Hitachi-high-technologies Corporation

Bridgestone Tire Company Limited

Tdk Corporation

Bridgestone Corporation

Renesas Technology Corp.

Ricoh Company, Ltd.

Shinko Electric Industries Co., Ltd.

Osamu Inoue

Hiroki Kawada

Shuji Ikeda

Norio Hasegawa

Masaaki Igarashi

Osamu Komuro

Hiroshi Gotoh

Masaru Abe

Hozumi Yonezawa

Takeshi Yoshizumi

Takahiro Kawasaki

Hiroyuki Ohta

Tomio Iwasaki

Yuichi Abe

Yoshinori Nakayama

Noriyoshi Shimizu

Hideki Sasaki

Akio Rokugawa

Satoru Yamaguchi

Mitsuji Ikeda

Takayuki Oshima

Naoshi Itabashi

Akimasa Kaizu

Kei Sakai

Atsuko Yamaguchi

Hiromi Shimazu

Kensuke Ishikawa

Yasufumi Takasugi

Shoji Hotta

Toshiro Tezuka

Takayoshi Kuwajima

Miyako Matsui

Kazuyuki Hirao

Tsunehiko Ikarashi

Jiro Yamamoto

Junichi Taguchi

Kazunori Tamazaki

Katsumi Setoguchi

Kazuhiro Kuroda

Akira Tamura

Takashi Takahama

Shigeharu Watase

Isao Miyoshi

Masahide Kohno

Tetsuhiko Sato

Takashi Tase

Yasushi Ishikawa

Koji Chiba

Mitsutsugu Kono

Fusatoshi Sakaguchi

Hisashi Goto

Mitsuji Kohno

The purpose of the present invention is to provide an overlay error measuring device which measures an overlay error with high accuracy even when a lower layer pattern is disposed under a thin film and a sufficient signal amount cannot be ensured. The present invention proposes an overlay error measuring device provided with an arithmetic processing unit for measuring a pattern formed on a sample on the basis of a signal waveform obtained by a charged particle beam device. The arithmetic processing unit finds a correlation with the signal waveform using a partial waveform obtained on the basis of partial extraction of the signal waveform, forms a correlation profile indicating the correlation, and measures an overlay error using the correlation profile.

Overlay error measuring device and computer program for causing computer to measure pattern

For scanning electron beams and measuring overlay misalignment between an upper layer pattern and a lower layer pattern with high precision, electron beams are scanned over a region including a first pattern and a second pattern of a sample, the sample having the lower layer pattern (the first pattern) and the upper layer pattern (the second pattern) formed in a step after a step of forming the first pattern. The electron beams are scanned such that scan directions and scan sequences of the electron beams become axial symmetrical or point-symmetrical in a plurality of pattern position measurement regions defined within the scan region for the electron beams, thereby reducing measurement errors resulting from the asymmetry of electric charge.

Measurement system and measurement method

Provided is a charged particle beam device which can specify a position of an initial core with high accuracy even when fine line and space patterns are formed by an SADP in plural times. The charged particle beam device includes a detector () which detects secondary charged particles discharged from a sample () when a charged particle beam is emitted to the sample having a plurality of patterns of line shape, a display unit () which displays image data of a surface of the sample on the basis of a signal of the secondary charged particles, a calculation unit () which calculates an LER value with respect to the plurality of the patterns of line shape from the image data, and a determination unit () which compares the values to determine a position of the initial core.

Charged particle beam device and inspection device

An object of the present invention is to provide an image processing apparatus that quickly and precisely measures or evaluates a distortion in a field of view and a charged particle beam apparatus. To attain the object, an image processing apparatus or the like is proposed which acquires a first image of a first area of an imaging target and a second image of a second area that is located at a different position than the first area and partially overlaps with the first area and determines the distance between a measurement point in the second image and a second part of the second image that corresponds to a particular area for a plurality of sites in the overlapping area of the first image and the second image.

Image processing device, charged particle beam device, charged particle beam device adjustment sample, and manufacturing method thereof

Image processing apparatus includes: interpolation process image acquisition means for acquiring an interpolation process image of prescribed size which includes an interpolation point of an inputted image; Fourier transform means for subjecting the interpolation process image which is acquired with the interpolation process image acquisition means to Fourier transform; phase change means for changing, a phase of each value of the transformed interpolation process image which has been subjected to Fourier transform by the Fourier transform means, such that the interpolation point migrates to a desired nearby integer coordinate position; inverse Fourier transform means for subjecting the interpolation process image whose phase has been changed by the phase change means, to inverse Fourier transform; interpolation value determination means for adopting an interpolation point, a value of a pixel at the integer coordinate position, from the transformed interpolation process image subjected to inverse Fourier transform by the inverse Fourier transform means.

Image processing apparatus, distortion-corrected map creation apparatus, and semiconductor measurement apparatus

A semiconductor package includes a semiconductor chip, a first insulating layer formed to cover the semiconductor chip, a wiring structure formed on the first insulating layer. The wiring structure has an alternately layered configuration including wiring layers electrically connected to the semiconductor chip and interlayer insulating layers each located between one of the wiring layers and another. The interlayer insulating layers include an outermost interlayer insulating layer located farthest from a surface of the first insulating layer. A groove formed in the outermost interlayer insulating layer passes through the outermost interlayer insulating layer in a thickness direction.

