Fujitsu Corporation

Fujitsu Vlsi Limited

Osamu Nomura

Yasuhiko Maki

Shigeaki Okutani

Toshiharu Kawanishi

Tetsuro Nagashima

Takashi Iino

Chikai Ono

Michiyuki Hirata

Toru Fukui

Susumu Terawaki

Fujitsu Limited

When the number of pieces of data which are operated on by an operation unit per unit time is N times the number of pieces of data entered into a data entry section per unit time and the operation unit performs an operation on a data set consisting of K samples of data, the data set extraction starting positions on a data string entered into the data entry section are shifted by K/N samples. Each of data sets thus extracted from the data string is sent to the operation unit to be operated on. This configuration permits the precision of operations by the operation unit to be improved according to the ratio K/N without reducing the operation efficiency of the operation unit.

Variable-rate data entry control device and control method

Herein disclosed is an information processing apparatus having a synchronous storage and the synchronous storage which can resume an operation continuing from before an interruption without hindrance even after a series of read/write operations have been interrupted and a read/write of internal condition values has been performed in a scanning operation or the like. The information processing apparatus successively selects information stored in address backup registers in two stages and data backup registers in two stages and outputs the selected information to the synchronous storage when a normal operation is resumed, thereby restoring an address data register, a data input register and a data output register to the same conditions as before the interruption of the normal operation. This invention is applicable to a synchronous storage accessible in synchronism with a system clock and an information processing apparatus having such synchronous storage.

Information processing apparatus including synchronous storage having

A level conversion circuit includes a level converter and a buffer gate circuit. A level converter includes two pairs of P-channel MOS transistors. A first input signal is supplied to one of the pair of P-channel MOS transistors and a second input signal is supplied to one of the other pair of P-channel MOS transistors. Each of the first and second input signals are complementary ECL-level signals. The buffer gate circuit includes two BiCMOS circuits. A first output signal from one of the pairs of P-channel MOS transistors is supplied to a gate of an N-channel MOS transistor provided in one of the BiCMOS circuits. A second output signal from the other pair of P-channel MOS transistors is supplied to a gate of an N-channel MOS transistor provided in the other BiCMOS circuit. The first input signal is supplied directly to a gate of a P-channel MOS transistor provided in one the BiCMOS circuits. The second input signal is supplied directly to a gate of a P-channel MOS transistor provided in the other BiCMOS circuit. A first TTL-level output signal is output from one of the circuits, and a second TTL-level output signal is output from the other BiCMOS circuit.

Level conversion circuit for converting ECL-level signal into TTL-level

A logic circuit improves a marginal voltage of a p-channel metal oxide semiconductor (MOS) transistor which is driven through a bipolar complementary metal oxide semiconductor (CMOS) gate. The logic circuit has a bipolar CMOS gate having a CMOS gate and output stage bipolar transistors for receiving an input signal through the CMOS gate, where the CMOS gate and the output stage bipolar transistors are driven by first and second power source voltages. The first power source voltage is higher than the second power source voltage and the output stage bipolar transistors output a signal as an output signal of the bipolar CMOS gate. A p-channel MOS transistor has a gate supplied with the output signal of the bipolar CMOS gate, a source supplied with a third power source voltage, and a drain from which an output signal of the logic circuit is outputted. The third power source voltage is a predetermined value lower than the first power source voltage and higher than the second power source voltage. As a result the turning OFF of the p-channel MOS transistor is guaranteed due to the improved marginal voltage.

Logic circuit using bipolar complementary metal oxide semiconductor gate

A logic circuit improves a marginal voltage of a p-channel metal oxide semiconductor (MOS) transistor which is driven through a bipolar complementary metal oxide semiconductor (CMOS) gate. The logic circuit has a bipolar CMOS gate having a CMOS gate and output stage bipolar transistors for receiving an input signal through the CMOS gate, where the CMOS gate and the output stage bipolar transistors are driven by first and second power source voltages. The first power source voltage is higher than the second power source voltage and the output stage bipolar transistors output a signal as an output signal of the bipolar CMOS gate. A p-channel MOS transistor has a gate supplied with the output signal of the bipolar CMOS gate, a source supplied with a third power source voltage, and a drain from which an output signal of the logic circuit is outputted. The third power source voltage is a predetermined value lower than the first power source voltage and higher than the second power source voltage. As a result, the turning OFF of the p-channel MOS transistor is guaranteed due to the improved marginal voltage.

Growing community of inventors

Kasugai, Japan

Osamu Nomura