Oki Electric Industry Co., Ltd.

Fuji Jukogyo Kabushiki Kaisha

Osamu Nanba

Kazuya Suzuki

Hiroaki Uchida

Sou Tamiya

Atsushi Kochi

Yoshiki Nagatomo

Syuji Ozawa

Shoji Yo

Lorenz Bittner

Passenger car

A first insulating layer is formed on semiconductor substrate, and a trench is formed in the first insulating layer. An amorphous silicon layer doped with impurities is formed on a side and bottom walls of the trench. Next, a resist material is partially filled in the trench so that an upper portion of the amorphous silicon layer is exposed. The exposed portion is implanted with impurity ions. After removal of the resist material, the amorphous silicon layer is heat treated so as to grow hemispherical grains on its surface.

Method of Fabricating a capacitor structure having hemispherical grains

A semiconductor device in which an integrated circuit is formed includes a resistance-measurement area with conductive members disposed in at least two different layers, and an electrode pattern. The electrode pattern includes contact plugs that, depending on their alignment, make electrical contact with different conductive members. Contact alignment error is measured by measuring the electrical resistance between a pair of electrodes in the electrode pattern.

Method of measuring contact alignment in a semiconductor device including an integrated circuit

Semiconductor device permitting electrical measurement of contact alignment error

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Tokyo, Japan

Osamu Nanba