Semiconductor package, semiconductor package manufacturing method and semiconductor device

A standard member for automatically, stably, and highly accurately performing magnification calibration used in an electron microscope, the standard member including, on the same plane, a multilayer film cross section formed by alternately laminating materials different from each other, a plurality of first mark patterns arranged across a first silicon layer and in parallel to the multilayer film cross section, at least a pair of second mark patterns arranged across a second silicon layer thicker than the first silicon layer on the opposite side of the first mark patterns with respect to the multilayer film cross section and in parallel to the multilayer film cross section, and a silicon layer arranged on the outer side of the first mark patterns and the second mark patterns with respect to the multilayer film cross section.

Standard member for calibration and method of manufacturing the same and scanning electron microscope using the same

A printer includes a communicating unit that receives a print job being a unit of execution of a printing process of a first printing protocol and a second printing protocol. The first printing protocol contains a series of process instructions and print data that allow the printing process to be performed from an interrupted point when the printing process is resumed after being interrupted. The printer also includes a print processing unit that performs the printing process by executing the print job, and a priority processing unit that preferentially selects a print job of the first printing protocol related to the interrupted printing process when receiving a print job of the first printing protocol related to the interrupted printing process and a print job of the second printing protocol after the printing process of the print job of the first printing protocol is interrupted.

Image forming apparatus, image forming system, and image forming method

A printer includes a first receiving unit that receives a print job containing a printing requirement, where the printing requirement is set as either an indispensable requirement that is indispensable for executing the print job or a desired requirement that is desirable for executing the print job; a second receiving unit that receives, from each of external image forming apparatuses connected to the image forming apparatus via a network, a printability level indicating whether the external image forming apparatus has a printing function satisfying the indispensable requirement or a printing function satisfying the desired requirement; a selecting unit that selects an image forming apparatus that executes the print job from the external image forming apparatuses by checking the printability level; and a print-operation control unit that sends the print job to the selected image forming apparatus and causes the selected image forming apparatus to execute the print job.

Image forming apparatus and print control method, and program product

In a method of manufacturing an electronic component built-in substrate of the present invention, a mounted body including a first insulating layer, a stopper metal layer formed under the first insulating layer of a portion corresponding to a component mounting region and a second insulating layer formed on a lower surface of the first insulating layer and covering the stopper metal layer is prepared, and a concave portion is obtained by penetration-processing a portion of the first insulating layer, which corresponds to the component mounting region to form an opening portion, while using the stopper metal layer as a stopper. Also, the stopper metal layer in the concave portion is removed, then an electronic component is mounted on the concave portion, and then a third insulating layer is formed on the electronic component.

Method of manufacturing electronic component built-in substrate

A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing through the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.

Semiconductor device

On the occasion of the aligning process to transfer a predetermined pattern to a semiconductor wafer by irradiating a photoresist on the semiconductor wafer with an aligning laser beam of the modified lighting via a photomask MK, the photomask MK allocating, to provide periodicity, the main apertures to transfer the predetermined pattern as the apertures formed by removing a part of the half-tone film on the mask substrate and the auxiliary apertures not resolved on the semiconductor wafer as the apertures formed by removing a part of the half-tone film is used to improve the resolution of the pattern.

Fabrication method of semiconductor integrated circuit device

The average major-axis length (L) of a ferromagnetic alloy powder primarily contained together with a binder in a magnetic layer provided on at least one surface of a non-magnetic support is less than 0.10 &#x3bc;m, and the ferromagnetic alloy powder contains Co at a content of 15 to 28 at % relative to Fe, and furthermore, contains Y at a content of 22 &#x3bc;mol/m2 or more with respect to a specific surface area (Sc) calculated from the above-mentioned average major-axis length (L) and the crystallite diameter (d). A coating-type high-recording-density magnetic recording medium has excellent surface properties, an excellent electromagnetic transducing characteristic especially in short wavelength regions and high reliability.

Magnetic recording medium

This invention concerns a magnetic recording medium which comprises a nonmagnetic support, a magnetic layer provided on one surface of the nonmagnetic support and a backcoat layer provided on the other surface of the nonmagnetic support, wherein the nonmagnetic support is provided with such physical properties as Young's moduluses in the longitudinal direction and the lateral direction thereof in the range of 1300-1600 kg/cm.sup.2, respectively, and a breaking elongation in the range of 3-10% and said magnetic recording medium is provided on the magnetic layer side thereof with a convex cupping the magnitude of which is in the range of 0.02-0.20 mm at a width of 3.8 mm. The magnetic recording medium, therefore, realizes perfect head touch even when the thickness of the nonmagnetic support and the thickness of the whole medium are small. Even when the magnetic recording medium is exposed to the mechanical influences and physical influences of aging, it suffers extremely small change in the form (such as, for example, the cupping value) and therefore conserves the head touch and other factors in highly satisfactory state. It suffers occurrence of dropout or head stain only sparingly.

Growing community of inventors

Tokyo, Japan

Osamu Inoue