Asahi Kasei Microdevices Corporation

Osamu Morohara

Hiromi Fujita

Hirotaka Geka

Yoshiki Sakurai

Daiki Yasuda

Disclosed is an infrared detecting device with a high SNR. The infrared detecting device includes a semiconductor substrate; a first layer formed on the semiconductor substrate and having a first conductivity type; a light receiving layer formed on the first layer; and a second layer formed on the light receiving layer and having a second conductivity type. The first layer includes, in the stated order: a layer containing AlInSb; a layer having a film thickness tin nanometers and containing AlInSb; and a layer containing AlInSb, where t, x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0<t≤2360×(y(1)−x(j))−240 (0.11≤y(1)−x(j)≤0.19), 0<t≤−1215×(y(1)−x(j))+427 (0.19<y(1)−x(j)≤0.33), and 0<x(j)<0.18.

Infrared detecting device

Provided is a high-performance infrared optical device including a reflecting layer structure that can be widely used in the mid-infrared region. An infrared optical device that has a light emission/reception property of having a peak at a center wavelength λ comprises: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer formed on the semiconductor substrate, a lower semiconductor layer of a first conductivity type, a light emitting/receiving layer, an upper semiconductor layer of a second conductivity type, and a second reflecting layer in the stated order, wherein the first reflecting layer has a constituent material made of AlGaInAsSb where 0≤Al+Ga≤0.5 and 0≤As≤1.0, and includes a plurality of layers that differ in impurity concentration, and the center wavelength λ is 2.5 μm or more at room temperature.

Infrared optical device

An infrared detecting device is provided. The infrared detecting device includes: a semiconductor substrate; a first layer having a first conductivity type on the semiconductor substrate; a light receiving layer on the first layer; and a second layer having a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure. The second layer contains AlInSb (0.05<z<0.18). The side surfaces and an upper surface of the mesa structure are covered with the protective layer. A part of an upper surface of the second layer that forms an interface between the second layer and the protective layer has an oxide layer made of a constituent material of the second layer. The oxide layer includes an oxide of Al and has no oxide of Sb.

Disclosed is an infrared detecting device with a high SNR. The infrared detecting deviceincludes a semiconductor substrate; a first layerformed on the semiconductor substrate and having a first conductivity type; a light receiving layerformed on the first layer; and a second layerformed on the light receiving layer and having a second conductivity type. The first layer includes, in the stated order: a layer containing AlInSb; a layer having a film thickness tin nanometers and containing AlInSb; and a layer containing AlInSb, where t, x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0<t≤2360×(y(1)−x(j))−240 (0.11≤y(1)−x(j)≤0.19), 0<t≤−1215×(y(1)−x(j))+427 (0.19<y(1)−x(j)≤0.33), and 0<x(j)<0.18.

Provided is an infrared detecting device with a high SNR. The infrared detecting device includes: a semiconductor substrate; a first layerhaving a first conductivity type on the semiconductor substrate; a light receiving layeron the first layer; and a second layerhaving a second conductivity type on the light receiving layer. A part of the first layer, the light receiving layer, and the second layer form a mesa structure, the light receiving layer contains AlInSb (0.05&#x3c;x&#x3c;0.18), and at least a part of side surfaces of the mesa structure are covered with a protective layer, and part of the protective layer that is in contact with side surfaces of the light receiving layer is made of silicon nitride.

Provided is an infrared light emitting device with high emission intensity. The infrared light emitting device includes: a semiconductor substrate; a first compound semiconductor layer; a light emitting layer containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).

Infrared light emitting device having light emitting layer containing Al, In, and Sb

Provided is an infrared detecting device with high SNR. The infrared detecting device includes: a semiconductor substrate; a first compound semiconductor layer; a light receiving layer formed on the first compound semiconductor layer and containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).

Disclosed is an infrared light emitting device including: a semiconductor substrate; a first layer formed on the semiconductor substrate and having a first conductivity type; a light emitting layer formed on the first layer; and a second layer formed on the light emitting layer and having a second conductivity type, wherein the first layer includes, in the stated order: a layer containing AlInSb; a layer having a film thickness tin nanometers and containing AlInSb; and a layer containing AlInSb, where t, x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0&#x3c;t&#x2264;2360&#xd7;(y(1)&#x2212;x(j))&#x2212;240 (0.11&#x2264;y(1)&#x2212;x(j)&#x2264;0.19), 0&#x3c;t&#x2264;&#x2212;1215&#xd7;(y(1)&#x2212;x(j))+427 (0.19&#x3c;y(1)&#x2212;x(j)&#x2264;0.33), and 0&#x3c;x(j)&#x3c;0.18.

Growing community of inventors

Tokyo, Japan

Osamu Morohara