Nihon Shinku Gijutsu Kabushiki Kaisha

Daido Tokushuko Kabushiki Kaisha

Osamu Tsukakoshi

Yuzo Sakurada

Hidenori Suwa

Shinichi Ono

Kouichi Niikura

Takashi Kawashima

Toshio Koike

Tomonao Hayashi

Masao Miyamura

Hiromichi Takei

Yoshio Kamata

Shoji Aiba

Kazuhiro Kashimoto

Yasuo Mihara

A parallel scan type ion implanter comprising multipole electrostatic deflectors and designed to produce an even and uniform dose distribution on the entire area of the substrate by maintaining the moving speed of the ion beam spot constant on the substrate is characterized in that it holds the rate of raising or lowering the deflection voltage stepwise along the vertical direction (Y-direction) constant and the manner of varying the rate of changing the deflection voltage along the horizontal direction (X-direction) with time as the function of the location of the moving beam spot on the substrate determined by the dimensional parameters of the multipole electrostatic deflectors assuming that the rate is normalized by the rate of changing the deflecting voltage when the beam spot passes the center of the substrate.

Parallel scan type ion implanter

A quadrupole mass spectrometer which gives a uniform mass separation over a large mass number range without being affected by the nob-linear characteristics of the components of a control circuit arrangement and comprises an all-solid-state control circuit by using an O-method according to the invention to compare the positive or negative peak value U+V or U-V of U+Vcos.omega. t or the positive or negative peak value V-U or --U+V of --U-Vcos.omega. t, U+Vcos.omega. t and --U-Vcos.omega. t being voltages given to two pairs of rods of a quadrupole section respectively, to reference voltage (U.sub.o +V.sub.o) or (U.sub.o -V.sub.o) or (--U.sub.o +V.sub.o) or (--U.sub.o -V.sub.o), U.sub.o and V.sub.o being a DC voltage and the peak value of RF voltage to which U and V should be controlled and minimize the difference between the peak value (RF+DC) voltages to the high precision reference voltages as mentioned above.

Zero method of controlling quadrupole mass spectrometer and control

An apparatus and method for controlling an electromagnet for a magnetron sputtering source controls electric currents flowing through a central coil and an inner peripheral coil of the electromagnet to flow in the same direction. Further, the direction of the electric current flowing through an outer peripheral coil is made to flow in the same direction as, and in the opposite direction to, the electric currents through the central coil and the inner peripheral coil. Therefore, the magnetic field to be generated in a space near the surface of the target moves between the central portion and the peripheral portion thereof each time the direction of the electric current flowing through the outer peripheral coil is reversed. Since the of high density plasma also moves in accordance with the magnetic field, the area of the target which is sputtered becomes wider and the efficiency of utilization of the target is improved.

Method and device for controlling an electromagnet for a magnetron

An ion implanation apparatus comprises a first multipole electrostatic deflector and a second multipole electrostatic deflector. The first multipole electrostatic deflector comprises five or more electrodes equally spaced around an optical axis to each of which voltage for offset-deflecting the ion beam at the predetermined angle and voltage for simultaneously sweeping the ion beam in X and Y directions are applied. The second multipole electrostatic deflector is disposed around a second optical axis starting from the center of the first deflector and directed towards a line which makes the predetermined angle with the axis of the first deflector, and comprises the same number of electrodes as the first deflector equally spaced around the second optical axis, to each of which voltage for sweeping the ion beam in X and Y directions are applied so that the ion beam is implanted on the target(s) at a constant angle therewith while keeping the direction of incidence of the ion beam parallel with the second optical axis.

Ion implantation apparatus

An ion implanter systems in which a deflector system comprises a first multiple pole electrostatic deflector having five or more poles for deflecting ion beams and a second multiple pole electrostatic deflector having poles of the same number as that of said first multiple pole electrostatic deflector and disposed coaxially at the rear of said first multiple pole electrostatic deflector for deflecting and pointing the ion beams deflected by said first multiple pole electrostaic deflector to a definitely predetermined direction, and said first and second deflectors are controlled so as to scan a region defined by an equilateral polygon whose sides are in number equal to or twice the poles of said each electrostatic deflector.

Ion implantation device

A parallel sweeping system for electrostatic sweeping ion implanters comprising an ion source for generating an ion beam, first and second multipole beam deflectors along and around a common optical axis and a target wafer to be raster-scanned by the deflected beam. The two deflectors have the same number of electrodes of five or more and have similar configurations. One electrode of the first deflector is paired with an electrode of the second deflector in the same plane common with the optical axis, but on the opposite side of the optical axis. The same sweeping voltage is applied simultaneously to each electrode of a pair in the same plane and predetermined different voltages to each pair of electrodes. Thus, a substrate is constantly raster-scanned by means of parallel ion beams with predetermined direction, namely raster-scanned with the ion beam all over a large wafer with exact parallelism to the optical axis.

Parallel sweeping system for electrostatic sweeping ion implanter

Magnet apparatus for providing a magnetic field having a gradient in an operation chamber comprising a cylindrical permanent magnet surrounding an outer periphery of the operation chamber and having opposite ends and a hollow interior, and a subsidiary yoke at one of the ends, the subsidiary yoke having a cylindrical portion extending into the hollow interior. The subsidiary yoke can include a flange portion. The cylindrical portion is inserted through the flange portion and fixed thereto with bolts. The permanent magnet can be made of Ba-ferrite, Sr-ferrite or the like.

Growing community of inventors

Hiratsuka, Japan

Osamu Tsukakoshi