Canon Kabushiki Kaisha

Osamu Iketa

Mineo Shimotsusa

Keishi Saito

Eisaku Tatsumi

Yoshikazu Shibamiya

Takeo Ono

Hiraku Kozuka

Kazumi Suga

Tomoko Maruyama

Satoshi Mitsumura

Takashi Morii

Nobuo Kawase

Kenzo Ina

Kazuaki Sugai

Atsushi Sakakibara

A patterning method forms a pattern including a lyophilic region and a lyophobic region. The method includes treating the surface of an object by exposing an atmosphere containing at least one gas selected from the group consisting of hydrogen, deuterium, deuterated hydrogen, and tritium; partially exposing the treated surface to light to form an exposed region and an unexposed region; and applying a liquid onto one of the exposed region and the unexposed region.

Patterning method and methods for producing electro-optic device, color filter, illuminant, and thin-film transistor

A display apparatus of the invention which detects an obstacle put on a display unit, and modifies a place or manner of a display to be performed, comprising the display unit having a display surface; a detecting unit for detecting a display-obstructed area on the display surface where a display-obstructing factor is present; a shifting unit for shifting the area of displayed contents to a displayable area other than the display-obstructed area, when the display-obstructed area is detected; and a display control unit for displaying the displayed contents shifted by the shifting unit in the area other than the display-obstructed area.

Display apparatus and method of controlling display apparatus

A semiconductor device having a high source breakdown voltage and high performance and high reliability and a liquid jet apparatus are provided. In a semiconductor device having a switching element for flowing current through a load and a circuit for driving the switching element, respectively formed on the same substrate, the circuit has a source follower transistor for generating a drive voltage to be applied to a control electrode of the switching element, and the source region of the source follower transistor has a first doped region connected to the source electrode and a second doped region having an impurity concentration lower than that of the first doped region, the second doped region forming a pn junction with a semiconductor region forming a channel.

Semiconductor device and liquid jet apparatus using the same

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Kanagawa, Japan

Osamu Iketa