Sumitomo Electric Industries, Limited

A.l.m.t. Corporation

Osamu Suwata

Masatoshi Majima

Koji Nitta

Shinji Inazawa

Yoshinobu Takeda

Chihiro Kawai

Yugaku Abe

Akira Fukui

Shin-ichi Yamagata

Shinichi Yamagata

Hiroshi Yokoyama

Akihisa Hosoe

There is provided a metal laminated structure comprising a first metal layer, a second metal layer and a third metal layer, the first metal layer being disposed on one surface of the second metal layer, the third metal layer being disposed on the other surface of the second metal layer, the first metal layer including at least one of tungsten and molybdenum, the second metal layer including copper, the third metal layer including at least one of tungsten and molybdenum, and a method for producing the metal laminated structure.

Metal laminated structure and method for producing the metal laminated structure

There is provided a metal laminated structure in which a first metal layer containing tungsten is provided on a first surface of a second metal layer containing copper and a third metal layer containing tungsten is provided on a second surface of the second metal layer opposite to the first surface, and the first metal layer contains crystal grains of tungsten in a form of a columnar crystal extending in a direction perpendicular to the first surface of the second metal layer and the third metal layer contains crystal grains of tungsten in a form of a columnar crystal extending in a direction perpendicular to the second surface of the second metal layer, and a method for producing the metal laminated structure.

Metal laminated structure and method for producing the same

A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger than that in the inside thereof, and the ratio of aluminum or the aluminum alloy to silicon carbide is the same in the surface and the inside. The member is produced by mixing powdery materials of aluminum or an aluminum alloy and silicon carbide, compacting the mixed powder, and sintering the compact in a non-oxidizing atmosphere containing nitrogen gas, at a temperature between 600&deg; C. and the melting point of aluminum. The member is lightweight and has high thermal conductivity as well as thermal expansion coefficient which is well matches with that of ceramics and others. Therefore, the member is especially favorable to high-power devices.

Member for semiconductor device and method for producing the same

A member for semiconductor devices comprising a composite alloy of aluminum or an aluminum alloy and silicon carbide, wherein silicon carbide grains are dispersed in aluminum or the aluminum alloy in an amount of from 10 to 70% by weight, the amount of nitrogen in the surface of the member is larger than that in the inside thereof, and the ratio of aluminum or the aluminum alloy to silicon carbide is the same in the surface and the inside. The member is produced by mixing powdery materials of aluminum or an aluminum alloy and silicon carbide, compacting the mixed powder, and sintering the compact in a non-oxidizing atmosphere containing nitrogen gas, at a temperature between 600.degree. C. and the melting point of aluminum. The member is lightweight and has high thermal conductivity as well as thermal expansion coefficient which is well matches with that of ceramics and others. Therefore, the member is especially favorable to high-power devices.

Aluminum base member for semiconductor device containing a nitrogen rich

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Sakata, Japan

Osamu Suwata