Dainippon Screen Mfg. Co., Ltd.

Screen Holdings Co., Ltd.

Sokudo Co., Ltd.

Osamu Tamada

Masakazu Sanada

Shuichi Yasuda

Kazuhito Shigemori

Tomohiro Goto

Masahiko Harumoto

Tsuyoshi Mitsuhashi

Tadashi Miyagi

Kenji Sugimoto

Minobu Matsunaga

Katsushi Yoshioka

Satoshi Yamamoto

Kaoru Aoki

Mitsumasa Kodama

Akiko Tanaka

Moritaka Yano

Takashi Nagao

Kayoko Nakano

A method and apparatus capable of eliminating occurrence of a development failure when a DI water discharge nozzleis scanned to dry a substrate by spinning. A substrate is held in a horizontal posture by a spin chuck and rotated about a vertical axis by a rotation motor, and when an outlet of the nozzle is scanned from a position opposed to a center of the substrate W to a position opposed to a circumferential edge while a cleaning solution being discharged, immediately after the nozzle has started to move, only one dried core is produced in the vicinity of the center of the substrate, and thus production of not less than two dried cores in the vicinity of the center of the substrate is prevented. The dried region is spread all over the surface of the substrate.

Substrate processing apparatus

A method capable of eliminating occurrence of a development failure when a DI water discharge nozzleis scanned to dry a substrate by spinning is provided. A substrate W is held in a horizontal posture by a spin chuckand rotated about a vertical axis by a rotation motor, and when an outlet of the nozzleis scanned from a position opposed to a center of the substrate W to a position opposed to a circumferential edge while a cleaning solution being discharged, immediately after the nozzlehas started to move, only one dried core is produced in the vicinity of the center of the substrate W, and thus production of not less than two dried cores in the vicinity of the center of the substrate W is prevented. The dried region is spread all over the surface of the substrate W.

Substrate processing method and substrate processing apparatus

A thermal processing unit of a thermal processor for anti-reflection films includes: a covering nozzle for covering a substrate from above supported by a thermal processing plate and discharging an adhesion enhancing agent to a periphery of a substrate supported by the thermal processing plate; and a vaporization processor for supplying an adhesion enhancing agent in the vapor phase to the covering nozzle. While a substrate placed over the thermal processing plate is being subjected to thermal process, a control part causes the covering nozzle to discharge an adhesion enhancing agent in the vapor phase onto a periphery of a substrate to realize adhesion enhancement process. Thus, the adhesion between a resist coating film and a substrate surface in the periphery of a substrate is enhanced. Further, parallel implementation of thermal process and adhesion enhancement process exerts no influence on throughput.

A coating device includes a box-shaped processing chamber. Slits are respectively provided on four side surfaces of the processing chamber. A box-shaped housing is provided so as to surround the processing chamber. A space is formed between the processing chamber and the housing. A fan filter unit for forming downflow in the space is provided on the top of the housing. Air supplied to the fan filter unit is cleaned by the fan filter unit, and is supplied to the space. The air supplied to the space is supplied to the processing chamber through each of the slits in the processing chamber. This causes a twister-shaped air current to be generated within the processing chamber.

A substrate treating apparatus is provided for eliminating wasteful consumption of a treating solution in a treating mode in which the treating solution is delivered in a strip form to a substrate from a treating solution delivery nozzle sweeping over the substrate. In a first aspect of the invention, collecting vessels are arranged around a developing cup surrounding a wafer supported by a wafer holder. The collecting vessels collect part of a developer delivered from a discharge opening of a developer delivery nozzle outwardly of a surface of the wafer. In a second aspect of the invention, collecting vessels are arranged below a developer delivery nozzle, with collecting openings of the collecting vessels opposed to a discharge opening or openings of the delivery nozzle. The collecting vessels are moved longitudinally of the discharge openings according to a position of the developer delivery nozzle relative to the wafer.

Substrate treating method and apparatus

A developer is supplied onto a substrate and thereafter a rinse discharge nozzle is moved toward an operating direction. The rinse discharge nozzle is so moved on the substrate as to continuously supply pure water onto the substrate from a slit discharge port of the rinse discharge nozzle while sucking and recovering the pure water from the surface of the substrate through a slit suction port, and a series of development is performed in a stationary state of the substrate.

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Kyoto, Japan

Osamu Tamada