Murata Manufacturing Co., Ltd.

Murata Mfg. Co., Ltd.

Osamu Kano

Atsuo Senda

Yoshihiko Takano

Toshiharu Hirota

Yasuo Fujiki

Yoshiharu Kato

A chip coil includes an insulating substrate on which a spiral coil conductor and first and second terminal electrodes are formed. The coil conductor and the terminal electrodes are made by forming a conductive film on the whole of both main surfaces of the insulating substrate and then etching the same. A first insulation film made of polyimide or polyamide is formed on the insulating substrate so as to cover the coil conductor and the terminal electrodes. The first insulation film is etched such that portions corresponding to the terminal electrodes are removed and a throughhole is formed at a portion corresponding in position to the inner most end of the coil conductor. A further conductive film is formed on the first insulation film and etched so as to form a connecting conductor, the ends of which are respectively connected to the inner most end of the coil conductor and the second terminal electrode through the throughhole. In addition, a second insulation film is formed on the insulating substrate and succeedingly etched, whereby the first and second terminal electrodes are exposed.

Chip coil and manufacturing method thereof

A process of forming an LC composite part. The process includes the steps of: forming a substrate having a capacitor section by laminating ceramic sheets having a plurality of capacitor electrodes formed thereon such that the ceramic sheets and electrode layers alternate, sintering the substrate, forming a plurality of coil sections on the sintered substrate, cutting the substrate into composite parts, and electrically connecting the capacitor electrode layers with the coil section.

Method of producing an LC composite part and an LC network part

A chip coil includes an insulating substrate on which a spiral coil conductor and first and second terminal electrodes are formed. The coil conductor and the terminal electrodes are made by forming a conductive film on the whole of both main surfaces of the insulating substrate and then etching the same. A first insulation film made of polyimide or polyamide is formed on the insulating substrate so as to cover the coil conductor and the terminal electrodes. The first insulation film is etched such that portions corresponding to the terminal electrodes are removed and a throughhole is formed at a portion corresponding in position to the innermost end of the coil conductor. A further conductive film is formed on the first insulation film and etched so as to form a connecting conductor, the ends of which are respectively connected to the innermost end of the coil conductor and the second terminal electrode, through the throughhole. In addition, a second insulation film is formed on the insulating substrate and subsequently etched, whereby the first and second terminal electrodes are exposed.

Chip coil manufacturing method

A method of plating treatment for forming a plated coating on the surface of a workpiece except on a region thereof comprises the steps of placing a masking member made of water swelling rubber in abutment against or in close proximity to the region of the workpiece where no plating is desired, immersing, in this state, the masking member in water to cause the water swelling rubber to undergo volumetric self-swelling, and immersing the workpiece in a plating solution with the swelled masking member pressed against the particular region of the workpiece.

Method of plating treatment

A method of metallizing a ceramic material by forming a metal thin film through electroless plating, chemically etching the metal thin film after heat treatment and metallizing the surface of the ceramic material through electroless plating after the etching.

Method of metallizing ceramic material

A ceramic dielectric composition for temperature compensating capacitors comprising 64-70.5% by weight of SrTiO.sub.3, 28-34% by weight of CaTiO.sub.3 and 1.5-4.5% by weight of Bi.sub.2 O.sub.3 or Bi.sub.2 O.sub.3.nTiO.sub.2 (where n=1 to 5). Not more than 10% by weight of MgTiO.sub.3 may be added, as necessary. The composition has high dielectric constant above 235 and Q above 2000 and low temperature coefficient of a dielectric constant up to -1000.times.10.sup.-6 /.degree.C. The ceramic element obtained by the composition has a large adhesion strength to electroless plating electrodes (nickel or copper).

Growing community of inventors

Nagaokakyo, Japan

Osamu Kano