Toppan Printing Co., Ltd.

Ricoh Company, Ltd.

Konica Minolta, Inc.

Osamu Kina

Manabu Ito

Mamoru Ishizaki

Ryohei Matsubara

Masato Kon

Shinichi Nishi

Hitoshi Kondoh

A printing production line system for an electronic device includes a transport chamber with a robot transport line in which a self-traveling robot transports a base material in a sheet-fed manner in a free state, a plurality of processing chambers for forming an electronic device on the base material by printing on at least one side of the transport chamber, and base material transfer areas that performs loading of the base material to the processing chambers from the self-traveling robot and unloading of the base material to the self-traveling robot from the processing chambers. The transport chamber and the base material transfer area communicate with each other through respective openings, and a one-way air flow in each of the openings is formed by making an adjustment such that air pressure in the transport chamber is higher than air pressure in the base material transfer areas.

Production system for printing electronic devices

One embodiment of the present invention is a thin film transistor having a gate electrode formed on an insulating substrate, a gate wire connected to the gate electrode, a capacitor electrode, a capacitor wire connected to the capacitor electrode, a gate insulator formed on the gate electrode, an oxide semiconductor pattern formed on the gate insulator, a sealing layer formed on the oxide semiconductor pattern, a drain electrode and a source electrode formed on the sealing layer, a drain wire connected to the drain electrode and a pixel electrode connected to the source electrode, the drain wire and the pixel electrode being in the same layer as the drain electrode and the source electrode. Wherein the gate wire, the capacitor electrode and the capacitor wire are in the same layer as the gate electrode, and wherein the sealing layer does not cover a connection part of the source electrode and a connection part of the drain electrode and wherein the drain electrode and the source electrode are connected to the oxide semiconductor pattern via the connection part of the drain electrode and the connection part of the source electrode.

Thin film transistor, method for manufacturing the same and display using the same

One embodiment of the present invention is a thin film transistor including a gate electrode formed on an insulating substrate, a gate insulator formed on the gate electrode, a drain electrode and a source electrode formed on the gate insulator, an oxide semiconductor pattern formed between the drain electrode and the source electrode, and a sealing layer formed on the oxide semiconductor pattern.

Growing community of inventors

Tokyo, Japan

Osamu Kina