Fujitsu Corporation

Fujitsu Media Devices Limited

Other

Fujitsu Component Limited

Drnc Holdings, Inc.

Fijitsu Limited

Osamu Tsuboi

Norinao Kouma

Hiromitsu Soneda

Hisao Okuda

Yoshihiro Mizuno

Satoshi Ueda

Ippei Sawaki

Tsuyoshi Matsumoto

Fumio Yamagishi

Satoru Momose

Yoshitaka Nakamura

Michio Ushigome

Fumihiko Nakazawa

Mi Xiaoyu

Kazuaki Karasawa

Naoyuki Nagao

Koichi Hashimoto

Ikuo Soga

Kenichi Inoue

Kazuo Itabashi

Wataru Futo

Yuji Yokoyama

Xiaoyu Mi

Tomohiko Tsutsumi

Yoshio Kikuchi

Kazutaka Yoshizawa

Ryozo Takasu

Suguru Warashina

Kazuaki Kurihara

Tsuyoshi Yamamoto

Masafumi Iwaki

Masato Matsumiya

Kuninori Kawabata

Kohei Shibata

Tamotsu Akashi

Shinji Yamashita

Masato Wakamura

Toshimi Ikeda

Tamotsu Yamamoto

Hirofumi Aota

Takayoshi Minami

Hiroshi Miyata

Hiroshi Tokunaga

Yasuhiro Omori

Shoji Okuda

Takuya Nishino

Masakazu Hori

A gas sensor includes: a gas sensor cartridge; and a gas sensor body to which the gas sensor cartridge, which includes: a case that has an intake port and an exhaust port and serves as a gas sensor chamber; a gas sensor device provided inside the case; an external connection terminal provided at the case and connected to the gas sensor device; a first sealing member that seals the intake port such that the intake port is opened when the gas sensor cartridge is attached to the gas sensor body; and a second sealing member that seals the exhaust port such that the exhaust port is opened when the gas sensor cartridge is attached to the gas sensor body, is detachably attached.

Gas sensor and gas sensor cartridge

A gas sensor which includes a solid electrolyte layer including positive charge carriers to which detection-target gas coordinates, an electrode arranged on part of a plane of the solid electrolyte layer, and a unit configured to accelerate movements of the positive charge carriers.

Gas sensor and sensor device

A photocatalyst made of cuprous bromide, wherein the cuprous bromide expresses a photocatalytic property of decomposing a substance brought into contact with the cuprous bromide by irradiation with light.

Photocatalyst, gas sensor device and gas sensor

A gas sensor device includes a first electrode, a second electrode, and a polythiophene film which is formed between the first and second electrodes to be electrically coupled to the first and second electrodes, and to which cuprous bromide is adsorbed.

Method of manufacturing gas sensor device

A semiconductor material includes polythiophene, sulfonic acid, and copper ion. The copper ion is bonded to the sulfonic acid.

Gas sensor, gas measurement apparatus, fabrication method for gas sensor and hydrogen sulfide concentration measurement method

A sensor device includes a first electrode and a second electrode disposed over a substrate, and a sensitive film including a base film which couples the first electrode and the second electrode to each other and contains Cu and a halogen element and PEDOT/PSS which bonds to the base film.

Sensor device, method for producing same, and gas sensor

A gas sensor device has a crystalline film of copper(I) bromide, wherein a crystal surface of the copper(I) bromide is formed of a stepped terrace having a flat face and a steep slope.

Gas sensor device, gas measuring equipment, and method for fabricating gas sensor device

A distance measuring device includes one or more processors configured to: detect a wave formed by synthesizing a frequency-swept electromagnetic wave transmitted to an object with a wave reflected on the object; measure, based on the synthesized wave, a distance to the object; calculate a displacement-caused inclination, caused by the displacement of the object, of a power spectrum of the synthesized wave; and measure the distance based on a signal in which the displacement-caused inclination has been removed from the power spectrum.

Distance measuring device, water level measurement system, and distance measurement method

A gas sensor, which includes a solid electrolyte layer including positive charge carriers to which detection-target gas coordinates, an electrode arranged on part of a plane of the solid electrolyte layer, and a unit configured to accelerate movements of the positive charge carriers.

A gas sensor device includes: a sensor film including a sensor surface and a resistance which increases with an increase in an amount of gas adsorbed on the sensor surface; a first electrode, a second electrode, and a third electrode that are electrically coupled to the sensor film; and a protective film that covers the sensor surface in a region between the first electrode and the second electrode, wherein the sensor surface is exposed in a region near the third electrode.

Gas sensor device, gas measurement method, and gas measurement device

A gas sensor includes a p-type semiconductor layer in which a surface at a contacting side with detection target gas is covered with tertiary amine and two electrodes electrically coupled with each other through the p-type semiconductor layer.

Gas sensor and information processing system

A water amount measurement device includes a light emitting element to emit light, a light receiving element to receive the light reflected by a liquid surface and by a liquid bottom at a bottom surface within a pipeline, a storage to store a distance from the light emitting element to the liquid bottom, and a processor. The processor computes a water level of the liquid flowing through the pipeline according to different formulas depending on whether a comparison result of distance data obtained based on an output signal of the light receiving element, and the distance at a time of measurement, includes a component corresponding to a distance exceeding the distance generated by the reflection from the liquid bottom, or the comparison result includes a component corresponding to a distance less than the distance generated by the reflection from the liquid surface.

Water amount measurement device and water amount monitoring system

A gas sensor includes a p-type semiconductor layer that contains copper or silver cations and contacts with detection target gas, a first electrode that is a Schottky electrode to the p-type semiconductor layer, a high-resistance layer that is provided between the p-type semiconductor layer and the first electrode such that the p-type semiconductor layer and the first electrode partly contact with each other and has resistance higher than that of each of the p-type semiconductor layer and the first electrode, and a second electrode that is an ohmic electrode to the p-type semiconductor layer.

Gas sensor and sensor apparatus

A measurement device includes a first flow passage, a heating unit provided on one end side of the first flow passage, a gas detection unit provided on one end side of the first flow passage and capable of detecting a gas through heat applied from the heating unit, and a particle measurement unit which optically measures, at an upper side than the heating unit of the first flow passage, particles passing through the first flow passage.

Measurement device, measurement system, and measurement method for measuring particle and gas

Growing community of inventors

Kawasaki, Japan

Osamu Tsuboi