Shin-etsu Handotai Co., Ltd.

Osamu Ishikawa

Taishi Wakabayashi

Norihiro Kobayashi

Kazuhiko Yoshida

Masahiro Kato

Kenji Meguro

Miho Niitani

Hiroyuki Oonishi

Toshikazu Imai

A method for manufacturing a bonded SOI wafer, the method using a silicon single crystal wafer having a resistivity of 100 &#x3a9;&#xb7;cm or more as the base wafer, and including steps of: forming an underlying insulator film on a bonding surface side of the base wafer; depositing a polycrystalline silicon layer on a surface of the underlying insulator film; polishing a surface of the polycrystalline silicon layer; modifying the polycrystalline silicon layer by performing ion implantation on the polished polycrystalline silicon layer to form a modified silicon layer; forming the insulator film on a bonding surface of the bond wafer; bonding the bond wafer and a surface of the modified silicon layer of the base wafer with the insulator film interposed therebetween; and thinning the bonded bond wafer to form an SOI layer. This provides a bonded SOI wafer excellent in harmonic wave characteristics.

Method for manufacturing bonded SOI wafer and bonded SOI wafer

A method for manufacturing a bonded SOI wafer, including depositing a polycrystalline silicon layer on a base wafer, forming an insulator film on a bond wafer, bonding the bond wafer and a polished surface of the silicon layer with the insulator film interposed, and thinning the bond wafer, wherein a silicon single crystal wafer having a resistivity of 100 &#x3a9;&#xb7;cm or more is the base wafer, the step of depositing the silicon layer includes a stage of forming an oxide film on the surface of the base wafer, and the silicon layer is deposited between 1050&#xb0; C. and 1200&#xb0; C. Accordingly, the method enables a polycrystalline silicon layer to be deposited while preventing the progress of single crystallization even through a heat treatment step in the SOI wafer manufacturing process or a heat treatment step in the device manufacturing process and can improve throughput in the polycrystalline silicon layer depositing step.

Method for manufacturing bonded SOI wafer

A bonded semiconductor wafer provided with a single crystal silicon layer on a main surface, wherein the bonded semiconductor wafer has a base wafer composed of a silicon single crystal, and the bonded semiconductor wafer has a first dielectric layer, a polycrystalline silicon layer, a second dielectric layer, and the single crystal silicon layer above the base wafer in this order, with a bonding plane lying between the polycrystalline silicon layer and the second dielectric layer; and wherein a carrier trap layer is formed between the base wafer and the dielectric layer. This provides a bonded semiconductor wafer of a trap-rich type SOI substrate wherein the base wafer can be prevented from lowering the specific resistance due to impurities and influence of electric charge in the BOX oxide film, distortion of radio-frequency fundamental signals and crosstalk signals from one circuit to another circuit are decreased, and the mass-productivity is excellent.

Bonded semiconductor wafer and method for manufacturing bonded semiconductor wafer

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Takasaki, Japan

Osamu Ishikawa