Bridgestone Corporation

Osamu Shiino

Masato Yoshikawa

Koji Takagi

Shinichi Toyosawa

Yasuo Horikawa

Shigeki Endo

Taichi Kobayashi

Ryo Sakurai

Yoshinori Iwabuchi

Shingo Ohno

Hideo Sugiyama

Takayuki Sugimura

Shingo Ono

Mari Miyano

Tatsuya Funaki

Seiichi Sato

An object and project of the present invention is to provide a method for producing silicon fine particles and a method for controlling a particle diameter of silicon fine particles which enable efficient production of silicon fine particles having a uniform particle diameter. A the characteristics of the present invention is producing silicon fine particles having a smaller particle diameter than silicon particles and controlling a particle diameter of silicon fine particles by immersing the silicon particles into an etching solution and irradiating the silicon particles immersed in the etching solution with light having a larger energy than a band gap energy of the silicon particles.

Method for producing silicon fine particles and method for controlling particle diameter of silicon fine particles

In the particles for display media used for an information display panel, in which at least one group of display media are sealed between two opposed substrates, at least one of two substrates being transparent, and, in which the display media, to which an electrostatic field is applied, are made to move so as to display information such as an image, a material having electric properties of a semiconductor is provided on a surface of the particles. According to the invention, since use is made of the particle whose surface has electric properties of a semiconductor, it is possible to maintain stably a surface charge of the particle for display media. As a result, it is possible to obtain an information display panel having a stable information display state such as an image.

Particles for display medium and information display panel using same

In a thin-film transistor comprising respective elements of: three electrodes of a source electrode, a drain electrode and a gate electrode; a channel layer; and a gate insulating film, at least the channel layer is formed by a metal oxide film including indium. Therefore, it is possible to obtain the thin-film transistor, which can manufacture an element to a polymer substrate without using a high temperature process and which can achieve a high performance and a high reliability at low cost.

Thin-film transistor with channel layer formed by metal oxide film including indium, and method of manufacturing the same

Growing community of inventors

Kiyose, Japan

Osamu Shiino