Mitsubishi Denki Kabushiki Kaisha

Ihi Corporation

Ihi Machinery and Furnace Co., Ltd.

Asahi Glass Company, Limited

Renesas Technology Corp.

Taisei Corporation

Osamu Sakamoto

Kazuhiko Katsumata

Takahiro Nagata

Masatoshi Mitsuzuka

Seiji Miyazaki

Chikao Tanaka

Satoru Ohkawa

Satoshi Shimizu

Natsuo Ajika

Takahiro Murakami

Kiyoteru Kobayashi

Naoki Tsuji

Takuma Yoshida

Takahiro Nakayama

Ichiro Nakamoto

Takuo Osuka

Yasuhiko Tsuruta

Yasuo Tsukamoto

Haruo Sasaki

Kiyoshi Kudo

The multi-chamber heat treatment device includes intermediate conveyors connected together, each treatment conveyor of the intermediate conveyors is attached with a treater that applies predetermined heat treatment to a treatment object and conveys the treatment object to the treater, and each treater is either one of a main treater that applies main treatment to the treatment object, a preheater that applies preheating treatment to the treatment object before the main treatment, and a cooler that applies cooling treatment to the treatment object after the main treatment.

Multi-chamber heat treatment device

The present disclosure provides a drying chamber (condenser) including a container having a steam intake opening, the condenser liquefying steam taken from the steam intake opening into the container, and the drying chamber including a cooling pipe which is disposed in the container and through which coolant circulates.

Condenser and cleaning device

A carburizing device includes a furnace body that performs heat treatment on a treatment object to perform carburization treatment on the treatment object, in which: a heater configured to perform heat treatment on the treatment object is provided upright in a vertical direction within the furnace body; a gas supply section configured to supply a gas for burnout toward the heater is provided at a lower end part of the heater; the heater is inserted through a protective tube provided upright in the vertical direction; and the gas supply section is configured to supply the gas for burnout to between the protective tube and the heater.

Carburizing device

A cleaning apparatus includes: a cleaning chamber that accommodates an object to be cleaned; a drying chamber connected to the cleaning chamber; a connecting member connecting a first opening provided in the cleaning chamber and a second opening provided in the drying chamber; a valve element positioned inside the cleaning chamber and facing the first opening; a valve seat facing the valve element; and an actuator that drives the valve element.

Cleaning apparatus

A carburizing device is configured to perform a carburizing treatment on a treatment target, and includes a furnace body, an insulating container provided inside the furnace body, a furnace bed provided inside the insulating container and on which the treatment target is mounted, and a heat source provided inside the insulating container, in which at least surfaces of main components of the furnace bed, the heat source and the insulating container are made of a ceramic material.

A glass-melting furnace, which suppresses the effect of exhaust gas on molten glass quality, a process for producing molten glass, and a process and apparatus for producing glass products. The glass-melting furnace containing: a raw glass material particle feed portion disposed downwardly at a furnace wall portion in an upper portion of the glass-melting furnace; a heating unit provided under the feed portion, which forms a gas phase portion for converting raw glass material particles into liquid glass particles; a flue inlet disposed on the upstream side of the gas phase portion in a flow direction of the molten glass liquid; a furnace-bottom portion, which accumulates the liquid glass particles that produce the molten glass liquid; and a discharge portion, which discharges the molten glass liquid.

Glass-melting furnace, process for producing molten glass, apparatus for producing glass products and process for producing glass products

The present invention provides a process for producing a molten glass which can produce a molten glass having a good quality, a glass-melting furnace, a process for producing glass products and an apparatus for producing glass products. While an oxygen combustion burneris rotated by a motor, glass raw material particles (not shown) are dropped into a high-temperature gas phase atmosphere produced by a flame F of the oxygen combustion burner, to be changed into liquid glass particles. By rotation of an outlet (nozzle) of the oxygen combustion burner, the falling position of the liquid glass particles, changes with time. Accordingly, generation of bubbles caused by continuous fall of the liquid glass particles in a particular position on a molten glass liquid surface is prevented. Accordingly, it is possible to produce a molten glass having a good quality with few bubbles.

