Fujitsu Corporation

Osamu Ishibashi

Sadao Miyazaki

Rikizo Nakano

Yoshinori Mesaki

Jin Abe

Masahiro Ise

Takeo Hishinuma

Kazunori Kasuga

Yoshitsugu Goto

Masaru Itoh

Michiyo Garbe

A memory apparatus, includes: a memory including memory regions; a table storing a memory address and a number of reading times of data; a first buffer storing first data from another memory apparatus and a first memory address of the first data; a second buffer storing second data to the another memory apparatus and a second memory address of the second data; and a controller configured to store, when a first number of reading times being minimum in the table is smaller than a second number of reading times of the first data, the first data and the first memory address into the first buffer and outputs third data in a memory region of the first number and a third memory address of the third data to the another memory apparatus via the second buffer, and rewrites the third data and memory address with the first data and memory address.

Memory apparatus, memory system and memory controlling method

A memory device includes a storage unit in which a plurality of semiconductor chips each comprising a plurality of memory blocks respectively arranged in a planar direction and a plurality of redundant blocks respectively arranged in a planar direction are stacked, a detecting unit configured to detect a defect of each of the memory blocks in the storage unit; a checking unit configured to check free capacity in each of the redundant blocks in the storage unit, and a determining unit configured to determine a substitute block to be substituted for the memory block in which the defect has been detected from the redundant blocks having the free capacity.

Memory device, storage method and control device

A memory device comprises a memory block including a plurality of cells each including an erase state and a program state, respectively; and a control circuit configured to execute, in response to a program command, program operation of applying a pulse to each cell to charge an electric charge and transferring the cell from the erase state to the program state. The control circuit executes, in response to a diagnostic command, diagnostic operation of applying to a diagnostic target cell the pulse within a range that the diagnostic target cell in the erase state in a memory block including stored data is not shifted to the program state, and checking whether or not a charge speed of the diagnostic target cell is faster than or equal to a charge speed of a slowest-speed cell whose charge speed is the slowest among normal cells.

Memory device, storage apparatus and method for diagnosing slow memory cells

A semiconductor memory apparatus includes a memory block to include memory cells to hold data; a precharge control unit to control precharging the memory cells; a row decoder to output a row selection signal identifying a row address of the memory cells; an integral circuit to integrate a signal level of the row selection signal for a same row address, and to have an integral characteristic where an integral value of the signal level becomes a predetermined value when the row selection signal for the same row address is consecutively output for a predetermined number of times; and a determination unit to determine whether the integral value of the integral circuit becomes the predetermined value or greater. The precharge control unit turns off precharging the memory cells when the integral value of the integral circuit becomes the predetermined value or greater.

Semiconductor memory apparatus

A memory module includes a plurality of memory chips stacked on top of one another, each of the plurality of memory chips including a memory cell unit that is divided into a plurality of blocks, and an address scrambling circuit that processes an input address signal and that selects a block to be operated.

Memory module and semiconductor storage device

When an address indicating an access destination of a data storing unit, and a command indicating a content of a process for the address are input, block information corresponding to the input address is output from an information holding unit. Whether or not to execute the command for the address is decided on the basis of the output block information and the input command.

Semiconductor storage device and control method thereof

A semiconductor memory device is disclosed that includes an ODT circuit configured to be connected to a bus which transmits a data signal or a data strobe signal between a memory block and an input-output terminal; a first switch configured to be inserted into the bus between the memory block and the ODT circuit; a mode controller configured to switch off the first switch during a test of the memory block; and an oscillator configured to be connected to the ODT circuit, wherein a test signal is supplied to the ODT circuit from the oscillator during the test of the memory block.

Semiconductor memory device and information processing apparatus including the same

A memory error detecting apparatus for detecting an error of a subject memory, the memory error detecting apparatus includes a memory bus connected to the subject memory, a mirror memory connected to the memory bus so as to receive the same data as data to be written into and read from the subject memory, the received data being written into the mirror memory, an address acquiring portion configured to acquire an address related to the data written into the subject memory, a mirror memory controller configured to control data writing or reading to or from the mirror memory on the basis of the acquired address, a comparator configured to compare data read from the subject memory and data read from the mirror memory, and an error detector configured to detect a data error on the basis of a result of the comparison.

Memory error detecting apparatus and method

In a semiconductor storage apparatus, an internal address generation unit generates, when receiving successive first and second external addresses, from the second external address an internal address for selecting any of the memory cells connected to bit lines and word lines except the bit line and word line connected to a memory cell to be selected according to the first external address. When receiving the successive external addresses, a memory cell connected to the same bit line and word line is not continuously selected, and erroneous readout due to rewriting of a value of the memory cell in a non-selected state is suppressed.

Semiconductor storage apparatus and semiconductor integrated circuit

A computer apparatus includes a main memory, a first memory diagnosis unit that determines a faulty area in the main memory by executing a first memory diagnostic program, and a storage unit that stores a relocatable second memory diagnostic program. Moreover, the computer apparatus includes a second memory diagnosis unit, that loads the second memory diagnostic program into areas of the main memory other than the faulty area determined by the first memory diagnosis unit.

Computer apparatus

A memory control device is provided. The memory control device is configured to control access to a storage device including a plurality of storage areas. The memory control device includes a defect detecting unit configured to detect a defective area of a storage area into which data may not be stored. The memory control device also includes a storage processing unit configured to store defect information including address information of the defective area detected using the defect detecting unit into a memory area. A data writing unit is also included in the memory control device. The data writing unit is configured to write data, which has been written into the defective area, into a storage area other than the storage area comprising the defective area based on the defect information stored using the storage processing unit.

Memory controlling apparatus and method

An information processing device includes a first storage sectionthat includes a plurality of cells to store data; a second storage sectionthat holds refresh intervals and the states of implementation of refresh operations for each of a plurality of the cells; and a control section that controls the refresh operation of each of the cells on the basis of the refresh intervals and the states of implementation of refresh operations held by the second storage section. The information processing device controls the refresh operation of each of the cells at refresh intervals set for respective cells.

Information processing device including a plurality of cells to store data, storage control device that controls a storage section including a plurality of cells to store data, and storage control method of controlling a refresh operation of a storage section including a plurality of cells to store data

A memory system includes a first memory that is used as a main memory of a target device, a second memory that has an access speed lower than that of the first memory, a securing section that secures a predetermined area of the first memory as a temporary storage area of the second memory, and a memory control section that receives an instruction to write data into the second memory, temporarily stores the data into the first memory and also transfers the stored data from the first memory to the second memory.

Memory system and information processing device

A test apparatus for testing a memory device including a memory cell. The test apparatus includes a storage and a controller. The storage stores a first value. The controller executes, at a given timing, determining a second value which is a threshold limit value to read data of the memory cell correctly on the basis of an output of the memory cell, calculating a difference between the first value and the second value, outputting a deterioration information on the basis of the difference between the first value and the second value, and updating the first value stored in the storage to the second value.

Test apparatus and test method for testing a memory device

A computer system including: a memory configured to store various kinds of data; a use setting data memory means for storing use setting data indicating a use of each of a plurality of memory blocks into which the memory is divided by a certain length; a memory diagnosis means for diagnosing the memory so as to detect a bad area in each of the memory blocks; and a memory use setting means for setting the use setting data of each of the memory blocks stored in the use setting data memory means in accordance with a result of detecting the bad area in each of the memory blocks by means of the memory diagnosis means.

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Kawasaki, Japan

Osamu Ishibashi