International Business Machines Corporation

Au Optronics Corporation

Other

Kabushiki Kaisha Toshiba

Osamu Tokuhiro

Takatoshi Tsujimura

Mitsuo Morooka

Takashi Miyamoto

Hiroyuki Ueda

Kohichi Miwa

Masahiko Machida

Taroh Hasumi

A method and an apparatus are provided for manufacturing an active matrix device including a top gate type TFT. A manufacturing process of the top gate type TFT includes the steps of forming an oxide film on the inner wall of a CVD processing chamber and arranging a substrate having source and drain electrodes formed thereon in the processing chamber. Additional steps include doping the source and drain electrodes with P, and forming an a-Si layer and a gate insulating film in the processing chamber. Furthermore, an apparatus is provided for manufacturing an active matrix device including a top gate type TFT having the inner surface of the processing chamber coated with the oxide film.

Method and apparatus for manufacturing active matrix device including top gate type TFT

The present invention improves a productivity in growing an a-Si film in a thin film transistor and to obtain an excellent thin film transistor characteristic. More specifically, disclosed is a thin film transistor in which an amorphous silicon film, a gate insulating filmand a gate electrode are sequentially stacked on an insulating substrate. The amorphous silicon filmincludes a low defect-density amorphous silicon layerformed at a low deposition rate and a high deposition rate amorphous silicon layerformed at a deposition rate higher than that of the low defect-density amorphous silicon layer. The low defect-density amorphous silicon layerin the amorphous silicon filmis grown closer to the insulating substrate, and the high deposition rate amorphous silicon layeris grown closer to the gate insulating film

Thin film transistor, liquid crystal display device and method of fabricating the thin film transistor

A method of manufacturing a liquid crystal panel comprises the steps of forming a gate insulating film, a channel layer and an etching stopper layer on a transparent substrate bearing a gate electrode, exposing the substrate to light from its back surface side by using the gate electrode as a light shielding mask by photolithography, developing the resist, etching the etching stopper layer, forming a source/drain layer, and etching the source/drain layer and a remaining part of the etching stopper by chemical gas phase etching.

Liquid crystal device, liquid crystal display panel and method for manufacturing the same

An active matrix substrate includes a gate electrode, a gate insulating film, a semiconductor layer, a source electrode and a drain electrode, which are sequentially deposited on an insulating substrate. A transparent conductive layer is deposited on the source and drain electrodes so that the transparent conductive layer includes a portion deposited to be substantially the same pattern as those of the source and drain electrodes. The transparent conductive layer is connected to either the source electrode or the drain electrode to form a pixel electrode. A gate line is further included on which the gate insulating film is deposited. The gate line is to be connected to the gate electrode.

Active matrix substrate and manufacturing method thereof

Thin film transistor, liquid crystal display panel, and method of manufacturing thin film transistor

The present invention reduces the number of necessary steps in a thin-film-transistor manufacturing process and prevents an abnormal potential from being generated due to a leakage current from another signal line. A thin film transistor comprises a gate electrode disposed on a predetermined substrate and formed in a predetermined pattern, a semiconductor layer formed correspondingly to patterning of the gate electrode , a pixel electrode interposed by the semiconductor layer, and a signal electrode interposed by the semiconductor layer and disposed at a predetermined interval from the pixel electrode , in which the signal electrode is disposed at such a position where the signal electrode prevents crosstalk leakage current flowing from adjacent signal lines and to the pixel electrode via the semiconductor layer.

A liquid crystal display panel (and a method for manufacturing the liquid crystal display panel) includes a gate line and a signal line intersecting the gate line at an intersection portion where the gate line and the signal line intersect each other. The gate line includes at least two conductive portions and at least one opening portion on the intersection portion.

Method for manufacturing a liquid crystal display panel having a gate line with at least one opening

The present invention improves a productivity in growing an a-Si film in a thin film transistor and to obtain an excellent thin film transistor characteristic. More specifically, disclosed is a thin film transistor in which an amorphous silicon film , a gate insulating film and a gate electrode are sequentially stacked on an insulating substrate . The amorphous silicon film includes a low defect-density amorphous silicon layer formed at a low deposition rate and a high deposition rate amorphous silicon layer formed at a deposition rate higher than that of the low defect-density amorphous silicon layer . The low defect-density amorphous silicon layer in the amorphous silicon film is grown closer to the insulating substrate , and the high deposition rate amorphous silicon layer is grown closer to the gate insulating film

Liquid crystal display device having a thin film transistor element including an amorphous film containing a low-defect density layer and a high-defect densisty layer

A thin film transistor and method of making the same is disclosed in which a contact hole is formed with a flattened interface between openings in an inorganic material passivation layer and an organic material interlayer insulating film thereabove. The method includes etching an opening in the interlayer insulating film, using that opening as a mask for subsequently etching a self-aligned opening in the passivation layer, and again etching the interlayer insulating film in a develop back process to obtain a contact hole having a flattened inner sidewall.

Thin film transistor and method for manufacturing the same

The present invention relates to minimizing a leakage current in a floating island portion formed in a thin film transistor. More specifically, the present invention is directed to a thin film transistor including: a source electrode and a drain electrode disposed above an insulating substrate at a predetermined interval; an s-Si film disposed in relation to the source electrode and drain electrode ; a gate insulating film overlapping the a-Si film ; and a gate electrode overlapping the gate insulating film , in which the a-Si film is disposed between the source electrode and the drain electrode and has a floating island portion above which or beneath which the gate electrode is not formed, and boron ions are implanted into this portion to form a boron-ion-implanted region

Thin film transistor, and manufacturing method thereof

A liquid crystal display panel includes a gate line and a signal line intersecting the gate line at an intersection portion where the gate line and the signal line intersect each other. The gate line includes at least two conductive portions and at least one opening portion on the intersection portion. The at least one opening portion on the gate line is used for removing an etching stopper layer.

Liquid crystal display panel having a gate line with at least one opening

The present invention improves a productivity in growing an a-Si film in a thin film transistor and to obtain an excellent thin film transistor characteristic. More specifically, disclosed is a thin film transistor in which an amorphous silicon film a gate insulating film and a gate electrode are sequentially stacked on an insulating substrate The amorphous silicon film includes a low defect-density amorphous silicon layer formed at a low deposition rate and a high deposition rate amorphous silicon layer formed at a deposition rate higher than that of the low defect-density amorphous silicon layer The low defect-density amorphous silicon layer in the amorphous silicon film is grown closer to the insulating substrate and the high deposition rate amorphous silicon layer is grown closer to the gate insulating film

Growing community of inventors

Shiga-ken, Japan

Osamu Tokuhiro