Other

Sony Corporation

Osamu Matsumoto

Osamu Goto

Shinichi Ansai

Masao Ikeda

Tomonori Hino

Tsuyoshi Tojo

Motonobu Takeya

Tsuyoshi Fujimoto

Satoru Kijima

Yoshifumi Yabuki

Yoshio Oofuji

Tomomi Sasaki

An apparatus constructed in a simple structure and capable of generating fine air bubbles and includes an apparatus body having a circular column-like internal space defined by a cylindrical inner surface and circular inner surfaces. At least one internal cylindrical member can be disposed within the internal space away from the cylindrical inner surface. A first fluid introduction section can inject a first fluid into a tubular space between the cylindrical inner surface and the internal cylindrical member toward a circumferential direction. A second fluid introduction section and a gas and liquid mixture discharge port can be disposed in the circular inner surfaces, respectively.

Gas and liquid mixture generation apparatus

Provided is a GaN-based semiconductor light emitting device formed on a GaN single-crystal substrate and having a configuration capable of reducing a current leak. A GaN-based semiconductor laser device () is disclosed as an example of the GaN-based semiconductor light emitting device, and it is a semiconductor laser device having a structure such that a p-side electrode and an n-side electrode are provided on a multilayer structure of GaN-based compound semiconductor layers. The GaN-based semiconductor laser device () is similar in configuration to a conventional GaN-based semiconductor laser device formed on a sapphire substrate except that a GaN single-crystal substrate () is used in place of the sapphire substrate and that the multilayer structure is directly formed on the GaN single-crystal substrate () without providing a GaN-ELO structure layer. The GaN single-crystal substrate () has continuous belt-shaped core portions () each having a width of 10 &#x3bc;m. These core portions () are spaced apart from each other by a distance of about 400 &#x3bc;m. A laser stripe (), a pad metal () for the p-side electrode (), and the n-side electrode () are provided on the multilayer structure in a region except the core portions () of the GaN single-crystal substrate (). The horizontal distance Sp between the pad metal () and the core portion () adjacent thereto is 95 &#x3bc;m, and the horizontal distance Sn between the n-side electrode () and the core portion () adjacent thereto is also 95 &#x3bc;m.

Gan semiconductor device

In a multi-beam semiconductor laser including nitride III&#x2013;V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III&#x2013;V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device

A method of fabricating a nitride semiconductor includes the steps of forming a nitride semiconductor doped with a p-type impurity, treating the surface of the nitride semiconductor in an atmosphere containing active oxygen to remove carbon remaining on the surface and form an oxide film thereon, and activating the p-type impurity to turn the conductive type of the nitride semiconductor into a p-type. Since carbon remaining on the surface of the nitride semiconductor is removed and the oxide film is formed thereon, the surface of the nitride semiconductor is prevented from being deteriorated by the activating treatment and the rate of activating the p-type impurity is enhanced. As a result, it is possible to reduce the contact resistance of the nitride semiconductor with an electrode and, hence, the variation in characteristics of the nitride semiconductor.

Method of fabricating nitride semiconductor and method of fabricating semiconductor device

Growing community of inventors

Miyagi, Japan

Osamu Matsumoto