Hitachi-kokusai Electric Inc.

Osamu Kasahara

Kazuyuki Toyoda

Kiyohiko Maeda

Yoshiro Hirose

Masanori Sakai

Tsutomu Tanaka

Nobuhito Shima

Mamoru Sueyoshi

Atsushi Sano

Naonori Akae

Takashi Ozaki

Takaaki Noda

Ryota Sasajima

Kazuyuki Okuda

Atsushi Moriya

Yosuke Ota

Katsuhiko Yamamoto

Yuichiro Takeshima

Akihiko Yoneda

Hisashi Nomura

Junichi Tanabe

Minoru Sakamoto

Provided is a method of manufacturing a semiconductor device, including: forming a silicon oxide film on a surface of a substrate holder by repeatedly performing forming a silicon-containing layer on the surface of the substrate holder and oxidizing the silicon-containing layer; forming a thin film on a substrate by using a process gas; removing deposits attached onto the substrate holder by using a fluorine-containing gas; and reforming a silicon oxide film on the surface of the substrate holder after removal of the deposits by repeatedly performing forming a silicon-containing layer on the surface of the substrate holder and oxidizing the silicon-containing layer by using an oxygen-containing gas and a hydrogen-containing gas.

Method of manufacturing semiconductor device and substrate processing apparatus

A method of manufacturing a semiconductor device including: mounting a substrate on a substrate mounting member that is disposed in a reaction container; heating the substrate at a predetermined processing temperature and supplying a first gas and a second gas to the substrate to process the substrate; stopping supply of the first gas and the second gas, and supplying an inert gas into the reaction container; and unloading the substrate to outside the reaction container.

In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiHCl or MCS) gas to a substrate disposed in a processing chamber, (b) supplying a plasma-excited hydrogen-containing gas to the substrate disposed in the processing chamber, (c) supplying a plasma-excited or heat-excited nitrogen-containing gas to the substrate disposed in the processing chamber, (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate disposed in the processing chamber, and (e) performing a cycle including the steps (a) through (d) a predetermined number of times to form a silicon nitride film on the substrate.

Method of manufacturing semiconductor device and method of processing substrate and substrate processing apparatus

A high quality interface is formed at a low oxygen-carbon density between a substrate and a thin film while preventing heat damage on the substrate and increase of thermal budget. This method includes a step of loading a wafer into a reaction furnace, a step of pretreating the wafer in the reaction furnace, a step of performing a main processing of the pretreated wafer in the reaction furnace, and a step of unloading the wafer from the reaction furnace after the main processing. Hydrogen gas is continuously supplied to the reaction furnace in the period from the end of the pretreating step to the start of the main processing and at least during vacuum-exhausting an interior of the reaction furnace.

Semiconductor device manufacturing method and substrate processing apparatus

At a time of a substrate loading step or/and at a time of a substrate unloading step, particles are effectively eliminated from a reaction chamber. Provided are a step of loading at least one waferinto a reaction chamber, a step of introducing reaction gas into the reaction chamber, and exhausting an inside of the reaction chamber, thereby processing the wafer, and a step of unloading the processed waferfrom the reaction chamber. In the step of loading the waferor/and in the step of unloading the wafer, the inside of the reaction chamberis exhausted at a larger exhaust flow rate than an exhaust flow rate in the step of processing the wafer

Manufacturing method of semiconductor device, and substrate processing apparatus

An apparatus for use in manufacturing a semiconductor device allows one or more substrates treated substantially free of the metal particles released from the chamber wall and the high energy particles emitted from the plasma and also allows them to uniformly heated to a relatively high temperature. The apparatus comprises a reaction chamber wherein one or more substrates to be treated are disposed, a plasma source arranged outside of and in proximity to the reaction chamber, an active species supply port for providing active species generated by the plasma source to the reaction chamber and arranged at a side of the reaction chamber and an exhaust port provided at the opposite side to the active species supply port. The active species flows parallel to the surfaces of the substrates.

Apparatus and method for use in manufacturing a semiconductor device

Growing community of inventors

Toyama, Japan

Osamu Kasahara