa

Yoshiki Endo

Masahiro Urase

Akio Nakagawa

Ichiro Omura

Yusuke Kawaguchi

Kenichi Matsushita

Noriaki Yoshikawa

Taizo Tomioka

Yasuhito Saito

Takashi Koyanagawa

Hiroshi Takei

Toshihisa Inoue

Haruki Arai

Morio Takahashi

Kazuhiko Kurahashi

Tomohiro Kawano

Taiki Miura

Masako Ooishi

Yoshihiko Sano

Eitaro Miyake

Koichiro Atsumi

Yoshihiko Tojo

Mituo Kobayashi

A semiconductor module comprises a mounting board. A plurality of power switching device chips are mounted on the mounting board by flip-chip bonding. The chip has an upper surface and a lower surface and is configured to face the upper surface toward the mounting board. A drive IC chip is mounted on the mounting board by flip-chip bonding. The drive IC chip is operative to drive gates of transistors formed in the plurality of power switching device chips. A plurality of heat sink members are located on the lower surfaces of the plurality of power switching device chips, respectively. A resinous member is provided to seal the plurality of power switching device chips and the drive IC chip in a single package.

Semiconductor module

A semiconductor device and manufacturing the semiconductor device are described. There is provided a method of manufacturing a semiconductor device including, disposing a lead frame inside an outer lead so as to couple between a coupling portion and a coupling acceptance portion, the lead frame including a chip mounting portion and the coupling acceptance portion, the outer lead including a frame portion with outer terminal portions and the coupling portion, disposing a semiconductor chip on the chip mounting portion, connecting between the outer terminal portions and the semiconductor chip with a plurality of wires or leads, sealing the outer terminal portion, the lead frame disposed the semiconductor chip on and the wires or the leads by a mold resin, cutting off the outer terminal portions from the outer lead, and uncoupling the coupling portion from the coupling acceptance portion.

Semiconductor device and method of manufacturing the same

Semiconductor device

In a semiconductor device in which copper or copper alloy bonding wire is bonded to an electrode pad on a semiconductor element, the electrode pad is formed of a first metal layer ohmically contacting the semiconductor element, a second metal layer hard enough not to be deformed at wire bonding step, and a third metal layer for bonding a copper wire, to suppress variation in the electric characteristics of a bonding portion and the production of stain in the semiconductor element at wire bonding step.

Semiconductor device having improved electrode pad structure

A lead frame is conveyed along a convey direction in a convey path filled with a reducing gas. A semiconductor pellet is placed on the lead frame at a die bonding portion. A bonding wire made of copper or a copper alloy is supplied to the next wire bonding portion. The lower end of the bonding wire is melted with an oxyhydrogen torch surrounded by an air curtain, thereby forming a ball. The bonding wire is guided into the convey path by a capillary. The ball is thermocompressed to an electrode pad of the semiconductor pellet. The other end of the bonding wire is fused and thermocompressed against the outer lead of the lead frame at a postbonding portion. The bonding wire is thus looped between the semiconductor pellet and the outer lead.

Apparatus and method for manufacturing semiconductor device

Growing community of inventors

Tatsuno, Japan

Osamu Usuda