Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Osamu Maeda

Takahiro Arakida

Masaki Shiozaki

Yuji Masui

Susumu Sato

Rintaro Koda

Yoshinori Yamauchi

Katsuhisa Daio

Norihiko Yamaguchi

Shiro Uchida

Naoki Jogan

Takehiro Taniguchi

Koichi Kobe

Masashi Nakamura

Tomoyuki Oki

Hirofumi Nakano

Jugo Mitomo

Motoi Kimura

Motonobu Takeya

Takayuki Kawasumi

Tsuyoshi Fujimoto

Terukazu Naruse

Takeshi Yuwaki

Kota Tokuda

Shota Watanabe

Yasutaka Higa

Yuji Furushima

Shinichi Agatuma

Toshihiro Hashidu

Yoshio Oofuji

Satoru Fushimi

The present technology provides a surface emitting laser capable of suppressing a decrease in luminous efficiency. The present technology provides a surface emitting laser including: first and second multilayer film reflectors; a plurality of active layers laminated together between the first and second multilayer film reflectors; a tunnel junction disposed between two active layers adjacent to each other in a lamination direction among the plurality of active layers; and an oxide confinement layer disposed between one active layer of the two adjacent active layers and the tunnel junction. According to the present technology, it is possible to provide a surface emitting laser capable of suppressing a decrease in luminous efficiency.

Surface emitting laser, electronic device, and method for manufacturing surface emitting laser

A surface emission laser driving method according to an embodiment of the present technology includes the following two steps. (A) Generating drive pulses to be sequentially outputted to, out of a plurality of surface emission lasers disposed on a same substrate, each of the surface emission lasers selected as light-emission targets, on the basis of the number of surface emission lasers selected as the light-emission targets and a monitoring temperature that is immediately prior to light emission of each of the surface emission lasers selected as the light-emission targets. (B) Outputting the generated drive pulses to each of the surface emission lasers selected as the light-emission targets.

Surface emission laser driving method and surface emission laser device

A method of manufacturing a laser diode array capable of inhibiting electric cross talk is provided. The method of manufacturing a laser diode array includes a processing step of forming a peel layer containing an oxidizable material and a vertical resonator structure over a first substrate sequentially from the first substrate side by crystal growth, and then selectively etching the peel layer and the vertical resonator structure to the first substrate, thereby processing into a columnar shape, a peeling step of oxidizing the peel layer from a side face, and then peeling the vertical resonator structure of columnar shape from the first substrate, and a rearrangement step of jointing a plurality of vertical resonator structures of columnar shape obtained by the peeling step to a surface of a metal layer of a second substrate formed with the metal layer on the surface.

Laser diode array, method of manufacturing the same, printer, and optical communication device

A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

Vertical cavity surface emitting laser

In a drive unit according to an embodiment of the present disclosure, in each of a plurality of current pulses, a rising crest value is the largest, and after the rising, the crest value is damped. Further, a rising crest value of a pulse of an n+1-th wave is smaller than a rising crest value of a pulse of an n-th wave. Furthermore, rising crest values of the current pulses of a second wave and waves after the second wave are determined by a mathematical function expressed as an electric potential change caused by ON-OFF of an RC time constant circuit that is single-end grounded. Moreover, in the mathematical function, a time constant at an OFF time is larger than a time constant at an ON time.

Drive unit and light-emitting device

Laser diode array, method of manufacturing same, printer, and optical communication device

A correction circuit includes a correction section configured to superpose a second current pulse on a first current pulse, and thereby correcting a waveform of the first current pulse, the first current pulse being output from a current source configured to drive a surface-emitting semiconductor laser in a pulsed manner, the correction section being configured to allow the second pulse to have a waveform obtained through attenuating a crest value of the second current pulse with time, increasing an initial crest value of the second current pulse by an amount that is larger as magnitude of the first current pulse is larger, and allowing the amount by which the initial crest value is increased to be smaller as ambient temperature of the semiconductor laser is higher, and being configured to output the second pulse having the waveform.

Correction circuit, drive circuit, light emission unit, and method of correcting current pulse waveform

A drive circuit and a drive current correcting method are described herein. The drive circuit comprises a current source that outputs a drive current, and a correction circuit that outputs a correction current. The correction circuit includes a first RC time constant circuit. An output terminal of the current source is connected to an output terminal of the correction circuit.

Correction circuit, drive circuit, light-emitting device and correction method of current pulse waveform

A semiconductor laser includes a columnar lamination structure including a first multi-layer reflection mirror, a first spacer layer, an AlGaInP (where 0&#x2266;x&#x3c;1 and 0&#x3c;y&#x3c;1) based active layer, a second spacer layer, a second multi-layer reflection mirror, and a lateral mode adjusting layer on a substrate in this order from the substrate and including a current narrowing layer. The current narrowing layer includes an unoxidized region in an in-plane central region and a circular oxidized region in the circumference of the unoxidized region. The later mode adjusting layer includes a high reflection region to correspond to the unoxidized region and a circular low reflection region in the circumference of the high reflection region. On the assumption that a diameter of the unoxidized region is Dand a diameter of the high reflection region is D, the diameters Dand Dsatisfy an expression of 0.8&#x3c;D/D&#x3c;1.5.

Semiconductor laser

A correction circuit is provided, which may reduce dullness of a light output waveform due to wavelength detuning. The correction circuit includes an RC time constant circuit. The RC time constant circuit is used to correct a waveform of a current pulse outputted from a current source, the current source driving a surface-emitting semiconductor laser in a pulsed manner, so that a pulse waveform of light output of the semiconductor laser is approximately a rectangle.

Correction circuit, drive circuit, light emitting device, and method of correcting current pulse waveform

There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.

Semiconductor light-emitting device

An optical integrated semiconductor light emitting device with improved light emitting efficiency is provided by preventing leak current from flowing through a high defect region of the substrate. The optical integrated semiconductor light emitting device includes: a substrate, in which in a low defect region made of crystal having a first average dislocation density, one or more high defect regions having a second average dislocation density higher than the first average dislocation density are included; and a Group III-V nitride semiconductor layer which is formed on the substrate, has a plurality of light emitting device structures, and has a groove in the region including the region corresponding to the high defect region (high defect region).

Optical integrated semiconductor light emitting device

The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.

Semiconductor light emitting device

A manufacturing method of a surface-emitting semiconductor laser includes the steps of: forming a stacked structure having a lower-multilayer film reflector including a lower oxidizable layer having at least one layer, an active layer having a light emitting region, an upper-multilayer film reflector including an upper oxidizable layer and an upper layer on a substrate in this order; providing a first groove in the upper layer; and providing a second groove including a portion overlapping the first groove in a planar shape and a portion not overlapping the first groove in the stacked structure.

Growing community of inventors

Kanagawa, Japan

Osamu Maeda