Matsushita Electric Industrial Co., Ltd.

Matsushita Electronics Corporation

Panasonic Corporation

Osamu Imafuji

Masaaki Yuri

Masahiro Ishida

Kenji Orita

Shinji Nakamura

Toru Takayama

Tadao Hashimoto

Shinichiro Nozaki

Hiroyuki Hagino

Isao Kidoguchi

Hideto Adachi

Masahiro Kume

Akio Yoshikawa

Masahiro Ogawa

Toshiya Fukuhisa

Akira Takamori

Katsuya Samonji

Keiji Ito

Masao Kawaguchi

Toshiya Kawata

Koji Makita

Hiroshi Asaka

A nitride semiconductor laser includes: a first nitride semiconductor layer; a light-emitting layer formed on the first nitride semiconductor layer and including a nitride semiconductor; a second nitride semiconductor layer formed on the light-emitting layer and having a ridge portion; an electrode component formed on the second nitride semiconductor layer, and which is wider than the ridge portion; and a dielectric layer formed on side surfaces of the ridge portion and including SiO. A space is present between the electrode component and the dielectric layer, and the electrode component is prevented from being in contact with the dielectric layer by the space, and is in contact with the upper surface of the ridge portion.

Nitride semiconductor laser and nitride semiconductor laser device

A nitride semiconductor laser element includes an electron barrier layer between a p-side light guide layer and a p-type clad layer. The electron barrier layer has a bandgap energy larger than that of the p-type clad layer. The p-side light guide layer is made of AlGaN containing no Indium, where 0&#x2264;x&#x3c;1. A film thickness dn of the n-side light guide layer and a film thickness dp of the p-side light guide layer satisfy relationships dp&#x2265;0.25 &#x3bc;m and dn&#x2265;dp.

Nitride semiconductor laser element

A semiconductor laser device of the present invention includes: a first conductivity type cladding layer; an active layer; and a second conductivity type cladding layer, which are on a substrate. The semiconductor laser device further includes a stripe structure for injecting carriers therein. A width of the stripe is wider at a front end face of a resonator from which laser light is emitted than at a rear end face that is located on an opposite side of the front end face, and a reflectance of the front end face is lower than a reflectance of the rear end face. With this configuration, the injection of carriers into an active layer can be controlled in accordance with an optical intensity distribution along the resonator direction within the semiconductor laser, thus achieving a decrease in threshold current, an enhancement of a slope efficiency and an enhancement of a kink level. As a result, the semiconductor laser device can be provided so that stable laser oscillation in the fundamental transverse mode can be realized up to the time of a high optical output operation.

Semiconductor laser

A semiconductor laser device comprises, on top of an active layer, an n-type cladding layer of AlGaAs and a p-type cladding layer of (AlGa)InP for defining a barrier height. The p-type cladding layer for defining a barrier height contains more component elements than the n-type cladding layer. The potential difference between the conduction band edges of the p-type cladding layer for defining a barrier height and the active layer is greater than the potential difference between the conduction band edges of the n-type cladding layer and the active layer. The carriers in the active layer are prevented from overflowing into the p-type cladding layer and a material having a high thermal conductivity is used for the n-type cladding layer to prevent the phenomenon of thermal saturation, thereby providing improved optical output.

Semiconductor laser device

A semiconductor laser has a first conduction-type cladding layer, an active layer, and a second conduction-type cladding layer formed on a first conduction-type semiconductor substrate. The second conduction-type cladding layer has a mesa-type stripe-shaped recessed portion in at least four spots, so as to form a central ridge portion, which constitutes a ridge-type current confinement portion, and two or more lateral ridge portions, which are positioned on both sides of the central ridge portion, have a height larger than to that of the central ridge portion, and include the second conduction-type cladding layer. An insulation film with a lower refractive index than the second conduction-type cladding layer is formed in a pair of stripes disposed respectively in the regions from the side surface of the second conduction-type cladding layer on both side surfaces of the central ridge portion toward the outside. The insulation film is not formed on the central ridge portion.

Semiconductor laser and method for manufacturing the same

Disclosed is a semiconductor device which comprises a substrate in which surface is formed a depression having a closed figure when viewed from the substrate normal and a semiconductor layer which is formed on the surface of the substrate by crystal growth from at least an inside face of the depression.

Semiconductor device, semiconductor substrate, and manufacture method

A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.

Semiconductor device and semiconductor substrate, and method of fabricating the same

A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a <1, 1, &minus;2, 0> direction.

Semiconductor light emitting device and method for producing the same

Semiconductor device and semiconductor substrate, and method for fabricating the same

A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In Ga N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.

Semiconductor substrate, semiconductor device and method of manufacturing the same

A first semiconductor layer is epitaxially grown on a semiconductor substrate and patterned to form concave and convex portions. A second semiconductor layer is formed on the first semiconductor layer using a top epitaxial mask covering the top surface of the convex portion. Lattice defects D propagating from the first semiconductor layer exist only in a region located above the center of the concave portion (a defect region Ra), while in the other region (a low defect region Rb) lattice defects D propagating from the first semiconductor layer hardly exist.

Method of manufacturing high performance semiconductor device with reduced lattice defects in the active region

A semiconductor laser diode array of this invention contains a first laser diode including a first cladding layer of a first conductivity type formed on a substrate, a first active layer formed on the first cladding layer and a second cladding layer of a second conductivity type formed on the active layer; and a second laser diode including a third cladding layer of the first conductivity type formed on the substrate with a space from the first laser diode, a second active layer formed on the third cladding layer and having a larger energy gap than the first active layer and a fourth cladding layer of the second conductivity type formed on the second active layer. The second laser diode further includes a height adjusting buffer layer of the first conductivity type formed between the substrate and the third cladding layer and having a thickness set for placing the second active layer at substantially the same height from the substrate surface as the height from the substrate surface of the first active layer.

Semiconductor laser diode array and method of fabricating the same

A semiconductor device comprises a substrate having a first thermal expansion coefficient T a strain reducing layer formed on the substrate and having a second thermal expansion coefficient T and a semiconductor layer formed on the strain reducing layer, having a third thermal expansion coefficient T and made of a nitride compound represented by Al Ga In N (0&lE;y&lE;1, 0&lE;z &lE;1). The second thermal expansion coefficient T is lower than the first thermal expansion coefficient T The third thermal expansion coefficient T is lower than the first thermal expansion coefficient T and higher than the second thermal expansion coefficient T .

Semiconductor device and method of fabricating the same

A method for growing a nitride compound semiconductor according to the present invention includes the step of growing a compound semiconductor expressed by a general formula Al Ga N (where 0&lE;&times;&lE;1) on a nitride compound semiconductor substrate at a temperature of about 900&deg; C. or more.

Growing community of inventors

Osaka, Japan

Osamu Imafuji