Canon Kabushiki Kaisha

Osamu Kamiya

Yasutomo Fujiyama

Nobuyuki Sekimura

Masao Sugata

Kenji Ando

Hiroyuki Sugata

Kuniji Osabe

Keijiro Nishida

Masahiro Haruta

Tohru Den

Kyosuke Ogawa

Yuji Chiba

Noriko Kurihara

Toshiaki Kimura

Susumu Itoh

Mitsuharu Sawamura

Takashi Hamamoto

Masao Ueki

Tatsuo Masaki, Deceased

Takashi Kurokawa

Tatsuo Masaki

Mitsuo Kakei

Vacuum valve and a vacuum treating apparatus in which said vacuum valve

A device for treating fine particles is provided which comprises a plural number of reaction chambers for providing reaction fields different from each other provided along the flow pathway on the downstream side of a nozzle which jets out fine particles in a beam. The device may be provided with a chamber for a starting material for forming fine particles. The nozzle may be a convergent-divergent nozzle.

Device and process for treating fine particles

In a photographing apparatus such as a single lens reflex camera, metering photoelectric conversion elements are provided in the optical path of an imaging optical system or a finder optical system and the line width of the pattern forming the elements is set to a width undiscernable by the human eye. Thus, with such metering photoelectric conversion elements, no irregularity of the quantity of amount is caused in the image observed through the finder or the image photographed.

Photographing apparatus

A device for blowing fine particles is provided which comprises a plural number of upstream chambers for jetting out fine particles provided against a movable substrate. Each of the upstream chambers may be provided with a gas exciter, and also may be provided with an energy imparter for imparting energy to the substrate.

Plurality of beam producing means disposed in different longitudinal and

An apparatus for controlling a flow of fine particles is provided which comprises a convergent-divergent nozzle in a flow path of the fine particles. The nozzle may be operated under an optimum expansion condition, and the differential coefficient of the streamline at the channel inside the nozzle varies continuously and is equal to zero at a throat portion of the nozzle.

Apparatus and process for producing a stable beam of fine particles

An apparatus for Plasma CVD process comprises a vacuum chamber in which a plural number of substrates being placed along a circle and separately from each other, and means for passing a starting gas or an evacuating gas through gaps between the adjacent substrates.

Apparatus for plasma CVD

A reaction apparatus is provided which comprises a flow control system provided with a convergent-divergent nozzle. This nozzle is operated under the optimum expansion condition, and the differential coefficient of the streamline of the channel inside the nozzle varies continuously and reaches zero at a throat of the nozzle.

Reaction apparatus which introduces one reacting substance within a

An apparatus and a process for mass production of films by vacuum deposition comprise a substrate charging stage which is evacuated, an interconnecting stage which is positioned adjacent to said substrate charging stage and is evacuated, and a film forming stage which is removably attached to the interconnecting stage and is evacuated independently of the interconnecting stage.

Apparatus and process for mass production of film by vacuum deposition

A vacuum processing apparatus for applying a vacuum working process to a substrate to be processed by a plurality of processing steps comprises vacuum containers exclusively for use for processing disposed in place for each of the processing steps, and a vacuum container exclusively for use for conveyance movable between the vacuum containers exclusively for use for processing. The vacuum containers are provided with opening-closing gates which can be connected to each other. The substrate to be processed is transferably movable between the vacuum containers exclusively for use for processing and the vacuum container exclusively for use for conveyance.

Vacuum processing apparatus

A photochemical vapor deposition apparatus which includes a reaction chamber, a means for introducing a starting gas for film formation into the reaction chamber and a means for irradiating the starting gas with a light of high energy and deposites a thin film on a substrate placed in the reaction chamber by utilizing the photochemical reaction, characterized in that the apparatus includes a means for heating in advance to high temperature the starting gas to be introduced into the reaction chamber.

Photochemical vapor deposition apparatus

A photochemical vapor deposition method comprises introducing a starting gas into a reaction chamber, irradiating the starting gas with a light energy, and forming a deposition film on a substrate by utilizing a photochemical reaction, characterized in that the plural starting gases are introduced into the reaction chamber and the film is formed on said substrate by causing chemical reactions by irradiating molecules of these starting gases with individual light energy having a wavelength region corresponding to an absorption spectrum of each of said starting gas. A photochemical vapor deposition method comprises introducing a starting gas into a reaction chamber, irradiating the starting gas with a light energy, and forming a deposition film on a substrate by utilizing a photochemical reaction, characterized in that the starting gas is introduced into the reaction chamber and the deposition film is formed on the substrate by causing a chemical reaction by irradiating with light energy having a wavelength region corresponding to an absorption spectrum of said starting gas and irradiating with light energy having gas and irradiating with light energy having a wavelength region corresponding to an absorption spectrum of chemical substance produced from said starting gas.

Photochemical vapor deposition method

A method of cleaning an apparatus for forming deposited film on a substrate to remove the substances attached to the inside walls of a reaction chamber in the course of the formation of deposited film on the substrate by etching with plasma reaction comprises using a gas mixture of carbon tetrafluoride and oxygen as etchant.

Method of cleaning apparatus for forming deposited film

A treatment device utilizing plasma performs treatment by exposing a material to be treated to a plasma atmosphere formed by converting at least either one of fluorine and a fluorine compound into gas plasma, and said device comprises a structural member for forming the space for maintaining said plasma atmosphere, which is constituted of a stainless steel structure member coated on its surface exposed to said plasma atmosphere with a metal film which can difficultly form a fluoride.

Treatment device utilizing plasma

A copying machine has at least one metal surface of high reflectance provided with a dielectric multilayer film vapor deposited thereon. The dielectric film has a wavelength selectivity and serves to match the wavelength characteristics of the light source used in the copying machine to the sensitivity characteristics of the photosensitive medium used in the same copying machine. Thus, in the copying machine, the spectral sensitivity characteristics get adjusted to the optimum by the particular effect of the metal reflective surface or by a synergistic effect of two or more such reflective metal surface.

Copying machine including a dielectric covered metal reflective device

In a copying machine including a halogen lamp, a CdS photosensitive medium and a transmitting type projection lens system, a 5-layer or 7-layer multi-layered interference film comprising a dielectric material is applied to a surface of the transmitting type projection lens system so that a spectral distribution comprising the spectral wavelength characteristic of the original light, the spectral transmission characteristic of the multi-layered interference film and the spectral sensitivity characteristic of the photosensitive medium superposed one upon another becomes a uniform distribution.

Growing community of inventors

Machida, Japan

Osamu Kamiya