Tdk Corporation

Mitsubishi Denki Kabushiki Kaisha

Osamu Taguchi

Hiroyuki Sato

Goro Takeuchi

Ryuichi Tanaka

Hitoshi Tanaka

Yo Saito

Makoto Numata

Toshio Tomonari

Takayuki Nagai

Noritaka Chiyo

Hirohumi Asou

Yoshio Kubo

Tomohiro Arashi

Tomohiro Moriki

Tomoaki Kawata

Kunihiko Egawa

Shigeki Ohtsuka

Takahiro Ohishi

Takakazu Maruyama

Takaaki Imai

Mitsuyuki Imaizumi

Masayoshi Wake

Junpei Hamaya

Disclosed herein is a coil component that includes first and second substrates, a first coil pattern formed on one surface of the first substrate, a second coil pattern formed on one surface of the second substrate, a first terminal electrode connected to one end of the first coil pattern and protruding from the first substrate, and a second terminal electrode connected to one end of the second coil pattern and protruding from the second substrate. The first and second substrates are laminated such that the first and second terminal electrodes overlap each other and are connected to each other.

Coil component and wireless power transmission device provided with the same

A dielectric ceramic composition is represented by a general formula 'xBiO.yZnO.(z-a)NbO.aVO'. The variables, 'x', &#x201c;y&#x201d;, &#x201c;z&#x201d; and &#x201c;a&#x201d; in the general formula respectively satisfy the following conditions: 2.90&#x2266;x&#x2266;3.10, 1.90&#x2266;y&#x2266;2.10, 1.90&#x2266;z&#x2266;2.10, and 0.0005&#x2266;a&#x2266;0.020.

[object Object]

A multilayer chip varistor is provided as one capable of suppressing production of cracks and thereby preventing a connection failure between an internal electrode and a through-hole conductor. An internal electrodeis so configured as to be curved toward a direction of penetration of a through holein a connection portionthereof to a through-hole conductor. By this configuration, a region T sandwiched between a curved surfaceof the connection portionand the through-hole conductoris formed in a varistor layernear the connection portion. In this region T, a metal concentration thereof becomes higher because of diffusion of metal of the internal electrodeand the through-hole conductorinto the varistor layer, and therefore, after completion of firing, the region T has an intermediate contraction percentage between that of the internal electrodeand through-hole conductorand that of the other region of the varistor layer. This permits the region T to relax stress near the connection portionwhere the internal electrode, through-hole conductor, and varistor layerare congested so as to readily produce cracks.

Multilayer chip varistor

A varistor having a favorable heat-dissipating property is provided. In the varistor, a composite part having a favorable heat-dissipating property formed by a composite material composed of ZnO and Ag is arranged between main faces of a varistor matrix. Therefore, the heat transmitted from a semiconductor light-emitting device to a varistor part through an outer electrode can rapidly be transferred toward a main face on the opposite side through the composite part. In this varistor, side faces excluding inner side faces are exposed at side faces of the varistor matrix. Such a structure yields a favorable heat-dissipating property.

Varistor

A first varistor section includes a first face of an element body, and a third face facing the first face. The first varistor section has a first varistor element body, a first varistor electrode electrically connected to a first external electrode, and a second varistor electrode electrically connected to a second external electrode. A heat radiation section has a first heat radiation portion kept in contact with the third face of the first varistor section and electrically connected to the first and third external electrodes, a second heat radiation portion kept in contact with the third face of the first varistor section and electrically connected to the second and fourth external electrodes, and an insulating layer located between the first heat radiation portion and the second heat radiation portion and electrically insulating the first heat radiation portion and the second heat radiation portion from each other. The first heat radiation portion and the second heat radiation portion contain a metal.

A multilayer chip varistor is provided as one having excellent heat radiation performance. A thickness between a first principal faceand an outermost internal electrode layerA is smaller than a thickness between an internal electrode layerand the outermost internal electrode layerA, and because of this configuration, heat generated from a bottom face of a semiconductor light emitting device LEis efficiently transferred to the outermost internal electrode layerA having a high thermal conductivity. Furthermore, in the multilayer chip varistor Vof an electronic component EC, the outermost internal electrode layerA has a first internal electrodeelectrically connected to a first connection electrodeand a first terminal electrodethrough first through-hole conductors, and a second internal electrodeelectrically connected to a second connection electrodeand a second terminal electrodethrough second through-hole conductors. Because of this configuration, heat H generated from the semiconductor light emitting device LEis transferred to both the first internal electrodeand the second internal electrode, so as to be transferred to the first through-hole conductorsand the second through-hole conductors. This leads to well-balanced transfer of heat to the first through-hole conductorsand the second through-hole conductors

Multilayer chip varistor and electronic component

A method for manufacturing a Sn-based alloy containing a finely dispersed Sn&mdash;Ti compound includes melting Sn by heating to a temperature in a range from 1300 to 1500&deg; C. in vacuum or an inert gas atmosphere, adding 0.1 to 5% by weight of Ti followed by melting by heating, and casting the molten alloy into a copper mold directly or through a pouring cup. The Sn-based alloy obtained by this method contains the Sn&mdash;Ti compound having a maximum particle diameter of 30 &mgr;m and a mean particle diameter of 5 to 20 &mgr;m. A precursor of a Nb Sn wire is also obtained by an inner diffusion method using this Sn-based alloy. The Nb Sn wire manufactured by using the Sn-based alloy of the present invention exhibits excellent superconductive characteristics. The method of the present invention enables the ingot to be free from a shrinkage cavity appearing during prior art manufacturing processes.

Sn based alloy containing Sn&mdash;Ti compound, and precursor of Nb3SN superconducting wire

A superconductor comprises two superconducting wires butt-jointed, a superconducting doubling wire electrically and mechanically connecting the superconducting wires, and a stabilizer attached to the superconductors and the doubling wire to extend therealong, the superconductors, the doubling wire and the stabilizer together forming a superconductor of a constant cross-sectional area. A manufacturing process is also disclosed.

Superconductor

Growing community of inventors

Tokyo, Japan

Osamu Taguchi