Canon Kabushiki Kaisha

Fujitsu Corporation

Osamu Taniguchi

Shinjiro Okada

Akira Tsuboyama

Yutaka Inaba

Tadashi Mihara

Yukio Hanyu

Atsushi Mizutome

Yoshihiro Onitsuka

Hiroshi Inoue

Yoshio Hotta

Hironobu Mizuno

Masanobu Asaoka

Katsutoshi Nakamura

Koji Omote

Yasuo Yamagishi

Kazunori Katakura

Yasuto Kodera

Hideyuki Kawagishi

Toshiharu Uchimi

Kazuharu Katagiri

Hideaki Takao

Makoto Kojima

Kenji Onuma

Takatsugu Wada

Mitsuo Iwayama

Junichiro Kanbe

Masahiro Terada

Kazuo Yoshinaga

Kenji Shinjo

Masahiko Enari

Yoshihiko Imanaka

Hitoshi Shindo

Hirofumi Shibata

Takeshi Shioga

Masataka Yamashita

Hiroyuki Kitayama

Isao Watanabe

Kaoru Hashimoto

Keishiro Okamoto

Sunao Mori

Takao Ogura

Masataka Mizukoshi

Tohru Takahashi

Yujiro Ando

Noritaka Ukiyo

Koichi Takasaki

Tomoko Miyashita

A radiation tube includes an enclosure having an opening portion, an electron source disposed inside the enclosure, a target unit configured to generate radiation by being bombarded with electrons emitted from the electron source, and a front shield disposed on the opening portion and joined to the target unit. The front shield has a slit-shaped opening that shields some of the radiation radiated from the target unit. The radiation is radiated through the opening in the shape of a fan beam.

Radiation tube and radiation inspection apparatus

A circuit substrate comprises a glass substrate, through-holesformed through the glass substrateand via electrodesburied in the through-holes. An opening width of the through-holesis minimum inside the glass substrate and is increased toward both surfaces of the glass substrate. Accordingly, the detachment of the via electrodescan be prevented without increasing the surface roughness of the inside walls of the through holes, and stresses generated in the core substrate can be mitigated.

Circuit substrate and method for fabricating the same

A semiconductor apparatus comprises a support substrate having through holes filles with conductor adapted to a first pitch; a capacitor formed on or above said support substrate; a wiring layer formed on or above said support substrate, leading some of said through holes filles with conductor upwards through said capacitor, having branches, and having wires of a second pitch different from said first pitch; and plural semiconductor elements disposed on or above said wiring layer, having terminals adapted to the second pitch, and connected with said wiring layer via said terminals. A semiconductor apparatus, in which semiconductor elements having a narrow terminal pitch, a support having through wires at a wider pitch, and a capacitor are suitably electrically connected to realize the decoupling function with reduced inductance and large capacitance.

Semiconductor system-in-package

The conductive material comprises a first metal material having a melting point of not more than 250&#xb0; C. and a second metal material having a melting point of not less than 500&#xb0; C., and is paste at a temperature not more than 250&#xb0; C. Whereby the conductive material can have much higher conductivity than the resin paste. The conductive material can be used in paste, whereby the conductive material can be buried in the via-hole in the same way as the resin paste.

Conductive material and method for filling via-hole

A circuit substrate including a silicon substrate with through-holes formed therein, conducting films formed on the inside walls of the through-holes, and an organic resin film formed on the surface of at least one side of the silicon substrate and covering at least parts of the through-holes. Accordingly, even in a case where the through-holes formed, micronized at a small pitch, the substrate does not lower the mechanical strength. Thus, a circuit substrate which is applicable to high-density packaging can be provided.

A method of manufacturing an electronic circuit component, including the steps of: (a) forming a first thin film circuit element on a surface of a circuit board made of an Si substrate; (b) forming a hole or trench from the surface of the circuit board through at least a portion of a thickness of the Si substrate by etching; (c) forming an insulating film covering a surface of the formed hole or trench; (d) adhering a dry film of photoresist to the surface of the circuit board, the dry film capping an opening of the hole or trench; (e) patterning the dry film; and (f) by using the patterned dry film as a mask, etching the insulating film. An electronic circuit component having through conductors and being less influenced by high temperature annealing can be manufactured.

Method of manufacturing electronic circuit component

The objective of the present invention is to provide a reliable thin-film circuit substrate or via formed substrate that is provided with minute via plugs at a fine pitch. The objective is served by forming an insulation layer that functions as an etching stopper on a Si substrate, and then via holes are formed in the Si substrate, using a semiconductor process, until the etching stopper layer is exposed. Further, a thin-film circuit is formed on the insulation layer, and the insulation layer is removed at the via holes such that the thin-film circuit is exposed. As necessary, the thin film circuit is heat-treated, and then the via holes are filled with an electrically conductive material and vamp electrodes are formed.

Thin-film circuit substrate

A plasma-addressed liquid crystal display device capable of high-speed drive and improved viewing characteristic is composed of a liquid crystal cell structure and plasma cell structure stacked with each other. The liquid crystal cell structure is formed by sandwiching a liquid crystal having a spontaneous polarization between a first transparent substrate having therein transparent electrode stripes and an alignment film covering the electrode stripes, and a dielectric sheet having thereon an alignment film. The plasma cell structure is formed of a second transparent substrate having thereon cathode stripes and anode stripes disposed alternately with a spacing therebetween, stacked via stripe-shaped partitions disposed along the anode stripes onto the dielectric sheet so as to form plasma channels between the partitions filled with an ionizable gas sealed up therein.

Plasma-addressed liquid crystal display device

Liquid crystal element and liquid crystal apparatus using the same

A liquid crystal apparatus comprises scanning electrodes and data electrodes intersecting with each other to form a pixel at each intersection, and a ferroelectric liquid crystal disposed between the scanning electrodes and data electrodes. The apparatus includes a first unit for applying to the scanning electrodes at least two scanning selection signals in at least two vertical scanning periods; the scanning selection signals having mutually different waveforms and each having a pulse of one or the other voltage polarity with respect to the level of a voltage applied a scanning electrode when it is not selected; and a second unit for applying data pulses to the data electrodes in phase with said pulse of one or the other voltage polarity. The first unit and second unit in combination apply a fore voltage pulse to a pixel on a scanning electrode selected by application of the pulse of one or the other voltage polarity prior to each application of a writing voltage formed by combination of the pulse of one or the other polarity and an information pulse. The fore voltage pulse has a polarity opposite to that of the writing voltage and an amplitude which is 1/2 or less of that of the writing voltage.

Liquid crystal apparatus

Based on temperature data from temperature detection means, the temperature of a liquid crystal device is judged to be present in which of prescribed plural temperature regions. Based on the judgment, in each temperature region, a drive voltage generation means is controlled to generate a constant drive voltage which is different from that in another region, and a drive signal generation means is controlled to generate a drive signal having a pulse width which varies depending on the temperature of the liquid crystal device. A liquid crystal disposed between a pair of substrates of the liquid crystal device is driven by application of the constant drive voltage for the pulse width of the drive signal. The drive system allows a sufficient temperature compensation by a relatively simple apparatus organization.

Liquid crystal apparatus and driving method therefor

Growing community of inventors

Chigasaki, Japan

Osamu Taniguchi