Process for producing molten glass, glass-melting furnace, process for producing glass products and apparatus for producing glass products

Glass raw material particles are dropped from an oxygen combustion burner, and the glass raw material particles are heated by a flame F of an oxygen combustion burnerand a thermal plasma P, to melt the particles. Liquid glass particlesproduced by the melting fall downwardly in a melting tank, and fall on a surface of a molten glass liquid G in the melting tank. Then, an upper layer Gof the molten glass liquid G is heated by electrodesof a heating apparatusprovided in the melting tank. By this method, air and residual gas generated in the molten glass liquid G and the liquid glass particlesfallen onto the surface of the molten glass liquid G, become bubbles, surface and are smoothly discharged.

The non-volatile semiconductor memory device includes: a semiconductor substrate having a main surface; N diffusion layers formed spaced from each other at the main surface of the semiconductor substrate; a floating gate formed on a region between the N diffusion layers with a silicon oxide film interposed; an access gate formed adjacent to the floating gate on the region between N diffusion layers with a silicon oxide film interposed; and a control gate formed on the floating gate with an interlayer insulating film interposed. The N diffusion layer is provided between the floating gates, and another N diffusion layer is provided between the access gates. Thus performance of a memory transistor in a non-volatile semiconductor memory device is improved, reliability of the device is improved and miniaturization of the device is facilitated.

Non-volatile semiconductor memory device with improved performance

A method for producing a non-volatile semiconductor memory device, comprising the steps of providing a semiconductor substrate having a surface; forming trench isolations on the substrate, the trench isolations being projected from the surface; forming source and drain regions between the neighboring trench isolations, so that the source and drain regions are faced each other across a channel region; and forming a floating gate electrode on the channel region through a tunnel film which is formed on the channel region.

Method for producing non-violatile semiconductor memory device and the device

A nonvolatile semiconductor memory device with trench isolation having sufficient capability of isolating memory cells is provided. A trench formed as a line in the main surface of semiconductor substrate is filled with a first insulating film. On semiconductor substrate on both sides of trench, a first gate electrode is provided with a first oxide film interposed. On the first gate electrode, a second gate electrode is provided with a second insulating film interposed. An angle formed by a side wall upper surface of trench and the surface of semiconductor substrate is smaller than 90.degree..

Nonvolatile semiconductor memory device using trench isolation and

A silicon layer in a lower layer and an interconnection layer arranged in an upper layer are electrically connected through an opening for contact. A silicon plug layer having the same conductivity type as that of the silicon layer is embedded in the opening. The silicon plug layer is embedded in the opening by an etch back method after deposited using a CVD method. The interconnection layer in the upper layer has conductivity type different from that of the silicon plug layer. A refractory metal silicide layer is formed between the upper interconnection layer and the silicon plug layer. The refractory metal silicide layer prevents pn junction from being formed between the upper interconnection layer and the silicon plug layer.

Method of manufacturing a contact structure of an interconnection layer

Contact structure of an interconnection layer for a semiconductor device

A semiconductor device includes a polycrystalline silicon layer formed on a silicon layer with an oxide film therebetween, an interlayer insulating layer formed to cover the surface of the silicon layer and the surface of the polycrystalline silicon layer, and a silicon plug layer formed in an embedded manner in a contact hole in the interlayer insulating layer to be directly connected to the surface of an end portion of the polycrystalline silicon layer and the surface of the silicon layer in the proximity of the end portion of the polycrystalline silicon layer. The polycrystalline silicon layer and the silicon plug layer have the same type of conductivity. By this interconnection structure, the semiconductor device is improved in the patterning accuracy of the contact portion of a multilayer stacked interconnection. Furthermore, an ohmic contact between conductive interconnection layers can be realized with relatively simple manufacturing steps without occurrence of a voltage drop caused by a pn junction.

Growing community of inventors

Tokyo, Japan

Osamu Sakamoto