Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Osamu Ishikawa

Masaaki Nishijima

Taketo Kunihisa

Masahiro Maeda

Shinji Yamamoto

Takahiro Yokoyama

Hiroyasu Takehara

Yorito Ota

Junji Ito

Junji Itoh

Shutaro Nambu

Kaoru Muramatsu

Toshio Fujiwara

Tatsuya Morishita

Maeda Masahiro

Chinatsu Azuma

Chinatsu Adachi

A semiconductor device of the present invention includes: a plurality of semiconductor chips each having a chip size package structure; and a substrate bonded via an adhesive material to an opposite surface in each of the plurality of semiconductor chips that is opposite to a connection surface that is provided with solder balls (external connection terminals). Thereby, the plurality of semiconductor chips are connected to each other.

Semiconductor device, method for manufacturing semiconductor device, and electric equipment system

A power amplifier including: a first amplifier PA having an input terminal and an output terminal; a passive circuit PC having an input terminal and an output terminal; and a first switch SW having a single-pole terminal and two multi-throw terminals, one of the multi-throw terminals of the first switch SW being connected to the input terminal of the first amplifier PA and the other of the multi-throw terminals of the first switch SW being connected to the input terminal of the passive circuit PC This makes it possible to provide a power amplifier and a communication unit which can be operated with different frequencies, output powers or modulation types.

Power amplifier and communication unit

A power amplifier including: a first amplifier PA,having an input terminal and an output terminal; a passive circuit PC,having an input terminal and an output terminal; and a first switch SW,having a single-pole terminal and two multi-throw terminals, one of the multi-throw terminals of the first switch SW,being connected to the input terminal of the first amplifier PA,and the other of the multi-throw terminals of the first switch SW,being connected to the input terminal of the passive circuit PC,. This makes it possible to provide a power amplifier and a communication unit which can be operated with different frequencies, output powers or modulation types.

The radio frequency module of the present invention includes an insulating substrate having a first metal film on a first principal surface thereof and a second metal film on a second principal surface thereof opposed to the first principal surface and a semiconductor device. The semiconductor device is thermally and electrically coupled to the second metal film, and a thickness of the second metal film is larger than that of the first metal film.

Radio frequency module with thermally and electrically coupled metal film on insulating substrate

Radio frequency module and method for fabricating the radio frequency

Multi mode power amplifier and communication unit

An RF-driven semiconductor chip is die-bonded to the top face of a metal plate. The semiconductor chip and the metal plate are molded together with outer leads in a plastic package in the form of a rectangular parallelepiped. The metal plate is exposed at the back face of the plastic package. The metal plate is not protruding from the front and rear side faces of the plastic package. The front and rear side faces of the metal plate are flush with the front and rear side faces of the plastic package and partially exposed at the front and rear side faces of the plastic package. The front and rear portions of the plastic package are centrally formed with respective cutaway portions each in the form of a rectangular parallelepiped. The top face of the metal plate is exposed in the cutaway portions formed centrally in the front and rear portions of the plastic package to form solder portions.

RF-driven semiconductor device

A high-frequency power amplifier comprises a transistor for high-frequency power which operates and whose current-voltage characteristics greatly change when positive voltage is supplied on its input terminal, an input bias circuit, an output bias circuit, an input impedance matching circuit, an output impedance matching circuit, and a positive voltage generation circuit. The positive voltage generation circuit comprises a detection circuit which detects part of the high-frequency power which is entered to or outputted from the transistor for high-frequency power, a rectification circuit which rectifies the part of the high-frequency power outputted from the detection circuit and outputs pulsating positive voltage, and a smoothing circuit which smoothes the pulsating positive voltage outputted from the rectification circuit and outputs positive voltage. The positive voltage generation circuit outputs positive voltage which increases or decreases in accordance with an increase or decrease in the detected part of the high-frequency power to the input terminal of the input bias circuit, without intervention of a direct-current power supply.

High-frequency power amplifier

The radio frequency probe for measuring radio frequency characteristics of a semiconductor device includes: an insulating substrate having a front surface, a back surface, and a side bottom face; a microstrip transmission line including a signal line made of conductive material formed on the front surface of the insulating substrate and a grounding electrode made of conductive material formed on the substantially entire portion of the back surface of the insulating substrate; and a signal needle and a grounding needle electrically connected to the signal line and the grounding electrode, respectively, the signal needle and the grounding needle being close to each other and being disposed so that the distances from the side bottom face to the top ends of the needles are substantially equal to each other so as to allow the signal needle and the grounding needle to contact a signal electrode pad and a grounding electrode pad of the semiconductor device simultaneously. A probe card having the radio frequency probe is also provided.

Radio frequency probe and probe card including a signal needle and

In an RF power amplifier, an input-side RF terminal is connected to a gate of an FET via an input-side matching line. A source of the FET is grounded. A drain of the FET is connected to an output-side RF terminal via an output-side matching line. To a line connected to the drain of the FET, a circuit for controlling an output impedance for the secondary harmonic wave is connected, including a first line and a first capacitor. To a line connected to the gate of the FET, a circuit for controlling an input impedance for the secondary harmonic wave is connected, including a second line and a second capacitor. The length of the second line is set so that an electric length thereof becomes longer than one-fourth of the wavelength for the fundamental wave frequency. Thus, an impedance for the harmonic wave is controlled at the input side of the power transistor.

Radio-frequency power amplifier with input impedance matching circuit

A semiconductor device includes a first chip and a second chip. Active elements such as transistors are fabricated on the surface of the semiconductor substrate of the first chip. Passive elements such as inductors and capacitors are fabricated on the second chip. The first chip is so disposed on the second chip that the reverse surface of the first chip makes a contact onto the surface of the second chip. The active element and the passive element are electrically connected by bonding wire.

Semiconductor device including a first chip having an active element and

A high frequency semiconductor device comprising metal electrode leads formed on one surface of a flexible film, a plurality of bumps formed on selected portions of the electrode patterns, a recessed portion formed on the flexible film within a region bounded by the plurality of bumps and a plurality of electrode pads of a high frequency semiconductor element respectively bonded to the bumps in alignment with each other.

High frequency semiconductor device

A device for measuring characteristics of a semiconductor device using a noise measurement system and an impedance measuring system includes an input probe and an output probe for providing connection to the semiconductor device. The device also includes first and second variable impedance devices for respectively varying a source and a load impedance, and respectively connected to the input and output probing devices. First and second switching devices are respectively connected to the first and second variable impedance devices. The switching devices selectively connect the first and second variable impedance devices to the noise measurement system, and selectively connect the first and second variable impedance devices to the impedance measuring system.

Growing community of inventors

Kyoto, Japan

Osamu Ishikawa